Abstract: An information memory device capable of reading and writing of information by mechanical operation of a floating gate layer, in which a gate insulation film has a cavity (6), and a floating gate layer (5) having two stable deflection states in the cavity (6), the state stabilized by deflecting toward the channel side of transistor, and the state stabilized by deflecting toward the gate (7) side, writing and reading of information can be made by changing the stable deflection state of the floating gate layer (5) by Coulomb interactive force between the electrons (or positive holes 8) accumulated in the floating gate layer (5) and external electric field, and by reading the channel current change based on the state of the floating gate layer (5).

Abstract: The present invention provides a solid state light-emissive display apparatus of high brightness and efficiency, high reliability, and of thin type, and method of manufacturing the same at low cost. Said apparatus has the luminous thin film made up by laminating or mixing crystal fine particle coated with insulator (5) of nm size and fluorescent fine particles (7) of nm size, and the lower electrode and the transparent upper electrode sandwiching said luminous thin film, wherein the electrons injected from said lower electrode are accelerated in the crystal fine particle coated with insulator layer (6) not being scattered by phonons to become high energy ballistic electrons, and form excitons (13) by colliding excitation of fluorescent fine particles. Since said fluorescent fine particles are of nm size, the exciton concentration is high, and luminescence intensity by extinction of excitons is also high.

Abstract: An information memory device capable of reading and writing of information by mechanical operation of a floating gate layer, in which a gate insulation film has a cavity (6), and a floating gate layer (5) having two stable deflection states in the cavity (6), the state stabilized by deflecting toward the channel side of transistor, and the state stabilized by deflecting toward the gate (7) side, writing and reading of information can be made by changing the stable deflection state of the floating gate layer (5) by Coulomb interactive force between the electrons (or positive holes 8) accumulated in the floating gate layer (5) and external electric field, and by reading the channel current change based on the state of the floating gate layer (5).

Abstract: A micro electron gun that is capable of extracting electrons from a semiconductor utilizing a quantum size effect and that can be mounted individually for each of pixels is disclosed, as well as a picture display apparatus using such electron guns which is high in quantum efficiency, of high brightness and thin, as well as methods of manufacture thereof. Conduction electrons from a n-type semiconductor substrate (2) are accelerated under an electric field through a layer or layers (4) of quantum size effect micro particles (3) formed on surfaces of the n-type semiconductor substrate (2) and passed therethrough without undergoing phonon scattering, so that they when arriving at an electrode (5) may possess an amount of energy not less than the work function of the electrode (5) and are thus allowed to spring out into a vacuum.

Abstract: The present invention provides a solid state light-emissive display apparatus of high brightness and efficiency, high reliability, and of thin type, and method of manufacturing the same at low cost.

Abstract: A micro electron gun that is capable of extracting electrons from a semiconductor utilizing a quantum size effect and that can be mounted individually for each of pixels is disclosed, as well as a picture display apparatus using such electron guns which is high in quantum efficiency, of high brightness and thin, as well as methods of manufacture thereof. Conduction electrons from a n-type semiconductor substrate (2) are accelerated under an electric field through a layer or layers (4) of quantum size effect micro particles (3) formed on surfaces of the n-type semiconductor substrate (2) and passed therethrough without undergoing phonon scattering, so that they when arriving at an electrode (5) may possess an amount of energy not less than the work function of the electrode (5) and are thus allowed to spring out into a vacuum.

Abstract: A micro electron gun that is capable of extracting electrons from a semiconductor utilizing a quantum size effect and that can be mounted individually for each of pixels is disclosed, as well as a picture display apparatus using such electron guns which is high in quantum efficiency, of high brightness and thin, as well as methods of manufacture thereof. Conduction electrons from a n-type semiconductor substrate (2) are accelerated under an electric field through a layer or layers (4) of quantum size effect micro particles (3) formed on surfaces of the n-type semiconductor substrate (2) and passed therethrough without undergoing phonon scattering, so that they when arriving at an electrode (5) may possess an amount of energy not less than the work function of the electrode (5) and are thus allowed to spring out into a vacuum.

Abstract: A micro electron gun that is capable of extracting electrons from a semiconductor utilizing a quantum size effect and that can be mounted individually for each of pixels is disclosed, as well as a picture display apparatus using such electron guns which is high in quantum efficiency, of high brightness and thin, as well as methods of manufacture thereof. Conduction electrons from a n-type semiconductor substrate (2) are accelerated under an electric field through a layer or layers (4) of quantum size effect micro particles (3) formed on surfaces of the n-type semiconductor substrate (2) and passed therethrough without undergoing phonon scattering, so that they when arriving at an electrode (5) may possess an amount of energy not less than the work function of the electrode (5) and are thus allowed to spring out into a vacuum.

Abstract: There is provided an improved process of forming a functional epitaxial film by using two kinds of active species and chemically reacting them.One of the species is an activated substance which contains silicon atoms or germanium atoms and halogen atoms. The other species is one which is generated from a chemical substance capable of contributing to formation of a film and chemically reactive with the former active species.

Abstract: A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing silicon and a halogen and an active species (B) formed from a chemical substance for film formation which is chemically mutually reactive with said active species (A) separately from each other, then providing them with discharge energy and thereby allowing both the species to react chemically with each other to form a deposited film on the substrate.

Abstract: A process for forming a deposited film on a substrate in the absence of a plasma is conducted by generating in an activation space an activated species capable of chemically reacting with a compound for film formation and introducing into a film-forming space having the substrate, the activated species and the compound for film formation. The compound for film formation has the general formula R.sub.n M.sub.m wherein R is a hydrocarbon radical, M is an element selected from one of Groups II-IV, n is an integer equal to the valence of M and m is a positive integer equal to the valence of R. The film-forming space is remote from the activation space. The activated species initiates a chemical reaction with the compound for film formation sufficient to generate chemical species of said film-forming compound capable of directly forming the deposited film.

Abstract: A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with discharge energy and allowing both the species to react with each other thereby to form a deposited film on the substrate.

Abstract: A process for forming a deposited film according to chemical vapor deposition on a substrate comprises the first step of forming an amorphous film by reacting an excited species (AY) containing an atom (A) which becomes the constituent constituting said deposited film and an atom (Y) with high electronegativity with an active species (Z) which is chemically reactive with said excited species (AY) at a first ratio and the second step of forming a polycrystalline film by reacting said excited species (AY) with said active species (Z) at a second ratio which is different from said first ratio.

Abstract: A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with heat energy and thereby allowing both the species to react with each other thereby to form a deposited film on the substrate.

Abstract: Process for preparing a functional film deposited on a substrate having practically applicable characteristics which is usable as a photoconductive member in semiconductor device, image input line sensor, image pickup device on the like by generating an active species by subjecting a gaseous substance capable of being activated to generate said active species to the action of activating energy in an active species generating and transporting space leading to a film forming space containing the substrate;simultaneously generating a precursor by subjecting a gaseous substance capable of generating said precursor to the action of activating energy in a precursor generating and transporting space located separately from and within the active species generating and transporting space and open in a downstream region of that space; andintroducing the resulting active species and precursor into the film forming space to chemically react to form the functional deposited film on the substrate in the absence of plasma.

Abstract: A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with discharge energy and thereby allowing both the species to react with each other thereby to form a deposited film on the substrate.

Abstract: An apparatus for the preparation of a photoelectric conversion layer for a photoelectromotive force member includes:(a) a film-forming chamber having an inner space in which a substrate holder for a substrate is provided;(b) an exhaust pipe connected to the film-forming chamber and through a main valve to an exhaust pump;(c) a concentric triplicate conduit connected through a nozzle to the film-forming chamber.

Abstract: A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and halogen and an active species (B) formed from a chemical substance for film formation which is chemically mutually reactive with said active species (A) separately from each other, then providing them with heat energy and thereby allowing both the species to react chemically with each other to form a deposited film on the substrate.

Abstract: A process for forming a deposited film, which comprises introducing into a film forming space for formation of a deposited film on a substrate an active species (A) formed by decomposition of a compound containing silicon and a halogen and an active species (B) formed from a germanium containing compound for film formation which is chemically mutually reactive with said active species (A) separately from each other, and then permitting the above respective active species and said germanium containing compounds to react chemically with each other by excitation by irradiation of light energy thereby to form a deposited film on the above substrate.

Abstract: A process for forming a deposited film, which comprises introducing, into a film forming space for forming said deposited film on a substrate, compounds A-1 and B-1 respectively represented by following general formulae and employed as raw materials for said deposited film:R.sub.n M.sup.1.sub.m (A-1)A.sup.1.sub.a B.sub.b (B-1)and active species capable of effecting a chemical reaction with at least one of said compounds, thereby forming a deposited film on said substrate, wherein m is a positive integer equal to the valence of R or a multiple thereof, n is a positive integer equal to the valence of M.sup.1 or a multiple thereof, M.sup.1 stands for an element of the group III of the periodic table, R stands for a hydrogen atom (H), a halogen atom (X) or a hydrocarbon group, a is a positive integer equal to the valence of B or a multiple thereof, b is a positive integer equal to the valence of A.sup.1 or a multiple thereof, A.sup.