Abstract: A defect inspection apparatus includes a movable stage for mounting a substrate having circuit patterns as an object of inspection, an irradiation optical system which irradiates a slit-shaped light beam from an oblique direction to the circuit patterns of the substrate, a detection optical system which includes an image sensor for receiving reflected/scattered light from the substrate by irradiation of the slit-shaped light beam and converting the received light into a signal, and an image processor which processes the signal. The irradiation optical system includes a cylindrical lens and a coherency reduction optical system, which receives the light beam and emits a plurality of slit-shaped light sub-beams which are spatially reduced in coherency in a light-converging direction of the cylindrical lens. The cylindrical lens focuses the plurality of slit-shaped light sub-beams into the slit-shaped light beam irradiated to the surface of the substrate.

Abstract: An apparatus for inspecting pattern defects, the apparatus including: a defect candidate extraction unit configured to perform a defect candidate extraction process by comparing a detected image signal with a reference image signal; and a defect detection unit configured to perform a defect detection process and a defect classification process based on a partial image containing a defect candidate that is extracted by the defect candidate extraction unit, wherein the processes performed by the defect candidate extraction unit and/or the defect detection unit are performed asynchronously with an image acquisition process.

Abstract: An inspection apparatus and method includes a light source which emits an ultraviolet laser beam, an illuminating unit having a polarization controller and an object lens for illuminating a specimen with light emitted from the light source and passed through the polarization controller and the object lens, a detection unit having a sensor for detecting light from the specimen illuminated by the illuminating unit, a processor which processes a signal output from the sensor so as to detect a defect on the specimen, and a display which displays information output from the processor. The processor processes an image formed from the signal output from the sensor in which the image is reduced in speckle pattern.

Abstract: A defect inspection apparatus and method includes a darkfield illumination optical system which conducts darkfield illumination upon the surface of a sample with irradiation light having at least one of wavelength band, a darkfield detection optical system which includes a reflecting objective lens for converging the light scattered from the surface of the sample that has been darkfield-illuminated with the irradiation light having the at least one wavelength band, and imaging optics for imaging onto a light-receiving surface of an image sensor the scattered light that the reflecting objective lens has converged, and an image processor which, in accordance with an image signal obtained from the image sensor of the darkfield detection optical system, discriminates defects or defect candidates present on the surface of the sample.

Abstract: A defect inspection apparatus includes a movable stage for mounting a substrate having circuit patterns as an object of inspection, an irradiation optical system which irradiates a slit-shaped light beam from an oblique direction to the circuit patterns of the substrate, a detection optical system which includes an image sensor for receiving reflected/scattered light from the substrate by irradiation of the slit-shaped light beam and converting the received light into a signal, and an image processor which processes the signal. The irradiation optical system includes a cylindrical lens and a coherency reduction optical system, which receives the light beam and emits a plurality of slit-shaped light sub-beams which are spatially reduced in coherency in a light-converging direction of the cylindrical lens. The cylindrical lens focuses the plurality of slit-shaped light sub-beams into the slit-shaped light beam irradiated to the surface of the substrate.

Abstract: A pattern inspection apparatus is provided to compare images of regions, corresponding to each other, of patterns that are formed so as to be identical and judge that non-coincident portions in the images are defects. The pattern inspection apparatus is equipped with an image comparing section which plots individual pixels of an inspection subject image in a feature space and detects excessively deviated points in the feature space as defects. Defects can be detected correctly even when the same patterns in images have a brightness difference due to a difference in the thickness of a film formed on a wafer.

Abstract: A pattern inspection method including: sequentially imaging plural chip formed on a substrate; selecting at least one of pattern sections of each inspection image obtained by the imaging, while discarding other pattern sections, based on a recipe created in advance, the recipe including information for determining which pattern sections to be selected or discarded; calculating position gap between an inspection image of a chip obtained by the imaging and a reference image stored in a memory by using positional information of pattern images included in the inspection image and reference pattern images which are both corresponding to the at least one of pattern sections selected at the selecting; aligning the inspection image and the reference image by using information of the calculated position gap; and comparing the aligned inspection image with the reference image, and extracting a difference between the two images as a defect candidate.

Abstract: A method and apparatus for detecting defects are provided for detecting harmful defects or foreign matter with high sensitivity on an object to be inspected with a transparent film, such as an oxide film, by reducing noise due to a circuit pattern. The apparatus for detecting defects includes a stage part on which a substrate specimen is put and which is arbitrarily movable in each of the X-Y-Z-? directions, an illumination system for irradiating the circuit pattern with light from an inclined direction, and an image-forming optical system for forming an image of an irradiated detection area on a detector from the upward and oblique directions. With this arrangement, diffracted light and scattered light caused on the circuit pattern through the illumination by the illumination system is collected. Furthermore, a spatial filter is provided on a Fourier transform surface for blocking the diffracted light from a linear part of the circuit pattern.

Abstract: When size of a defect on an increasingly miniaturized pattern is obtained by defect inspection apparatus in the related art, a value is inconveniently given, which is different from a measured value of the same defect by SEM. Thus, a dimension value of a defect detected by defect inspection apparatus needs to be accurately calculated to be approximated to a value measured by SEM. To this end, size of the defect detected by the defect inspection apparatus is corrected depending on feature quantity or type of the defect, thereby defect size can be accurately calculated.

Abstract: This invention is a defect inspection apparatus having a reflecting objective lens free from chromatic aberration, or an achromatic catadioptric lens, and a dioptric objective lens, and thus constructed to suppress changes in brightness due to multi-wavelength illumination (i.e., illumination with the irradiation light having a plurality of wavelength bands), to provide a clearer view of defects present on a sample, by means of selective wavelength detection in order to improve sensitivity, and to allow one spatial image on the sample to be acquired as different kinds of optical images.

Abstract: A pattern inspection method including: sequentially imaging plural chips formed on a substrate; selecting a pattern which is suitable for calculating position gap between an inspection image of a subject chip and reference image stored in memory from an image of a firstly imaged chip among said sequentially imaged plural chips formed on the substrate; computing position gap between an inspection image of a chip obtained by the sequential imaging and reference image stored in a memory by using a positional information of a pattern image included in the inspection image and a reference pattern image included in the reference image which are both corresponding to the pattern selected at the selecting; aligning the inspection image and the reference image by using information of the calculated position gap; and comparing the aligned inspection image with the reference image and extracting a difference as a defect candidate.

Abstract: A pattern inspection method and apparatus in which a deep ultraviolet light or an ultraviolet light is irradiated onto a specimen on which a pattern is formed, an image of the specimen which is irradiated with the deep ultraviolet light or the ultraviolet light is formed and the formed image is detected with a rear-surface irradiation type image sensor, which is sensitive to wavelengths of no greater than 400 nmm. A signal outputted from the image sensor is processed so as to detect a defect of the specimen by converting an analog image signal outputted from the image sensor to a digital image signal with an A/D converter, and a display displays information of the defect detected.

Abstract: According to the present invention, for a pattern inspection apparatus that compares images in corresponding areas of two patterns that are identical and that determines an unmatched portion between the images is a defect, a plurality of detection systems and a plurality of corresponding image comparison methods are provided. With this configuration, the affect of uneven brightnesses for a pattern that occurs due to differences in film thicknesses can be reduced, a highly sensitive pattern inspection can be performed, a variety of defects can be revealed, and the pattern inspection apparatus can be applied for processing performed within a wide range. Furthermore, the pattern inspection apparatus also includes a unit for converting the tone of image signals of comparison images for a plurality of different processing units, and when a difference in brightness occurs in the same pattern of the images, a defect can be correctly detected.

Abstract: A pattern inspection apparatus which compares images of regions, corresponding to each other, of patterns that are formed so as to be identical and judges that non-coincident portions in the images are defects. The pattern inspection apparatus is equipped with an image comparing section which plots individual pixels of an inspection subject image in a feature space and detects excessively deviated points in the feature space as defects. Defects can be detected correctly even when the same patterns in images have a brightness difference due to a difference in the thickness of a film formed on a wafer.

Abstract: A pattern inspection apparatus includes a light source which emits ultraviolet light, an irradiator which reduces coherency of the ultraviolet light and irradiates the coherency reduced ultraviolet light onto a specimen on which a pattern is formed through an objective lens, and a focus control means which projects light on the specimen from outside the objective lens, detects light reflected from the specimen by the projection and adjusts a height of the specimen relative to the objective lens. The apparatus further includes an image which forms an image of the specimen irradiated with the ultraviolet light and detects the formed image with a sensor, an image processor which processes a signal outputted from the sensor to detect a defect of the specimen, and a display which displays information of the defect detected by the image processor.

Abstract: In a detection step, light produced on a sample in plural directions are collectively detected using a plurality of detectors. Multidimensional features containing information about scattered light distributions are extracted based on a plurality of detector outputs obtained. The feature is compared with data in a scattered light distribution library thereby to determine the types and sizes of defects. In a feature extraction step, a feature outputted based on the magnitude of each of scattered light detected signals of scatterers already known in refractive index and shape, which are obtained in the detection step, is corrected, thereby realizing high precision determination.

Abstract: The invention relates to a defect inspection apparatus in which images of mutually corresponding areas in identically formed patterns on a sample are compared to detect mismatched portions of the images as defects. The defect inspection apparatus includes an image comparator that creates a feature space with the use of feature quantities calculated from pixels of images acquired under different optical conditions and detects outlier values in the feature space as defects. Thus, the defect inspection apparatus can detect various defects with high sensitivity even if there are luminance differences between images of identical patterns which are attributable to the difference in wafer pattern thickness.

Abstract: To inspect a substrate such as a semiconductor substrate for surface roughness at high precision. The surface roughness of the substrate is measured in each frequency band of the surface roughness by applying a light to the substrate surface and detecting a scattered light or reflected light at a plurality of azimuth or elevation angles.

Abstract: According to the present invention, for a pattern inspection apparatus that compares images in corresponding areas of two patterns that are identical and that determines an unmatched portion between the images is a defect, a plurality of detection systems and a plurality of corresponding image comparison methods are provided. With this configuration, the affect of uneven brightnesses for a pattern that occurs due to differences in film thicknesses can be reduced, a highly sensitive pattern inspection can be performed, a variety of defects can be revealed, and the pattern inspection apparatus can be applied for processing performed within a wide range. Furthermore, the pattern inspection apparatus also includes a unit for converting the tone of image signals of comparison images for a plurality of different processing units, and when a difference in brightness occurs in the same pattern of the images, a defect can be correctly detected.

Abstract: The present invention relates to a high-sensitivity inspection method and apparatus adapted for the fine-structuring of patterns, wherein defect inspection sensitivity is improved using the following technologies: detection optical system is improved in resolution by filling the clearance between an objective lens 30 and a sample 1, with a liquid, and increasing effective NA (Numerical Aperture); and when a transparent interlayer-insulating film is formed on the surface of the sample, amplitude splitting at the interface between the liquid and the insulating film is suppressed for reduction in the unevenness of optical images in brightness due to interference of thin-film, by immersing the clearance between the objective lens and the sample, with a liquid of a refractive index close to that of the transparent film.