Abstract: A fine particle of metal is disposed on a semiconductor substrate. With the exception of a position of disposition of the fine particle of metal, a covering layer is formed on a surface of the semiconductor substrate. Thereafter, heat treatment is implemented at a temperature higher than that where constituent atoms of the semiconductor substrate and constituent atoms of the fine particle of metal dissolve at an interface thereof due to interdiffusion in a vacuum atmosphere. Thus, a fine projection structure that comprises a semiconductor substrate and a fine projection consisting of a solid solution of the semiconductor substrate and the metal is obtained. The fine projection is formed with part thereof precipitating in the semiconductor substrate. The fine projection structure as this largely contributes in realizing high integration semiconductor devices and quantum size devices.

Abstract: On a semiconductor layer 1 consisting of a substrate of a semiconductor single crystal or the like, a metallic layer 2 of a thickness of 20 nm or less is formed. The metallic layer 2 comprises a first area A directly contacting with the semiconductor layer 1, and a second area B that is interposed by an intermediate layer 3 consisting of an insulator, a metal different from the metallic layer 2 or a semiconductor different from the semiconductor layer 1 between the semiconductor 1 and the metallic layer 2, and of a thickness of 10 nm or less. The first area and the second area are different in their Schottky currents, further in their Schottky barrier heights. Any one of the respective areas A and B has an area of nanometer level, and the respective interfaces in each of the areas A and B have an essentially uniform potential barrier, respectively. Such a film-like composite structure contributes to a minute semiconductor device of nanometer level and realization of a new functional device.

Abstract: A structure comprising silicon-containing ceramic body and an active metal-containing metal layer as a brazing layer or a metallization layer bonded to and disposed on the surface of the ceramic body. A reaction layer of a compound containing constituent elements of the ceramic body and the active metal is formed in the interface between the ceramic body and the metal layer. The reaction layer is present ahead the outer circular edge of the metal layer. In particular, when the ceramic body is silicon nitride with the active metal being titanium, the reaction layer comprises a first reaction layer composed mainly of titanium nitride and a second reaction layer composed mainly of titanium silicide. The first reaction layer is present ahead the outer circular edge of the second reaction layer. According to the brazed structure and the metallized structure, the characteristics of the metal layer containing the active metal, such as bonding strength, can be improved with good reproducibility.

Abstract: A particle of W oxide 2 such as a particle of WO3 is disposed on an amorphous carbon support film 1, onto the particle of W oxide 2 in an atmosphere of high vacuum an electron beam of an intensity of 1023 to 1024 e/cm2·sec being irradiated. Due to the irradiation of an electron beam 3 of such an intensity, ultra fine particles of W 4 of a particle diameter of for instance 10 nm or less are generated. The ultra fine particles of W consist of W effected to detach from the particle of W oxide.

Abstract: Ultrafine particle structure composed of a plurality of ultrafine particles disposed continuously on a substrate forming a desired shape. A plurality of the ultrafine particles consist of ultrafine particles of metal, semiconductor, compound, and the like. The ultrafine particles constituting an ultrafine particle structure are produced by disposing a target material having a slit of desired shape on a substrate and irradiating a high energy beam in a slanting direction to an inner wall surface of the target material. Constituent atoms or molecules liberated from the target material by irradiation of a high energy beam in a slanting direction are disposed continuously as a plurality of ultrafine particles on the substrate. By contacting or at least partially bonding between adjacent ultrafine particles, ultrafine particle structure is formed.

Abstract: A fullerene containing structure comprises an amorphous carbon base having a first amorphous carbon layer and a second amorphous carbon layer laminated together, and a giant fullerene formed in the neighborhood of layer interface of the amorphous carbon base straddling on both the amorphous carbon layers. A plurality of giant fullerenes generated in the neighborhood of the layer interface are connected together to form a continuum body such as a film structure (a film of giant fullerene) or the like. According to such the fullerene containing structure, a shape and a position to be formed of the giant fullerene, further a state of formation such as a connecting structure or the like can be controlled. In addition, the stable carbon base can protect the generated giant fullerene itself.

Abstract: An ultrafine Al particle consists of an Al multiply twinned particle. The Al multiply twinned particle has a decahedron structure surrounded by {111} planes. The Al multiply twinned decahedral particle has a diameter of 10 to 30 nm. Such an ultrafine Al particle consisting of the Al multiply twinned decahedral particle is obtained as follows. A metastable Al oxide particle is placed on an amorphous carbon substrate having the reduction effect. Then the electron beam is irradiated to the metastable Al oxide particle placed on the amorphous carbon substrate in the vacuum atmosphere. From the metastable Al oxide particle, Al atoms or Al clusters are emitted and adsorbed to the substrate. By adjusting the electron beam intensity so that the ultrafine Al particle in the above procedure has a diameter from 10 to 30 nm, the Al multiply twinned particle having a decahedron is obtained.

Abstract: Dispose a fine metal particle on a semiconductor substrate. By heat-treating this in a vacuum, a constituent element of the semiconductor substrate is dissolved into the fine metal particle to form a solid solution, resulting in further formation of a homogeneous liquid phase (liquid droplet) composed of semiconductor-metal. By annealing this, the constituent element of the semiconductor substrate is precipitated from the semiconductor-metal liquid droplet. Thus, a fine projection composite structure comprising a semiconductor substrate, a semiconductor fine projection epitaxially grown selectively at an arbitrary position on the semiconductor substrate, and a metal layer disposed selectively on the semiconductor fine projection, can be obtained. The metal layer can be removed as demands arise. Such a fine projection composite structure possesses applicability in, for instance, an ultra-high integration semiconductor device or a quantum size device.

Abstract: A target material having pores is disposed on a substrate. A high energy beam is irradiated to the inner walls of the pores of the target material in a slanting direction. Constituent atoms or molecules of the target material are detached from it to obtain a single or plurality of ultrafine particles separated as a unit substance. The superfine particles are formed at desired positions corresponding to the pores of the target material. Besides, by using an amorphous carbon substrate as the substrate, fullerenes such as an onion-like graphite are formed with the ultrafine particles as nucleation points. When the high energy beam is irradiated to at least two neighboring metal ultrafine particles, these metal ultrafine particles are bonded mutually. When the obtained metal ultrafine particle bonded body has a corresponding grain boundary, the high energy beam is further irradiated to lower value .SIGMA. of the corresponding grain boundary of the bonded interface.

Abstract: After an ultrafine particle is disposed on a giant fullerene by driving the ultrafine particle using an electron beam, the ultrafine particle is enclosed in a core hollow portion of the giant fullerene, by contracting the giant fullerene with the electron beam irradiation. Or a metal ultrafine particle composed of an active metal is enclosed in the core hollow portion of the giant fullerene, by irradiating a high energy beam such as the electron beam to an amorphous carbon including the active metal to form the giant fullerene in an irradiated portion, and by contracting the giant fullerene with the irradiation of the high energy beam.

Abstract: An onion-like graphite 2 is produced by irradiating an electron beam to an amorphous carbon 3 under an active aluminum nanoparticle 1. By further irradiating the electron beam to the onion-like graphite 2 to intercalate aluminum atoms constituting the aluminum nanoparticle 1 in a space between (001) plane and (002) plane of the onion-like graphite 2 having a layer structure, an intercalation compound 4 is produced. Or, after the aluminum nanoparticles were driven and disposed on the onion-like graphite by electron beam, or the like, by irradiating the electron beam to intercalate aluminum atoms in the space between the (001) plane and the (002) plane of the onion-like graphite having a layer structure, the intercalation compound is produced.

Abstract: After an ultrafine particle is disposed on a giant fullerene by driving the ultrafine particle 1 using an electron beam, the ultrafine particle is enclosed in a core hollow portion of the giant fullerene, by contracting the giant fullerene with the electron beam irradiation. Or a metal ultrafine particle composed of an active metal is enclosed in the core hollow portion of the giant fullerene, by irradiating a high energy beam such as the electron beam to an amorphous carbon under existing of the active metal to form the giant fullerene in an irradiated portion, and by contracting the giant fullerene with the irradiation of the high energy beam such as the electron beam.

Abstract: An electron beam of more than 1.times.10.sup.19 e/cm.sup.2 .multidot.sec is irradiated to metastable metal oxide particles such as .theta.-Al.sub.2 O.sub.3 particles or the like disposed on an amorphous carbon film. A phase transformation or the like of the metastable metal oxide particles is occurred by the electron beam irradiation. Thus, stable metal oxide ultrafine particles such as an .alpha.-Al.sub.2 O.sub.3 ultrafine particle 2 whose diameter is more tiny than the metastable metal oxide particles used, and a metal ultrafine particle composed of an oxide such as Al ultrafine particles are produced.

Abstract: An onion-like graphite 2 is produced by irradiating an electron beam to an amorphous carbon 3 under an active aluminum nanoparticle 1. By further irradiating the electron beam to the onion-like graphite 2 to intercalate aluminum atoms constituting the aluminum nanoparticle 1 in a space between (001) plane and (002) plane of the onion-like graphite 2 having a layer structure, an intercalation compound 4 is produced. Or, after the aluminum nanoparticles were driven and disposed on the onion-like graphite by electron beam, or the like, by irradiating the electron beam to intercalate aluminum atoms in the space between the (001) plane and the (002) plane of the onion-like graphite having a layer structure, the intercalation compound is produced.

Abstract: A fullerene composite comprises a matrix formed of ultrafine fullerene such as, for example, C.sub.60 crystallite having diameters in the range of from 5 to 50 nm and a reinforcing member formed of a mixture consisting of carbon nanotubes, carbon nanocapsules, and inevitable indeterminate carbonaceous impurities and incorporated in the matrix. The amount of the reinforcing member incorporated in the matrix is in the range of from 15 to 45% by weight based on the amount of the matrix. Owing to the use of the reinforcing member which contains carbon nanotubes and carbon nanocapsules, the produced fullerene composite is enabled to acquire improved mechanical strength and resistance to deformation, and the wide applicabilities are endowed with fullerene composites.

Abstract: A wear-resistant member formed comprises a sintered ceramic body essentially consisting of 0.1 to 15% by weight of at least one material selected from the group comprising molybdenum carbide, niobium carbide, hafnium carbide, tantalum carbide, tungsten carbide, molybdenum silicide, niobium silicide, hafnium silicide, tantalum silicide, tungsten silicide, molybdenum boride, niobium boride, hafnium boride, tantalum boride, and tungsten boride, 2 to 20% by weight of a boundary phase selected from the group consisting of Si--Y--Al--O--N and Si--Y--Al--O--N--B, and a balance of .beta.-silicon nitride. The wear-resistant member preferably has a metal member bonded to the sintered ceramic body. The wear-resistant member can perform high-load work such as high-speed cutting.

Abstract: Disclosed is a ceramics bonded product, which comprises a ceramics sintered body bonded to another ceramics sintered body or a metal member through a ductile metal and a group IVa transition metal nitride interposed therebetween. Also disclosed is a method of producing a ceramics bonded product, which comprises bonding a ceramics sintered body and another ceramics sintered body or a metal member by allowing a ductile metal and a group IVa transition metal nitride to exist therebetween.

Abstract: For higher thermal conductivity, stronger adhesion strength, excellent insulating characteristics, and multilayer interconnection, an aluminium sintered body for circuit substrates comprises a novel conductive metallized layer on the surface of the sintered body. The metallized layer comprises at least one element selected from the first group of Mo, W and Ta and at least one element selected from the second group of IIa, III, IVa group elements, lanthanide elements, and actinide elements in the periodic table, as the conductive phase element. The first group element serves to improve the heat conductivity and resistance, while the second group serves to increase the wetness and adhesion strength between the insulating body and the metallized layer. Further, the plural insulating ceramic bodies and the plural metallized conductive layers can be sintered simultaneously being stacked one above the other to permit a multilayer interconnection.

Abstract: A method of manufacturing a sintered ceramic body which has a conductive layer and which is suitable for bonding with a metal member, has the steps of coating at least part of a surface of an unsintered ceramic powder compact with a coating material which has a melting point or decomposition point higher than a sintering temperature of the compact and which is selected from the group consisting of a metal, a metal salt, a conductive inorganic material and a nonconductive inorganic material which becomes conductive after sintering, and sintering a resultant structure, thus forming the sintered ceramic body having a conductive layer on at least part of the surface thereof.

Abstract: A non-oxide-series-sintered ceramic body, which has a conductive film on its surface and which permits a strong bond to a metal member, the conductive film comprising a metal silicide selected from the group consisting of molybdenum silicide and tungsten silicide.