Patents by Inventor Shunji YOSHIMI

Shunji YOSHIMI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220200548
    Abstract: A second member is joined in surface contact with a first surface of a first member including a semiconductor region made from an elemental semiconductor. The second member includes a radio-frequency amplifier circuit made from a compound semiconductor. A conductive protrusion projects from the second member toward a side opposite to the first member. The first member includes a temperature measurement element that detects a temperature.
    Type: Application
    Filed: December 9, 2021
    Publication date: June 23, 2022
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Mikiko FUKASAWA, Satoshi GOTO, Shunji YOSHIMI, Yuji TAKEMATSU, Mitsunori SAMATA
  • Publication number: 20220199557
    Abstract: In a semiconductor device, a first member having a first surface includes a plurality of circuit blocks disposed in an inner region of the first surface when the first surface is viewed in plan. The second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes a plurality of first transistors that are connected in parallel to each other and form a first amplifier circuit. A conductive protrusion protrudes from the second member on an opposite side to the first member. The first transistors are disposed in a region not overlapping any of the circuit blocks in the first member in a plan view.
    Type: Application
    Filed: December 13, 2021
    Publication date: June 23, 2022
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Shunji YOSHIMI, Satoshi GOTO, Mikiko FUKASAWA
  • Publication number: 20220199558
    Abstract: In a semiconductor device, when a first surface of a first member is viewed in plan, at least one switch circuit including a switch is disposed within the first surface. A second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes a plurality of transistors that are made of a compound semiconductor and form a radio-frequency amplifier circuit. A first conductive protrusion protrudes from the second member on an opposite side to the first member. The first member includes a circuit element disposed between the radio-frequency amplifier circuit and the at least one switch circuit in a plan view, the circuit element not forming the switch circuit.
    Type: Application
    Filed: December 13, 2021
    Publication date: June 23, 2022
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Satoshi GOTO, Shunji YOSHIMI, Mikiko FUKASAWA
  • Publication number: 20220199484
    Abstract: In a semiconductor device, when a first surface of a first member is viewed in plan, a plurality of circuit blocks are disposed in an inner region of the first surface. The second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes one or more circuit blocks. A conductive protrusion protrudes from the second member on an opposite side to the first member. One of the circuit blocks in the second member constitutes a first amplifier circuit including a plurality of first transistors that are connected in parallel to each other. At least one of the circuit blocks in the first member overlaps at least one circuit block in the second member in a plan view.
    Type: Application
    Filed: December 17, 2021
    Publication date: June 23, 2022
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Mikiko FUKASAWA, Satoshi GOTO, Shunji YOSHIMI
  • Publication number: 20220190847
    Abstract: A semiconductor device including a radio-frequency amplifier circuit and a band selection switch are mounted on or in a module substrate. An output matching circuit includes at least one passive element disposed on or in the module substrate. The output matching circuit is coupled between the radio-frequency amplifier circuit and the band selection switch. The semiconductor device includes a first member having a semiconductor portion made of an elemental semiconductor and a second member joined to the first member in surface contact with the first member. The radio-frequency amplifier circuit including a semiconductor element made of a compound semiconductor is formed at the second member. The semiconductor device is disposed in close proximity to the output matching circuit in plan view. The output matching circuit is disposed in close proximity to the band selection switch.
    Type: Application
    Filed: December 9, 2021
    Publication date: June 16, 2022
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Satoshi GOTO, Shunji YOSHIMI, Mitsunori SAMATA
  • Publication number: 20220189893
    Abstract: A semiconductor device including a radio-frequency amplifier circuit and a band selection switch is mounted on or in a module substrate. An output matching circuit coupled between the radio-frequency amplifier circuit and the band selection switch is on or in the module substrate. The semiconductor device includes a first member at which the band selection switch having a semiconductor element made of an elemental semiconductor is formed and a second member joined to the first member in surface contact therewith. The radio-frequency amplifier circuit including a semiconductor element made of a compound semiconductor is formed at the second member. Conductive protrusions are raised from first and second members. The semiconductor device is mounted on or in the module substrate with the conductive protrusions interposed therebetween, and in plan view, is in close proximity to the output matching circuit or overlaps a passive element constituting the output matching circuit.
    Type: Application
    Filed: December 9, 2021
    Publication date: June 16, 2022
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Shunji YOSHIMI, Mitsunori SAMATA
  • Publication number: 20220108936
    Abstract: In a semiconductor module, a first conductive portion is raised on a lower surface of a first member to which a second member including a semiconductor element and being smaller than the first member in plan view is joined. A second conductive portion is raised at the second member in the same direction as the first conductive portion. The first and second members are mounted on a module substrate with the interposed first and second conductive portions. A sealing material is disposed on a mounting surface of the module substrate, while covering at least an area of the first member. The sealing material has a top surface facing in the same direction as the top surface of the first member and side surfaces connected to its top surface. A metal film is disposed on the top and side surfaces of the sealing material and side surfaces of the module substrate.
    Type: Application
    Filed: October 5, 2021
    Publication date: April 7, 2022
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Shunji YOSHIMI, Yuji TAKEMATSU, Yukiya YAMAGUCHI, Takanori UEJIMA, Satoshi GOTO, Satoshi ARAYASHIKI
  • Publication number: 20220109411
    Abstract: A semiconductor devices comprises a first member including a first circuit partially formed by an elemental semiconductor element at a surface layer, a first conductive raised portion at the first member, and a second member smaller than the first member in plan view joined to the first member. The second member includes a second circuit partially formed by a compound semiconductor element. A second conductive raised portion is at the second member. A power amplifier includes a first-stage amplifier circuit included in the first or second circuit and a second-stage amplifier circuit included in the second circuit. The first circuit includes a first switch for inputting to the first-stage amplifier circuit a radio-frequency signal inputted to a selected contact, a control circuit to control the first- and second-stage amplifier circuits, and a second switch for outputting from a selected contact a radio-frequency signal outputted by the second-stage amplifier circuit.
    Type: Application
    Filed: September 30, 2021
    Publication date: April 7, 2022
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Shunji YOSHIMI, Yuji TAKEMATSU, Yukiya YAMAGUCHI, Takanori UEJIMA, Satoshi GOTO, Satoshi ARAYASHIKI