Abstract: A semiconductor integrated circuit device, includes a first electrode including a first semiconductor layer formed on a substrate, a side surface insulating film formed on at least a part of a side surface of the first electrode, an upper surface insulating film formed on the first electrode and the side surface insulating film, a second electrode which covers the side surface insulating film and the upper surface insulating film, and a fin-type field effect transistor. The first electrode, the side surface insulating film, and the second electrode constitute a capacitor element. A thickness of the upper surface insulating film between the first electrode and the second electrode is larger than a thickness of the side surface insulating film between the first electrode and the second electrode, and the fin-type field effect transistor includes a second semiconductor layer which protrudes with respect to the plane of the substrate.

Abstract: A semiconductor integrated circuit device, includes a first electrode including a first semiconductor layer formed on a substrate, a side surface insulating film formed on at least a part of a side surface of the first electrode, an upper surface insulating film formed on the first electrode and the side surface insulating film, a second electrode which covers the side surface insulating film and the upper surface insulating film, and a fin-type field effect transistor. The first electrode, the side surface insulating film, and the second electrode constitute a capacitor element. A thickness of the upper surface insulating film between the first electrode and the second electrode is larger than a thickness of the side surface insulating film between the first electrode and the second electrode, and the fin-type field effect transistor includes a second semiconductor layer which protrudes with respect to the plane of the substrate.

Abstract: Provided is a destructive readout semiconductor memory device capable of avoiding concentration of a writeback current, in which a switch circuit (24) is provided between each bit line (21) and each sense amplifier (26). In writeback, the switch circuits are turned on at staggered time points. In readout, the switch circuits are turned on to read memory cell data to the sense amplifiers while the sense amplifiers are turned off, and the switch circuits are then turned off once. After that, the sense amplifiers are turned on to amplify the read data. The switch circuits are subsequently divided into groups and turned on again to write back the data amplified by the sense amplifiers to the memory cells. The switch circuits are divided into groups to be turned on at staggered time points during the writeback, to thereby avoid concentration of the writeback current in one time period.

Abstract: Provided is a semiconductor integrated circuit device including a capacitor element with an improved TDDB life. A semiconductor integrated circuit device (1) includes: a first electrode (4) including a first semiconductor layer which protrudes with respect to a plane of a substrate; a side surface insulating film (5) formed on at least a part of a side surface of the first electrode (4); an upper surface insulating film (6) formed on the first electrode (4) and the side surface insulating film (5); and a second electrode (7) which covers the side surface insulating film (5) and the upper surface insulating film (6). The first electrode (4), the side surface insulating film (5), and the second electrode (7) constitute a capacitor element. A thickness of the upper surface insulating film (6) between the first electrode (4) and the second electrode (7) is larger than a thickness of the side surface insulating film (5) between the first electrode (4) and the second electrode (7).

Abstract: Provided is a destructive readout semiconductor memory device capable of avoiding concentration of a writeback current, in which a switch circuit (24) is provided between each bit line (21) and each sense amplifier (26). In writeback, the switch circuits are turned on at staggered time points. In readout, the switch circuits are turned on to read memory cell data to the sense amplifiers while the sense amplifiers are turned off, and the switch circuits are then turned off once. After that, the sense amplifiers are turned on to amplify the read data. The switch circuits are subsequently divided into groups and turned on again to write back the data amplified by the sense amplifiers to the memory cells. The switch circuits are divided into groups to be turned on at staggered time points during the writeback, to thereby avoid concentration of the writeback current in one time period.