Patents by Inventor Shunsuke Isono
Shunsuke Isono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240125515Abstract: The purpose of the present invention is to provide a control device, a heat source system, a control method, and a control program with which a heat medium at a required temperature can be more effectively sent out. This control device, which is applied to a heat source system 1 comprising a plurality of heat source machines (2a), (2b) connected in series, comprises a setting unit which sets the outlet setting temperatures of cool water in the respective heat source machines (2a), (2b) on the basis of: a measured value of a cool water flow rate, measured values of inlet temperatures of the cool water in the respective heat source machines (2a), (2b); and the required outlet temperature of the cool water in the heat source system (1).Type: ApplicationFiled: November 25, 2021Publication date: April 18, 2024Applicant: MITSUBISHI HEAVY INDUSTRIES THERMAL SYSTEMS, LTD.Inventors: Shunsuke ISONO, Yutaka TAKENAKA, Satoshi NIKAIDO, Katsuya SAKAGUCHI, Linri CUI
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Publication number: 20230232644Abstract: An imaging device includes a photoelectric conversion film and an electrode. The photoelectric conversion film converts light to charge. The electrode collects the charge. The electrode includes two or more layers. The two or more layers include a first layer containing tantalum nitride. An uppermost layer among the two or more layers contains a metal nitride.Type: ApplicationFiled: March 13, 2023Publication date: July 20, 2023Inventors: SHUNSUKE ISONO, YUUKO TOMEKAWA, RYOTA SAKAIDA
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Patent number: 11637147Abstract: An imaging device including: a semiconductor substrate including a pixel region and a peripheral region; an insulating layer that covers the pixel and peripheral regions; first electrodes located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrodes; a second electrode that covers the photoelectric conversion layer; detection circuitry configured to be electrically connected to the first electrodes; peripheral circuitry configured to be electrically connected to the detection circuitry, and including analog circuitry; and a third electrode electrically connected to the second electrode.Type: GrantFiled: August 4, 2021Date of Patent: April 25, 2023Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Shunsuke Isono, Hidenari Kanehara, Sanshiro Shishido, Takeyoshi Tokuhara
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Patent number: 11570383Abstract: An imaging device includes: pixels that are disposed in a row direction and a column direction and that include a first pixel and a second pixel adjacent to the first pixel along the row direction; a shield electrode located between the first pixel and the second pixel; a first shield via that extends from the shield electrode. The first pixel includes: a first photoelectric conversion layer that converts incident light to generate charge; and a first pixel electrode that collects the charge generated thereby. The second pixel includes: a second photoelectric conversion layer that converts incident light to generate charge; and a second pixel electrode that collects the charge generated thereby. The shield electrode is electrically isolated from the first pixel electrode and the second pixel electrode, and the first shield via is located between the first pixel electrode and the second pixel electrode in a plan view.Type: GrantFiled: March 26, 2021Date of Patent: January 31, 2023Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Shunsuke Isono, Tatsunori Momose, Ryota Sakaida
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Patent number: 11233209Abstract: An imaging device including a semiconductor substrate having a pixel region where pixels are arranged and a peripheral region adjacent to the pixel region; an insulating layer that covers the pixel region and the peripheral region; a first electrode that is located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrode; and a first layer that covers the photoelectric conversion layer, the first layer being located above the pixel region and the peripheral region. The thickness of the first layer above the peripheral region is larger than a thickness of the first layer above the pixel region, and a level of an uppermost surface of the first layer above the peripheral region is higher than a level of an uppermost surface of the first layer above the pixel region.Type: GrantFiled: July 30, 2020Date of Patent: January 25, 2022Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Shunsuke Isono, Akio Nakajun
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Publication number: 20210366992Abstract: An imaging device including: a semiconductor substrate including a pixel region and a peripheral region; an insulating layer that covers the pixel and peripheral regions; first electrodes located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrodes; a second electrode that covers the photoelectric conversion layer; detection circuitry configured to be electrically connected to the first electrodes; peripheral circuitry configured to be electrically connected to the detection circuitry, and including analog circuitry; and a third electrode electrically connected to the second electrode.Type: ApplicationFiled: August 4, 2021Publication date: November 25, 2021Applicants: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD., PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Shunsuke ISONO, Hidenari KANEHARA, Sanshiro SHISHIDO, Takeyoshi TOKUHARA
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Patent number: 11114505Abstract: An imaging device including a semiconductor substrate including a pixel region and a peripheral region; an insulating layer covering the pixel and peripheral regions; first electrodes located on the insulating layer above the pixel region; a photoelectric conversion layer covering the first electrodes; a second electrode that covers the photoelectric conversion layer; detection circuitry electrically connected to the first electrodes; peripheral circuitry electrically connected to the detection circuitry, and; and a third electrode located on the insulating layer.Type: GrantFiled: October 23, 2020Date of Patent: September 7, 2021Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Shunsuke Isono, Hidenari Kanehara, Sanshiro Shishido, Takeyoshi Tokuhara
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Publication number: 20210218912Abstract: An imaging device includes: pixels that are disposed in a row direction and a column direction and that include a first pixel and a second pixel adjacent to the first pixel along the row direction; a shield electrode located between the first pixel and the second pixel; a first shield via that extends from the shield electrode. The first pixel includes: a first photoelectric conversion layer that converts incident light to generate charge; and a first pixel electrode that collects the charge generated thereby. The second pixel includes: a second photoelectric conversion layer that converts incident light to generate charge; and a second pixel electrode that collects the charge generated thereby. The shield electrode is electrically isolated from the first pixel electrode and the second pixel electrode, and the first shield via is located between the first pixel electrode and the second pixel electrode in a plan view.Type: ApplicationFiled: March 26, 2021Publication date: July 15, 2021Inventors: SHUNSUKE ISONO, TATSUNORI MOMOSE, RYOTA SAKAIDA
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Publication number: 20210043688Abstract: An imaging device including a semiconductor substrate including a pixel region and a peripheral region; an insulating layer covering the pixel and peripheral regions; first electrodes located on the insulating layer above the pixel region; a photoelectric conversion layer covering the first electrodes; a second electrode that covers the photoelectric conversion layer; detection circuitry electrically connected to the first electrodes; peripheral circuitry electrically connected to the detection circuitry, and; and a third electrode located on the insulating layer.Type: ApplicationFiled: October 23, 2020Publication date: February 11, 2021Inventors: Shunsuke ISONO, Hidenari KANEHARA, Sanshiro SHISHIDO, Takeyoshi TOKUHARA
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Publication number: 20210013253Abstract: An electronic device includes: a capacitor; an insulating layer; at feast one trench provided in the insulating layer; and a first conductive plug, at least part of which is surrounded by the insulating layer. The capacitor includes: a first lower electrode provided along an inner wall of the at least one trench, a dielectric layer provided on the first lower electrode, and an upper electrode provided on the dielectric layer. At least part of the first conductive plug is positioned between an upper surface of the insulating layer and a lowermost portion of the at least one trench.Type: ApplicationFiled: September 22, 2020Publication date: January 14, 2021Inventors: MASAYUKI TAKASE, SHUNSUKE ISONO, YUUKO TOMEKAWA
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Patent number: 10879284Abstract: An imaging device includes a pixel, the pixel including a photoelectric converter which converts light into a signal charge and a charge detection circuit which detects the signal charge. The photoelectric converter includes a photoelectric conversion layer having a first surface and a second surface opposite to the first surface, a pixel electrode on the first surface, a first electrode adjacent to the pixel electrode on the first surface, the first electrode being electrically conductive to the photoelectric conversion layer, and a counter electrode on the second surface, the counter electrode facing the pixel electrode and the first electrode. A shortest distance between the pixel electrode and the first electrode in a plan view is smaller than a shortest distance between the pixel electrode and the first electrode.Type: GrantFiled: May 29, 2018Date of Patent: December 29, 2020Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Akio Nakajun, Sanshiro Shishido, Shunsuke Isono
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Patent number: 10854678Abstract: An imaging device includes: a semiconductor substrate including a pixel region in which pixels are arranged and a peripheral region adjacent to the pixel region; an insulating layer that covers the pixel region and the peripheral region; a first electrode located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrode; a second electrode that covers the photoelectric conversion layer; detection circuitry located in the pixel region and connected to the first electrode; peripheral circuitry located in the peripheral region and connected to the detection circuitry; and a third electrode located on the insulating layer above the peripheral region. The second electrode extends above the peripheral region, and the second electrode includes a connection region in which the second electrode is connected to the third electrode, the connection region overlapping the peripheral circuitry in plan view.Type: GrantFiled: January 18, 2019Date of Patent: December 1, 2020Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Shunsuke Isono, Hidenari Kanehara, Sanshiro Shishido, Takeyoshi Tokuhara
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Publication number: 20200358016Abstract: An imaging device including a semiconductor substrate having a pixel region where pixels are arranged and a peripheral region adjacent to the pixel region; an insulating layer that covers the pixel region and the peripheral region; a first electrode that is located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrode; and a first layer that covers the photoelectric conversion layer, the first layer being located above the pixel region and the peripheral region. The thickness of the first layer above the peripheral region is larger than a thickness of the first layer above the pixel region, and a level of an uppermost surface of the first layer above the peripheral region is higher than a level of an uppermost surface of the first layer above the pixel region.Type: ApplicationFiled: July 30, 2020Publication date: November 12, 2020Inventors: Shunsuke Isono, Akio Nakajun
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Patent number: 10756281Abstract: An imaging device includes a semiconductor substrate that includes a pixel region where pixels are arranged and a peripheral region adjacent to the pixel region; an insulating layer that covers the pixel region and the peripheral region; a first electrode that is located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrode; a second electrode that covers the photoelectric conversion layer; and a first layer that covers the second electrode, the first layer being located above the pixel region and the peripheral region. A thickness of the first layer above the peripheral region is larger than a thickness of the first layer above the pixel region. A level of an uppermost surface of the first layer above the peripheral region is higher than a level of an uppermost surface of the first layer above the pixel region.Type: GrantFiled: January 15, 2019Date of Patent: August 25, 2020Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Shunsuke Isono, Akio Nakajun
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Publication number: 20190237691Abstract: An imaging device includes a semiconductor substrate that includes a pixel region where pixels are arranged and a peripheral region adjacent to the pixel region; an insulating layer that covers the pixel region and the peripheral region; a first electrode that is located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrode; a second electrode that covers the photoelectric conversion layer; and a first layer that covers the second electrode, the first layer being located above the pixel region and the peripheral region. A thickness of the first layer above the peripheral region is larger than a thickness of the first layer above the pixel region. A level of an uppermost surface of the first layer above the peripheral region is higher than a level of an uppermost surface of the first layer above the pixel region.Type: ApplicationFiled: January 15, 2019Publication date: August 1, 2019Inventors: SHUNSUKE ISONO, AKIO NAKAJUN
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Publication number: 20190229150Abstract: An imaging device includes: a semiconductor substrate including a pixel region in which pixels are arranged and a peripheral region adjacent to the pixel region; an insulating layer that covers the pixel region and the peripheral region; a first electrode located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrode; a second electrode that covers the photoelectric conversion layer; detection circuitry located in the pixel region and connected to the first electrode; peripheral circuitry located in the peripheral region and connected to the detection circuitry; and a third electrode located on the insulating layer above the peripheral region. The second electrode extends above the peripheral region, and the second electrode includes a connection region in which the second electrode is connected to the third electrode, the connection region overlapping the peripheral circuitry in plan view.Type: ApplicationFiled: January 18, 2019Publication date: July 25, 2019Inventors: SHUNSUKE ISONO, HIDENARI KANEHARA, SANSHIRO SHISHIDO, TAKEYOSHI TOKUHARA
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Publication number: 20180350862Abstract: An imaging device includes a pixel, the pixel including a photoelectric converter which converts light into a signal charge and a charge detection circuit which detects the signal charge. The photoelectric converter includes a photoelectric conversion layer having a first surface and a second surface opposite to the first surface, a pixel electrode on the first surface, a first electrode adjacent to the pixel electrode on the first surface, the first electrode being electrically conductive to the photoelectric conversion layer, and a counter electrode on the second surface, the counter electrode facing the pixel electrode and the first electrode. A shortest distance between the pixel electrode and the first electrode in a plan view is smaller than a shortest distance between the pixel electrode and the first electrode.Type: ApplicationFiled: May 29, 2018Publication date: December 6, 2018Inventors: AKIO NAKAJUN, SANSHIRO SHISHIDO, SHUNSUKE ISONO
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Patent number: 9300891Abstract: A solid-state imaging device according to the present disclosure includes: a pixel region which includes: pixel plugs formed above and electrically connected to a charge accumulation and diffusion layer, the pixel plugs respectively corresponding to pixels; lower pixel electrodes formed on and electrically connected to the pixel plugs, respectively, the lower pixel electrodes respectively corresponding to the pixels; an organic photoelectric conversion film formed on and electrically connected to the lower pixel electrodes; and an upper pixel electrode formed on and electrically connected to the organic photoelectric conversion film, and in which top surfaces of a global interconnect, a light shielding film, and a first AI pad formed in an uppermost layer of a multilayer interconnect structure disposed in a peripheral region is above a bottom surface of the organic photoelectric conversion film, the peripheral region being peripheral to the pixel region.Type: GrantFiled: September 16, 2014Date of Patent: March 29, 2016Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Shunsuke Isono, Tetsuya Ueda, Tetsuo Satake, Takashi Hyakushima, Kenji Taki
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Patent number: 9184316Abstract: An insulating layer is layered above a substrate, and a plurality of pixel electrodes are formed above the insulating layer in a matrix with intervals therebetween. A photoelectric conversion layer and an opposing electrode are formed in respective order above the pixel electrodes. A dummy layer is formed above the insulating layer in a region that in plan-view is more peripheral than a pixel region in which the pixel electrodes are formed. The dummy layer is formed from the same material as the pixel electrodes. The dummy layer is composed of a plurality of dummy layer portions that are each equal to each of the pixel electrodes in terms of size in plan-view. The dummy layer functions as a support layer for planarization during polishing by chemical mechanical polishing.Type: GrantFiled: January 17, 2014Date of Patent: November 10, 2015Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Shunsuke Isono, Tetsuya Ueda
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Publication number: 20150002719Abstract: A solid-state imaging device according to the present disclosure includes: a pixel region which includes: pixel plugs formed above and electrically connected to a charge accumulation and diffusion layer, the pixel plugs respectively corresponding to pixels; lower pixel electrodes formed on and electrically connected to the pixel plugs, respectively, the lower pixel electrodes respectively corresponding to the pixels; an organic photoelectric conversion film formed on and electrically connected to the lower pixel electrodes; and an upper pixel electrode formed on and electrically connected to the organic photoelectric conversion film, and in which top surfaces of a global interconnect, a light shielding film, and a first AI pad formed in an uppermost layer of a multilayer interconnect structure disposed in a peripheral region is above a bottom surface of the organic photoelectric conversion film, the peripheral region being peripheral to the pixel region.Type: ApplicationFiled: September 16, 2014Publication date: January 1, 2015Inventors: Shunsuke ISONO, Tetsuya UEDA, Tetsuo SATAKE, Takashi HYAKUSHIMA, Kenji TAKI