Abstract: A silver-plated product is produced by forming a surface layer of silver on a base material by electroplating at a liquid temperature of 10 to 35° C. and a current density of 3 to 15 A/dm2 in a silver plating solution so as to satisfy (32.6x?300)?y?(32.6x+200) assuming that a product of a concentration of potassium cyanide in the silver plating solution and a current density is y (g·A/L·dm2) and that a liquid temperature of the silver plating solution is x (° C.), the silver plating solution containing 80 to 110 g/L of silver, 70 to 160 g/L of potassium cyanide and 55 to 70 mg/L of selenium.

Abstract: A silver-plated product, wherein the preferred orientation plane of a surface layer of silver is {111} plane and wherein the ratio of the full-width at half maximum of an X-ray diffraction peak on {111} plane after heating the silver-plated product at 50° C. for 168 hours to the full-width at half maximum of an X-ray diffraction peak on {111} plane before the heating of the silver-plated product is not less than 0.5, is produced by forming the surface layer on a base material by electroplating at a liquid temperature of 12 to 24° C. and a current density of 3 to 8 A/dm2 in a silver plating solution which contains 80 to 110 g/L of silver, 70 to 160 g/L of potassium cyanide and 55 to 70 mg/L of selenium, so as to cause the product of the concentration of potassium cyanide and the current density to be 840 g·A/L·dm2 or less.

Abstract: A silver-plated product is produced by forming a surface layer of silver on a base material by electroplating at a liquid temperature of 10 to 35° C. and a current density of 3 to 15 A/dm2 in a silver plating solution so as to satisfy (32.6x?300)?y?(32.6x+200) assuming that a product of a concentration of potassium cyanide in the silver plating solution and a current density is y (g·A/L·dm2) and that a liquid temperature of the silver plating solution is x (° C.), the silver plating solution containing 80 to 110 g/L of silver, 70 to 160 g/L of potassium cyanide and 55 to 70 mg/L of selenium.

Abstract: A silver-plated product is produced by forming a surface layer of silver on a base material by electroplating at a liquid temperature of 10 to 35° C. and a current density of 3 to 15 A/dm2 in a silver plating solution so as to satisfy (32.6x?300)?y?(32.6x+200) assuming that a product of a concentration of potassium cyanide in the silver plating solution and a current density is y (g·A/L·dm2) and that a liquid temperature of the silver plating solution is x (° C.), the silver plating solution containing 80 to 110 g/L of silver, 70 to 160 g/L of potassium cyanide and 55 to 70 mg/L of selenium.

Abstract: A silver-plated product is produced by forming a surface layer of silver on a base material by electroplating at a liquid temperature of 10 to 35° C. and a current density of 3 to 15 A/dm2 in a silver plating solution so as to satisfy (32.6x?300)?y?(32.6x+200) assuming that a product of a concentration of potassium cyanide in the silver plating solution and a current density is y (g·A/L·dm2) and that a liquid temperature of the silver plating solution is x (° C.), the silver plating solution containing 80 to 110 g/L of silver, 70 to 160 g/L of potassium cyanide and 55 to 70 mg/L of selenium.

Abstract: A silver-plated product, wherein the preferred orientation plane of a surface layer of silver is {111} plane and wherein the ratio of the full-width at half maximum of an X-ray diffraction peak on {111} plane after heating the silver-plated product at 50° C. for 168 hours to the full-width at half maximum of an X-ray diffraction peak on {111} plane before the heating of the silver-plated product is not less than 0.5, is produced by forming the surface layer on a base material by electroplating at a liquid temperature of 12 to 24° C. and a current density of 3 to 8 A/dm2 in a silver plating solution which contains 80 to 110 g/L of silver, 70 to 160 g/L of potassium cyanide and 55 to 70 mg/L of selenium, so as to cause the product of the concentration of potassium cyanide and the current density to be 840 g·A/L·dm2 or less.