Patents by Inventor Shunsuke KIYOMURA

Shunsuke KIYOMURA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8772712
    Abstract: A compound contained in a sample is analyzed more accurately. Provided is an analysis method using TOF-SIMS in which first spectral data is obtained by irradiating the sample with a first primary ion, second spectral data is obtained by irradiating the sample with a second primary ion, and a surface of the sample is etched by an ion and then the surface of the sample is irradiated with the first primary ion or the second primary ion. The first primary ion is more likely to break a molecular structure of a molecule contained in the sample than the second primary ion.
    Type: Grant
    Filed: April 16, 2013
    Date of Patent: July 8, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hajime Kimura, Shunsuke Kiyomura
  • Publication number: 20130277549
    Abstract: A compound contained in a sample is analyzed more accurately. Provided is an analysis method using TOF-SIMS in which first spectral data is obtained by irradiating the sample with a first primary ion, second spectral data is obtained by irradiating the sample with a second primary ion, and a surface of the sample is etched by an ion and then the surface of the sample is irradiated with the first primary ion or the second primary ion. The first primary ion is more likely to break a molecular structure of a molecule contained in the sample than the second primary ion.
    Type: Application
    Filed: April 16, 2013
    Publication date: October 24, 2013
    Applicant: Semiconductor Energy Laboratory Co., Ltd
    Inventors: Hajime KIMURA, Shunsuke KIYOMURA