Patents by Inventor Shunsuke Andoh

Shunsuke Andoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Voltage generating circuit and reference voltage source circuit employing field effect transistors
    Patent number: 6882135
    Abstract: A voltage generating circuit includes a plurality of field effect transistors at least partially having gates same in conductivity type but different in impurity concentration. The gates are different in impurity concentration by not less than one digit.
    Type: Grant
    Filed: June 5, 2003
    Date of Patent: April 19, 2005
    Assignee: Ricoh Company, Ltd.
    Inventors: Shunsuke Andoh, Hirofumi Watanabe
  • Voltage generating circuit and reference voltage source circuit employing field effect transistors
    Publication number: 20030205993
    Abstract: A voltage generating circuit includes a plurality of field effect transistors at least partially having gates same in conductivity type but different in impurity concentration. The gates are different in impurity concentration by not less than one digit.
    Type: Application
    Filed: June 5, 2003
    Publication date: November 6, 2003
    Inventors: Shunsuke Andoh, Hirofumi Watanabe
  • Voltage generating circuit and reference voltage source circuit employing field effect transistors
    Patent number: 6600305
    Abstract: A voltage generating circuit includes a plurality of field effect transistors at least partially having gates same in conductivity type but different in impurity concentration. The gates are different in impurity concentration by not less than one digit.
    Type: Grant
    Filed: June 26, 2002
    Date of Patent: July 29, 2003
    Assignee: Ricoh Company, Ltd.
    Inventors: Shunsuke Andoh, Hirofumi Watanabe
  • Voltage generating circuit and reference voltage source circuit employing field effect transistors
    Publication number: 20020175664
    Abstract: A voltage generating circuit includes a plurality of field effect transistors at least partially having gates same in conductivity type but different in impurity concentration. The gates are different in impurity concentration by not less than one digit.
    Type: Application
    Filed: June 26, 2002
    Publication date: November 28, 2002
    Inventors: Shunsuke Andoh, Hirofumi Watanabe
  • Voltage generating circuit and reference voltage source circuit employing field effect transistors
    Patent number: 6437550
    Abstract: A voltage generating circuit includes a plurality of field effect transistors at least partially having gates same in conductivity type but different in impurity concentration. The gates are different in impurity concentration by not less than one digit.
    Type: Grant
    Filed: December 27, 2000
    Date of Patent: August 20, 2002
    Assignee: Ricoh Company, Ltd.
    Inventors: Shunsuke Andoh, Hirofumi Watanabe
  • Voltage generating circuit and reference voltage source circuit employing field effect transistors
    Publication number: 20010020844
    Abstract: A voltage generating circuit includes a plurality of field effect transistors at least partially having gates same in conductivity type but different in impurity concentration. The gates are different in impurity concentration by not less than one digit.
    Type: Application
    Filed: December 27, 2000
    Publication date: September 13, 2001
    Inventors: Shunsuke Andoh, Hirofumi Watanabe