Abstract: The present invention relates to a silicide alloy film that is formed on a substrate containing Si, the silicide alloy film including a metal M1 having a work function of 4.6 eV or more and 5.7 eV or less, a metal M2 having a work function of 2.5 eV or less and 4.0 eV or more, and Si, the silicide alloy film having a work function of 4.3 eV or more and 4.9 eV or less. Here, the metal M1 is preferably Pt, Pd, Mo, Ir, W or Ru, and the metal M2 is preferably Hf, La, Er, Ho, Er, Eu, Pr or Sm. The silicide alloy film according to the present invention is a thin-film which has excellent heat-resistance and favorable electrical property.

Abstract: The present invention provides a method for producing a semiconductor device electrode, the method including the steps of: forming a first thin-film including a first metal on a substrate containing Si; forming a second thin-film including a compound of a second metal on the first thin-film; and performing a heat treatment to form an electrode including a silicide of the first metal, and is characterized in that hafnium (Hf) is applied as the second metal. HfN, HfW, HfB or the like is suitable as the compound of the second metal. The present invention can effectively suppress oxidation of a metal thin-film to be silicified, in formation of a silicide electrode on a silicon substrate.

Abstract: The present invention relates to a silicide alloy film that is formed on a substrate containing Si, the silicide alloy film including a metal M1 having a work function of 4.6 eV or more and 5.7 eV or less, a metal M2 having a work function of 2.5 eV or less and 4.0 eV or more, and Si, the silicide alloy film having a work function of 4.3 eV or more and 4.9 eV or less. Here, the metal M1 is preferably Pt, Pd, Mo, Ir, W or Ru, and the metal M2 is preferably Hf, La, Er, Ho, Er, Eu, Pr or Sm. The silicide alloy film according to the present invention is a thin-film which has excellent heat-resistance and favorable electrical property.

Abstract: A method of manufacturing a semiconductor device, comprises; a) forming a SiGe layer on a substrate; b) forming a Si layer on the SiGe layer; c) forming a groove that exposes the side surface of the SiGe layer by partly etching the Si layer and the SiGe layer; and d) forming a hollow portion between the substrate and, the Si layer by etching the SiGe layer via the groove. Step d) further comprises: forming a part of the hollow portion by supplying a new liquid including a fluorinated nitric acid solution to the substrate and etching the SiGe layer, removing the fluorinated nitric acid solution once from the hollow portion that is under formation; and etching the SiGe layer by refilling a new liquid including a fluorinated nitric acid solution to the hollow portion.

Abstract: A method of manufacturing a semiconductor device, comprises; a) forming a SiGe layer on a substrate; b) forming a Si layer on the SiGe layer ; c) forming a groove that exposes the side surface of the SiGe layer by partly etching the Si layer and the SiGe layer; and d) forming a hollow portion between the substrate and, the Si layer by etching the SiGe layer via the groove. Step d) further comprises: forming a part of the hollow portion by supplying a new liquid including a fluorinated nitric acid solution to the substrate and etching the SiGe layer, removing the fluorinated nitric acid solution once from the hollow portion that is under formation; and etching the SiGe layer by refilling a new liquid including a fluorinated nitric acid solution to the hollow portion.

Abstract: An opening 35 is formed on an assembly having a silicon germanium layer 32, a silicon layer 33, and a silicon oxide layer 34 sequentially formed on a silicon basis material 31. An additional silicon oxide layer 36 is formed so as to cover the silicon oxide layer 34 and an inner surface of the opening 35. Then, the silicon germanium layer 32 is removed by etching, and a thermal oxidation treatment and an annealing treatment are sequentially performed on the silicon basis material 31 and the silicon layer 33 to form thermal oxidation layers 37 and 38. Then, a flat film 39 is formed for flat treatment to manufacture a semiconductor substrate 10 having an island part 12 made of silicon buried in an component 13 made of silicon oxide.