Abstract: The present disclosure provides an inorganic/organic hybrid complementary semiconductor device that can be manufactured at a lower cost, has excellent long-term stability, has a well-balanced operation between the p-type transistor and the n-type transistor, and operates at a high speed.

Abstract: The present disclosure provides a sealing material suitable for a compound having a non-stoichiometric composi263tion. The present disclosure is related to a sealing material for a compound having a non-stoichiometric composition, the sealing material including a polymer layer and an inorganic oxide insulator layer, wherein the polymer layer includes a first polymer layer containing an organic solvent soluble polymer.

Abstract: The electrically conductive adhesive agent composition comprises a metal particle (Q) and a prescribed organophosphorus compound (A), and the metal particle (Q) comprises a first metal particle (Q1) made of a single metal selected from the group of copper, nickel, aluminum and tin or an alloy comprising two or more metals selected from said group.

Abstract: A method for manufacturing an enameled wire includes providing a conductor with an enamel coating thereon, and exposing the conductor to a light with a wavelength absorbable by a solvent included in the enamel coating to evaporate the solvent. The light includes a peak wavelength of less than 4 ?m.

Abstract: The electrically conductive adhesive agent composition comprises a metal particle (Q) and a prescribed organophosphorus compound (A), and the metal particle (Q) comprises a first metal particle (Q1) made of a single metal selected from the group of copper, nickel, aluminum and tin or an alloy comprising two or more metals selected from said group.

Abstract: A method for manufacturing an enameled wire includes providing a conductor with an enamel coating thereon, and exposing the conductor to a light with a wavelength absorbable by a solvent included in the enamel coating to evaporate the solvent. The light includes a peak wavelength of less than 4 ?m.

Abstract: A pattern correction apparatus for performing both of optical proximity effect correction and process proximity effect correction with regard to a design pattern includes: a correction calculation means configured to perform correction calculation by two-dimensional model-based optical proximity effect correction for each of sampling points set on pattern edges which form the design pattern; the correction calculation means performing the correction calculation which involves weighting with a two-dimensional distribution of the pattern edges around the sampling point taken into consideration; the weighting being performed such that a high weight is applied to a region in which reaction products which can have an influence on the sampling point are produced but a low weight is applied to any other region.

Abstract: A pattern correction apparatus for performing both of optical proximity effect correction and process proximity effect correction with regard to a design pattern includes: a correction calculation means configured to perform correction calculation by two-dimensional model-based optical proximity effect correction for each of sampling points set on pattern edges which form the design pattern; the correction calculation means performing the correction calculation which involves weighting with a two-dimensional distribution of the pattern edges around the sampling point taken into consideration; the weighting being performed such that a high weight is applied to a region in which reaction products which can have an influence on the sampling point are produced but a low weight is applied to any other region.

Abstract: A miniature contact is incorporated in a semiconductor device for transferring an electric signal between a conductive wiring and an impurity region, and a titanium silicide and a single crystal silicon region doped with an impurity forms an ohmic contact; in order to form the ohmic contact, a surface portion of the single crystal silicon region is made amorphous by using an ion-bombardment, thereafter, titanium is deposited on the amorphous silicon to have the thickness ranging between 3 nanometers and 10 nanometers, and the titanium layer is converted to a titanium silicide layer through an annealing at 400 degrees to 500 degrees in centigrade, thereby forming the low-resistive ohmic contact without changing the impurity profile of the single crystal silicon region.