Abstract: A transmission apparatus including: a layer multiplexing unit configured to assign, to a radio resource which is divided based on a time, a frequency and a layer, a bit sequence which constitutes at least one information source to be transmitted, in accordance with a communication state and a priority level of the information source; and a layer coding unit configured to perform a layer coding processing for the bit sequence assigned to the radio resource. The layer multiplexing unit performs the assignment so that a length of each bit sequence assigned to each radio resource becomes equivalent.

Abstract: The present invention relates to a method for biasing and making conductive an insulated gate semiconductor device having main electrodes at both surfaces of a semiconductor substrate and a gate electrode at one surface. Charges are accumulated between the gate electrode and the main electrode at the opposite surface while a voltage is applied across the electrodes storing a charge. The element is made conductive by discharging the accumulated charges when a voltage is applied in the conductive direction to such semiconductor element. The device can be used to drive the primary side of an ignition system in an internal combustion engine.

Abstract: A semiconductor pressure sensor has a sealing reference pressure chamber container formed by a cap and a metal bottom plate, a semiconductor pressure sensitive diaphragm to which pressure to be measured is applied on the side of the diaphragm opposite to the inside space of said container, and a circuit substrate having a circuit connected to a strain gauge mounted on the pressure sensitive diaphragm. The diaphragm is mounted to said bottom plate, and the circuit substrate is fixed to one side of a metal plate having a thermal expansion factor approximately equal to the thermal expansion factor of the circuit substrate material. The other side of the metal plate is fixed to said bottom plate only over a relatively small area. The arrangement reduces thermal stress to the circuit substrate.

Abstract: In the embodiment is specifically described a method for irradiating a transistor device with radiant rays. The top surface of the semiconductor crystal contained in the transistor device is exposed to the radiant rays so that the radiated energy impinging upon a preselected part of the base region, underneath the emitter electrode, is less than that impinging upon the other parts of the base region. Masking and radiant ray absorptive material are used to facilitate the process. Thereafter, the device and/or crystal is subjected to heat treatment to selectively improve such characteristics of the transistor as amplifying and switching characteristics to produce transistors suitable to a necessity of different applications.