Abstract: Provided is a heat shielding member, a single crystal pulling apparatus, and a method of producing a single crystal silicon ingot, which can expand the margin of the crystal pulling rate with which a defect-free single crystal silicon can be obtained. A heat shielding member is provided in a single crystal pulling apparatus, the heat shielding member including a cylindrical tubular portion surrounding an outer circumferential surface of the single crystal silicon ingot; and a ring-shaped projecting portion under the tubular portion. The projecting portion has an upper wall, a bottom wall, and two vertical walls, a heat insulating material with a ring shape is provided in the space surrounded by those walls; and a gap between the vertical wall adjacent to the single crystal silicon ingot and the heat insulating material.

Abstract: Provided is a heat shielding member, a single crystal pulling apparatus, and a method of producing a single crystal silicon ingot, which can expand the margin of the crystal pulling rate with which a defect-free single crystal silicon can be obtained. A heat shielding member is provided in a single crystal pulling apparatus, the heat shielding member including a cylindrical tubular portion surrounding an outer circumferential surface of the single crystal silicon ingot; and a ring-shaped projecting portion under the tubular portion. The projecting portion has an upper wall, a bottom wall, and two vertical walls, a heat insulating material with a ring shape is provided in the space surrounded by those walls; and a gap between the vertical wall adjacent to the single crystal silicon ingot and the heat insulating material.

Abstract: A method for evaluating metal contamination of a silicon single crystal grown by the Czochralski method using a pulling apparatus in which a voltage can be applied between a crystal suspending member and a crucible comprises the steps of: setting the crystal suspending member as a negative electrode while setting the crucible as a positive electrode in a process for growing a non-convertible portion of the silicon single crystal; applying the voltage; collecting a sample from the non-convertible portion grown in association with the voltage application; and evaluating the metal contamination of the sample by an analysis in which Surface Photo Voltage method is adopted. In a process for growing an end-product convertible portion of the silicon single crystal, the voltage is applied such that the crystal suspending member is set as the positive electrode while the crucible is set as the negative electrode, or the voltage is not applied.

Abstract: A method for evaluating metal contamination of a silicon single crystal grown by the Czochralski method using a pulling apparatus in which a voltage can be applied between a crystal suspending member and a crucible comprises the steps of: setting the crystal suspending member as a negative electrode while setting the crucible as a positive electrode in a process for growing a non-convertible portion of the silicon single crystal; applying the voltage; collecting a sample from the non-convertible portion grown in association with the voltage application; and evaluating the metal contamination of the sample by an analysis in which Surface Photo Voltage method is adopted. In a process for growing an end-product convertible portion of the silicon single crystal, the voltage is applied such that the crystal suspending member is set as the positive electrode while the crucible is set as the negative electrode, or the voltage is not applied.

Abstract: When a silicon single crystal is grown by the CZ method using a pulling apparatus in which a voltage can be applied between a crystal suspending member and a crucible, the voltage is applied under the condition that the crystal suspending member is set as a negative electrode while the crucible is set as a positive electrode in a process for growing a lower end portion of a cylindrical portion or a tail portion which is of a non-convertible portion of the silicon single crystal. A sample wafer is collected from the lower end portion of the cylindrical portion or the tail portion, which is grown in association with the voltage application, and the metal contamination of the sample wafer is evaluated. The sample wafer has enough metal impurity concentration to evaluate the metal contamination.

Abstract: A method of growing a single crystal, wherein the yield in terms of specific resistance is improved by improving an effective segregation coefficient without affecting other characteristics, is provided: wherein a seed crystal provided to the lower end of a wire cable is immersed in melt in a crucible, a single crystal ingot is grown on the lower end portion of the seed crystal being elevated by pulling up the wire cable while rotating the same, and a horizontal magnetic field intensity to be applied to the silicon melt is changed in accordance with crystal positions along the growing axis direction of the single crystal ingot, so that an effective segregation coefficient of a dopant along the growing axis direction in the single crystal ingot becomes small.

Abstract: When a silicon single crystal is grown by the CZ method using a pulling apparatus in which a voltage can be applied between a crystal suspending member and a crucible, the voltage is applied under the condition that the crystal suspending member is set as a negative electrode while the crucible is set as a positive electrode in a process for growing a lower end portion of a cylindrical portion or a tail portion which is of a non-convertible portion of the silicon single crystal. A sample wafer is collected from the lower end portion of the cylindrical portion or the tail portion, which is grown in association with the voltage application, and the metal contamination of the sample wafer is evaluated. The sample wafer has enough metal impurity concentration to evaluate the metal contamination.

Abstract: The invention provides a method of producing silicon single crystals which comprises using the CZ method under application of a magnetic field to the silicon melt and under application of an electric current containing a component perpendicular to this magnetic field, namely using the EMCZ method, adjusting the pulling rate in the process of single crystal growth and thereby growing a single crystal under conditions such that the outside diameter of the potential region of the ring-forming oxidation-induced stacking faults (R-OSF) occurring in the cross section of the crystal is within the range of 70% to 0% of the crystal diameter. By this, wafers for semiconductors excellent in device characteristics such as gate oxide integrity or the like can be produced with high productivity without formation of COPs with not less than 0.1 &mgr;m in size, or of dislocation clusters.

Abstract: A method of producing a high-quality silicon single crystal of a large diameter and a long size in a good yield by controlling the positions where ring-like oxygen-induced stacking faults (R-OSF) occur in the crystal faces and minimizing grown-in defects such a dislocation clusters and infrared scattering bodies that are introduced in the pulling step. Wafers produced from the above-high-quality silicon single crystal contain little harmful defects that would deteriorate device characteristics and can be effectively adapted to larger scale integration and size reduction of the devices. Therefore, the method can be extensively utilized in the field of producing semiconductor silicon single crystals.

Abstract: A method for producing a high-quality silicon single crystal in which oxygen distribution, with respect to the growth and radial directions, is made uniform. The invention provides a magnetic Czochralski method involving pulling a single crystal while a cusp magnetic field is applied, the intensity of the cusp magnetic field and a mid-field position existing between upper and lower coils being held constant during pulling of a main body of the single crystal, having a diameter corresponding to that of a wafer product; said mid-field position being set at a specific range defined in terms of the surface level of a melt. Preferably, the cusp magnetic field held constant during a pulling step has an intensity of 300 G to 600 G; the mid-field position is set at −40 mm to −100 mm from the surface level of a melt; and the mid-field position is set at −7% to −18% from the surface level of the melt as normalized with respect to the inner diameter of a crucible.