Abstract: One limitation to the realisation of mass produced electrochemical cells is a lack of high resolution patterning techniques providing accurate alignment. A method of fabricating a patterned structure on a polymer layer for the manufacture of an electrochemical cell is provided. The method comprises: depositing a polymer layer upon a substrate; and stamping the polymer layer to form an embossed polymer layer using an embossing tool, the embossing tool having a first array of adjacent cells, spaced from one another and extending from the stamping face of the embossing tool and thereby forming a second array of adjacent cells, spaced from one another and extending as cavities within the embossed polymer layer.

Abstract: A method of fabricating a bank structure, includes: (a) forming a multi-layer structure on an underlying surface thereof, the multi-layer structure having at least a first layer and a second layer, (b) embossing the second layer so as to define a bank pattern in the second layer, (c) transferring the bank pattern to the first layer so as to form a bank structure defining an indented region; and (d) removing the second layer after the step (c) so as to expose a surface of the first layer as a top surface of the bank structure.

Abstract: The invention disclosed relates to the fabrication of electronic devices. A method for fabricating an electronic device is disclosed, comprising embossing a surface of a work-piece 200, 202 using an embossing tool 204, so as to form a microstructure having at least two levels of thickness contrast on the work-piece surface, and depositing fluid 208 containing a functional material onto the microstructure. In a preferred embodiment, the step of depositing fluid 208 comprises ink-jet printing. An embossing tool 204 for creating a microstructure on a work-piece 200, 202 is also disclosed, the embossing tool 204 comprising a first surface and steps of at least two different heights relative to the first surface.

Abstract: An organic electroluminescent device comprising: a substrate; a first electrode disposed over the substrate for injecting charge of a first polarity; a second electrode disposed over the first electrode for injecting charge of a second polarity opposite to said first polarity; an organic light emitting layer disposed between the first and the second electrode, the second electrode being transparent to light emitted by the light emitting layer; and a transparent encapsulant disposed over the second electrode, wherein the transparent encapsulant comprises a microlens array formed by a top surface of the transparent encapsulant and a diffraction grating formed by a bottom surface of the transparent encapsulant.

Abstract: The present invention relates to flexible substrates having on their surface a wetting contrast. The wetting contrast comprises adjacent areas of different hydrophilicity and/or oleophilicity. The present invention further relates to methods of production of such substrates and to methods of producing microelectronic components wherein electronically functional material is deposited onto said substrates. According to a first aspect of the present invention, a method of producing a flexible substrate having a wetting contrast is provided. The method includes the step of forming a first area comprising an inorganic material on a flexible substrate precursor to form a substrate wherein the inorganic material is at least partially exposed at the substrate surface and the first area constitutes a pattern on the precursor surface.

Abstract: According to a first aspect, the present invention provides a method for forming a semiconductor film comprising a first step of providing a solution comprising a first organic semiconductor and a second organic semiconductor on a surface of a substrate. The solution is then dried to form the semiconductor film so that it comprises discrete domains of the first organic semiconductor in a matrix of the second organic semiconductor which electrically connects adjacent domains of the first organic semiconductor. The first and second semiconductors are of the same conductivity type. The mobility of charge carriers in the domains of the first organic semiconductor is higher than the mobility of charge carriers in the matrix of the second organic semiconductor.

Abstract: A method of forming an electronic device on a substrate 10, comprising: embossing the substrate 10, surface treating the substrate so that unindented portions 11 repel a solution of a first material 60, and depositing a solution of the first material 60 in indentations 12 on the substrate 10 formed by the embossing. The substrate is then annealed so that level of the first material is the same as the surface of the substrate. The first material 60 in the indentations can then, for example, be used as the source and drain in the subsequent formation of a TFT.

Abstract: Provided is a field-effect transistor (10) which comprises a metal or carbon source electrode (14) and a layer of a functional organic semiconductor (28). A column of an injection material (48) extends through the layer of the functional organic semiconductor (28), the column being in contact with both the source electrode (14) and the layer of the functional organic semiconductor (28). This column (48) facilitates the transfer charge carriers between the source electrode (14) and semiconductor layer (28). The injection material is preferably an organic compound such as 3-hexylthiophene, polyarylamine, poly(3,4-ethylenedioxythiophene)-polystyrenesulphonic acid or polyaniline.

Abstract: Provided is a method for forming a semiconductor element such as film. The method comprises the steps of: (i) depositing a suspension of particles of a first semiconductor and a solution of a second semiconductor or a precursor thereof on a surface of a substrate such that a mixture comprising the particles of the first semiconductor suspended in a liquid phase comprising the second semiconductor or precursor thereof results thereon; and (ii) solidifying the mixture to form the semiconductor element comprising particles of the first semiconductor in a matrix of the second semiconductor which electrically connects adjacent particles of the first semiconductor, the first and second semiconductors being of the same conductivity type and being formed from either the same or different materials. The method does not require any step of vacuum deposition or sintering. Also provided is a semiconductor element itself.

Abstract: Provided is a method of depositing a polythiophene semiconductor on a substrate. First, the semiconductor is dissolved in a solvent comprising a halogen-containing aromatic compound. Then, the resulting solution is ink-jet printed onto the substrate. The method is useful in the production of microelectronic components such as thin film transistor devices.

Abstract: The present invention relates to a method of dedoping an organic semiconductor comprising the step of contacting a doped organic semiconductor with a compound of formula (1): wherein R1-R8 each independently represents a hydrogen atom or a C1-C6 alkyl group which may be linear or branched and which may be optionally substituted with one or more hydroxyl groups and/or one or more halogen atoms and/or a C1-C3 alkoxy group; one or more pairs of R groups which are not hydrogen may join to form a cyclic group according to the following pairings: R1 and R2; R2 and R3; R3 and R4; R4 and R5; R5 and R6; R6 and R7; R7 and R8; and R8 and R1.

Abstract: Provided is a method of forming a heterojunction of contiguous layers of organic semiconducting polymers. The method comprises firstly forming a layer of a first organic semiconducting polymer on a substrate. A solution of a film-forming material is then deposited on the layer of the first organic semiconducting polymer. The first organic semiconducting polymer is insoluble in this solution and so is not disturbed by its deposition. The deposited solution is then dried to form a temporary film having a thickness of less then 20 nm formed from the film-forming material. Next a solution of a second organic semiconducting polymer dissolved in an organic solvent is deposited on the temporary film and this solution dried. The solubility of the material forming the temporary film in the organic solvent and the thickness of the temporary film are such that the organic solvent permeates through the thickness of the temporary film during drying of the solution of the second organic semiconducting polymer.

Abstract: Provided is a patterning method capable of fabricating high resolution structures without using a high resolution patterning step. The method comprises the steps of: (i) pre-patterning a layer of material (12) on a substrate (10), (ii) spin-coating a solution of a film-forming substance over the pre-patterned substrate, (iii) drying the spin-coated solution to form a film (14) of the film-forming substance on the unpatterned areas of the substrate and on the surface and sides of the pre-patterned material, (iv) etching the dried film in such a way that it remains only around the sides of the pre-patterned material, and (v) removing the pre-patterned material to leave ridges (20) of the film-forming substance on the substrate, the pattern of the ridges corresponding to the outline of the pre-patterned material.

Abstract: A method of modulating a surface includes: (a) forming a BCB layer on a surface of a target object; and (b) conducting a CF4 plasma exposure against a top surface of the BCB layer.

Abstract: The present invention relates to a self-aligning patterning method which can be used to manufacture a plurality of multi-layer thin film transistors on a substrate. The method comprises firstly forming a patterned mask 20 on the surface of a sacrificial layer 18 which is part of a multi-layer structure 10 which comprises the substrate 12, a conductive layer 14, an insulating layer 16 and the sacrificial layer 18. Unpatterned areas are then etched to remove the corresponding areas of the sacrificial layer, the insulating layer 16 and the conductive layer 14 thereby leaving voids. A layer of dielectric 22 is then deposited over the etched multi-layer structure to at least substantially fill the voids. The deposited dielectric is then etched in order to at least partially expose the sides of the remaining areas 28 of the sacrificial layer. Conductive material 30 is then deposited on the surface of the etched dielectric.

Abstract: A method for forming a surface energy difference bank includes: providing a material for forming a self-assembled molecular film onto a contact region of a stamps the contact region being formed of a plurality of apical faces of a plurality of elastic elements protruding out from a base part of the stamp; and transferring the material from the contact region to an object face by contacting the contact region with the object face so as to obtain the surface energy difference bank that is composed of a plurality of dots on the object face, the plurality of the dots being made of the self assembled molecular film and corresponding to the plurality of elastic elements.

Abstract: A method of fabricating a bank structure, includes: (a) forming a multi-layer structure on an underlying surface thereof, the multi-layer structure having at least a first layer and a second layer, (b) embossing the second layer so as to define a bank pattern in the second layer, (c) transferring the bank pattern to the first layer so as to form a bank structure defining an indented region; and (d) removing the second layer after the step (c) so as to expose a surface of the first layer as a top surface of the bank structure.

Abstract: The invention disclosed relates to the fabrication of electronic devices. A method for fabricating an electronic device is disclosed, comprising embossing a surface of a work-piece 200, 202 using an embossing tool 204, so as to form a microstructure having at least two levels of thickness contrast on the work-piece surface, and depositing fluid 208 containing a functional material onto the microstructure. In a preferred embodiment, the step of depositing fluid 208 comprises ink-jet printing. An embossing tool 204 for creating a microstructure on a work-piece 200, 202 is also disclosed, the embossing tool 204 comprising a first surface and steps of at least two different heights relative to the first surface.

Abstract: Provided is a method forming a desired pattern of electronically functional material 3 on a substrate 1. The method comprises the steps of: creating a first layer of patterning material 2 on the substrate whilst leaving areas of the substrate exposed to define said desired pattern; printing a suspension comprising particles of the electronically functional material 3 in a liquid dispersant, to which the patterning material is impervious, on the patterning material and the exposed substrate; removing at least some of the liquid dispersant from the suspension to consolidate the particles; and applying a first solvent to said consolidated particles which is capable of solubilizing the patterning material 2 and to which the consolidated particles are pervious so that the patterning material is removed from the substrate 1 together with any overlying electronically functional material 3.

Abstract: One limitation to the realisation of mass produced electrochemical cells is a lack of high resolution patterning techniques providing accurate alignment. A method of fabricating a patterned structure on a polymer layer for the manufacture of an electrochemical cell is provided. The method comprises: depositing a polymer layer upon a substrate; and stamping the polymer layer to form an embossed polymer layer using an embossing tool, the embossing tool having a first array of adjacent cells, spaced from one another and extending from the stamping face of the embossing tool and thereby forming a second array of adjacent cells, spaced from one another and extending as cavities within the embossed polymer layer.