Abstract: Provided is a galvanized steel sheet having a TS of 980 MPa or more, high YS, excellent ductility, strain hardenability, and hole expansion formability. A base steel sheet has a defined chemical composition and a steel microstructure as follows: area ratio of ferrite: 65.0% or less (including 0%), area ratio of bainitic ferrite: 5.0% or more and 40.0% or less, area ratio of tempered martensite: 0.5% or more and 80.0% or less, area ratio of retained austenite: 3.0% or more, area ratio of fresh martensite: 20.0% or less (including 0%), SBF+STM+2×SMA: 65.0% or more, SMA1/SMA: 0.80 or less, and SMA2/SMA: 0.20 or more.

Abstract: Disclosed is an Fe-based electroplated steel sheet including: a Si-containing cold-rolled steel sheet containing Si in an amount of 0.1 mass % or more and 3.0 mass % or less; and an Fe-based electroplating layer formed on at least one surface of the Si-containing cold-rolled steel sheet with a coating weight per surface of 5.0 g/m2 or more, in which in an intensity profile measured by glow discharge optical emission spectrometry, a peak of emission intensity at wavelengths indicating Si is detected within a range from a surface of the Fe-based electroplating layer to more than 0.2 ?m in a thickness direction and not more than a thickness of the Fe-based electroplating layer, and an average value of C concentration in a region ranging from 10 ?m to 20 ?m in the thickness direction from the surface of the Fe-based electroplating layer is 0.10 mass % or less.

Abstract: A plasma processing method which performs plasma processing on a sample by a plurality of steps includes a first step of stopping supply of gas of one step while supplying an inert gas and a second step stopping the supply of the inert gas of the first step while as supplying a gas of the other step after the first step. An amount of the gas of the one step remaining inside a process chamber in which the sample is plasma-processed is detected in the first step. An amount of the gas of the other step reached inside the process chamber is detected in the second step. The one step is switched to the other step based on the amount of the gas of the one step detected in the first step and the amount of the gas of the other step detected in the second step.

Abstract: A plasma processing method which performs plasma processing on a sample by a plurality of steps includes a first step of stopping supply of gas of one step while supplying an inert gas and a second step stopping the supply of the inert gas of the first step while as supplying a gas of the other step after the first step. An amount of the gas of the one step remaining inside a process chamber in which the sample is plasma-processed is detected in the first step. An amount of the gas of the other step reached inside the process chamber is detected in the second step. The one step is switched to the other step based on the amount of the gas of the one step detected in the first step and the amount of the gas of the other step detected in the second step.

Abstract: A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse.

Abstract: In a plasma processing apparatus having a plasma processing chamber for applying plasma processing to a sample, a first radio frequency power supply for supplying first radio frequency power for generation of a plasma, a sample stage for mounting the sample thereon, a second radio frequency power supply for supplying second radio frequency power to the sample stage, and a pulse-generating unit for sending to the first radio frequency power supply a first pulse for time modulation of the first radio frequency power and for sending to the second radio frequency power supply a second pulse for time modulation of the second radio frequency power, the pulse-generating unit includes a phase control waveform generation unit for generating a phase modulation-use waveform for modulating the phase of ON period of the second pulse and modulates by the phase modulation-use waveform the phase of ON period of the second pulse.

Abstract: A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse.

Abstract: A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse.

Abstract: A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse.