Patents by Inventor Shunji Moribe

Shunji Moribe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for producing semiconductor device having crystallized film formed from deposited amorphous film
    Patent number: 6559037
    Abstract: A semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columnar structure and a crystal orientation of individual crystal grains is almost in a uniform direction can be produced by depositing a non-impurity-doped silicon thin film or an impurity layer on an interface of underlying film, followed by deposition of impurity-doped silicon thin film, if necessary, followed by heat treatment for polycrystallization.
    Type: Grant
    Filed: March 16, 2001
    Date of Patent: May 6, 2003
    Assignee: Hitachi, Ltd.
    Inventors: Hideo Miura, Shunji Moribe, Hisayuki Kato, Atsuyoshi Koike, Shuji Ikeda, Asao Nishimura
  • Semiconductor device and production thereof
    Publication number: 20020013038
    Abstract: A semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columnar structure and a crystal orientation of individual crystal grains is almost in a uniform direction can be produced by depositing a non-impurity-doped silicon thin film or an impurity layer on an interface of underlying film, followed by deposition of impurity-doped silicon thin film, if necessary, followed by heat treatment for polycrystallization.
    Type: Application
    Filed: March 16, 2001
    Publication date: January 31, 2002
    Inventors: Hideo Miura, Shunji Moribe, Hisayuki Kato, Atsuyoshi Koike, Shuji Ikeda, Asao Nishimura
  • Semiconductor device and production thereof
    Patent number: 6204155
    Abstract: A semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columnar structure and a crystal orientation of individual crystal grains is almost in a uniform direction can be produced by depositing a non-impurity-doped silicon thin film or an impurity layer on an interface of underlying film, followed by deposition of impurity-doped silicon thin film, if necessary, followed by heat treatment for polycrystallization.
    Type: Grant
    Filed: June 19, 2000
    Date of Patent: March 20, 2001
    Assignee: Hitachi, Ltd.
    Inventors: Hideo Miura, Shunji Moribe, Hisayuki Kato, Atsuyoshi Koike, Shuji Ikeda, Asao Nishimura
  • Semiconductor device and production thereof
    Patent number: 6187100
    Abstract: A semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columnar structure and a crystal orientation of individual crystal grains is almost in a uniform direction can be produced by depositing a non-impurity-doped silicon thin film or an impurity layer on an interface of underlying film, followed by deposition of impurity-doped silicon thin film, if necessary, followed by heat treatment for polycrystallization.
    Type: Grant
    Filed: October 7, 1999
    Date of Patent: February 13, 2001
    Assignee: Hitachi, Ltd.
    Inventors: Hideo Miura, Shunji Moribe, Hisayuki Kato, Atsuyoshi Koike, Shuji Ikeda, Asao Nishimura
  • Semiconductor device and production thereof
    Patent number: 6080611
    Abstract: A semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columnar structure and a crystal orientation of individual crystal grains is almost in a uniform direction can be produced by depositing a non-impurity-doped silicon thin film or an impurity layer on an interface of underlying film, followed by deposition of impurity-doped silicon thin film, if necessary, followed by heat treatment for polycrystallization.
    Type: Grant
    Filed: June 24, 1997
    Date of Patent: June 27, 2000
    Assignee: Hitachi, Ltd.
    Inventors: Hideo Miura, Shunji Moribe, Hisayuki Kato, Atsuyoshi Koike, Shuji Ikeda, Asao Nishimura
  • Semiconductor device having a polycrystalline silicon film with crystal grains having a uniform orientation
    Patent number: 5670793
    Abstract: A semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columnar structure and a crystal orientation of individual crystal grains is almost in a uniform direction can be produced by depositing a non-impurity-doped silicon thin film or an impurity layer on an interface of underlying film, followed by deposition of impurity-doped silicon thin film, if necessary, followed by heat treatment for polycrystallization.
    Type: Grant
    Filed: September 14, 1995
    Date of Patent: September 23, 1997
    Assignee: Hitachi, Ltd.
    Inventors: Hideo Miura, Shunji Moribe, Hisayuki Kato, Atsuyoshi Koike, Shuji Ikeda, Asao Nishimura