Abstract: [Problem] Providing a thick film resist composition capable of reducing environmental impact. [Means for Solution] A thick film resist composition comprising polymer (A), a deprotecting agent (B), a photoreaction quencher (C) composed of a certain cation and an anion, and a solvent (D).

Abstract: [Problem to be Solved] To provide a bottom antireflective coating forming composition which can show high etching resistance and can be crosslinked even at a relatively low temperature. Further, to provide a resist pattern manufacturing method and a device manufacturing method using the same. [Solution] The bottom antireflective coating forming composition comprises: a polymer A comprising specific repeating units; a low molecular crosslinking agent having a molecular weight of 100 to 3,000; and a solvent. The resist pattern manufacturing method and the device manufacturing method using the same are also provided.

Abstract: [Problem] To provide a chemically amplified positive type photoresist composition capable of forming a pattern having an excellent cross-sectional shape, and a pattern forming method using the same. [Means for Solution] A chemically amplified positive type photoresist composition comprising (A) a polymer which reacts with an acid to increase its solubility in an alkaline aqueous solution, (B) an organic solvent, (C) a first photo acid generator containing a cation having no polar group, and (D) a second photoacid generator containing a cation having a polar group, and a pattern forming method using the same.

Abstract: The present invention relates to a photoresist composition comprising a polymer(s), a photo acid generator(s), a (C) compound(s) comprising unit EO and unit PO, and a solvent(s). And the present invention relates to a method for manufacturing a photoresist coating, etched photoresist coating, and etched Si containing layer(s). And the present invention relates to a method for a manufacturing a device.

Abstract: The present invention relates to a photosensitive resin composition suitable for forming a thick film, which comprises (A) an alkali-soluble resin, (B) at least one plasticizer selected from a group consisting of an alkali-soluble vinyl resin and an acid-dissociable group containing vinyl resin, (C) an acid generator, and (D) an organic solvent.

Abstract: [Problem] To provide a composition for forming a coating layer having excellent gas barrier performance and a method of forming the coating layer. [Means for Solution] A composition for forming a coating film comprising a specific silicon compound which reacts with a polysilazane by exposure, a polysilazane and an organic solvent, and a method for forming a coating layer comprising coating the composition on a substrate and exposing.

Abstract: [Problem] To provide a film forming composition and a method for preparing a film with which it is possible to form a film having excellent gas barrier performance. [Means for Solution] Disclosed is a film forming composition comprising: a polysiloxane that does not include a hydroxyl group or a carboxyl group; a polysilazane; and an organic solvent. Also disclosed is a method for preparing a film comprising: coating a substrate with said composition; and exposing the same to light.

Abstract: [Problem] To provide a chemically amplified positive type photoresist composition capable of forming a pattern having an excellent cross-sectional shape, and a pattern forming method using the same. [Means for Solution] A chemically amplified positive type photoresist composition comprising (A) a polymer which reacts with an acid to increase its solubility in an alkaline aqueous solution, (B) an organic solvent, (C) a first photo acid generator containing a cation having no polar group, and (D) a second photoacid generator containing a cation having a polar group, and a pattern forming method using the same.

Abstract: The present invention relates to a photosensitive resin composition suitable for forming a thick film, which comprises (A) an alkali-soluble resin, (B) at least one plasticizer selected from a group consisting of an alkali-soluble vinyl resin and an acid-dissociable group containing vinyl resin, (C) an acid generator, and (D) an organic solvent.

Abstract: [Problem to be Solved] To provide a bottom antireflective coating forming composition which can show high etching resistance and can be crosslinked even at a relatively low temperature. Further, to provide a resist pattern manufacturing method and a device manufacturing method using the same. [Solution] The bottom antireflective coating forming composition comprises: a polymer A comprising specific repeating units; a low molecular crosslinking agent having a molecular weight of 1 00 to 3,000; and a solvent. The resist pattern manufacturing method and the device manufacturing method using the same are also provided.

Abstract: [Problem] To provide a film forming composition and a method for preparing a film with which it is possible to form a film having excellent gas barrier performance. [Means for Solution] Disclosed is a film forming composition comprising: a polysiloxane that does not include a hydroxyl group or a carboxyl group; a polysilazane; and an organic solvent. Also disclosed is a method for preparing a film comprising: coating a substrate with said composition; and exposing the same to light.

Abstract: A photosensitive resin composition comprises an alkali soluble acrylic resin, a photosensitizer containing a quinone diazide group, a solvent and if necessary a hardening agent containing epoxy groups, wherein said solvent is a mixture of propylene glycol monomethyl ether acetate and a solvent having smaller vapor pressure than that of propylene glycol monomethyl ether acetate at the normal temperature and the atmospheric pressure and said composition further contains a phenolic compound represented by general formula (I) below. The photosensitive resin composition can be used suitably as a material for forming an interlayer dielectric or a planarization film, etc. of semiconductor devices, flat panel displays or the like. wherein R1, R2, R3, R4, R5, R6 and R7 represent independently H, a C1-4 alkyl group or whereupon each of m and n is independently an integer of 0 to 2, each of a, b, c, d, e, f, g and h is an integer of 0 to 5 satisfying a+b?5, c+d?5, e+f?5 and g+h?5, and i is an integer of 0 to 2.

Abstract: A photosensitive resin composition comprising an alkali-soluble acrylic resins, e.g. a copolymer of alkyl(meth)acrylate and (meth)acrylic acid, a photosensitizer having a quinone diazide group, a polycyclic phenolic compound represented by the general formula (I) described below and if necessary a hardening agent having an epoxy group for forming a planarization film or an interlayer dielectric film having high heat resistance, high insulation, high resolution and high transmittance which are applied for a semiconductor or a flat panel display and a thin film pattern forming method therewith.

Abstract: A radiation sensitive resin composition containing an alkali soluble resin and a quinonediazide group-containing photosensitizer, in which the photosensitizer comprises a mixture of two or more esters between tetrahydroxybenzophenone and 1,2-naphthoquinonediazidesulfonic acid having different esterification rates. As the photosensitizer, a mixture of photosensitizer A comprising an esterification product from tetrahydroxybenzophenone and 1,2-naphthoquinonediazide-5-sulfonic acid having an average esterification rate of X% (50≦X≦100) and photosensitizer B comprising an esterification product from tetrahydroxybenzophenone and 1,2-naphthoquinonediazide-5-sulfonic acid having an average esterification rate of Y% (25≦Y≦ (X−10)), with the mixing ratio A:B being 10-90:90-10, is preferred.