Abstract: A semiconductor laser apparatus is provided. The semiconductor laser apparatus includes a mode-locked semiconductor laser device and an external resonator including a dispersion compensation system, wherein the semiconductor laser apparatus is configured to generate self modulation, to introduce a negative group velocity dispersion into the external resonator, and to provide spectral filtering after the external resonator.

Abstract: Provided is a light-emitting device including (a) a layer structure obtained by sequentially growing on a base substrate a first compound semiconductor layer of a first conductivity type, (b) an active layer formed of a compound semiconductor, and (c) a second compound semiconductor layer of a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The layer structure formed of at least a part of the second compound semiconductor layer in a thickness direction of the second compound semiconductor layer. The first compound semiconductor layer has a thickness greater than 0.6 ?m. A high-refractive index layer formed of a compound semiconductor material having a refractive index higher than a refractive index of a compound semiconductor material of the first compound semiconductor layer is formed in the first compound semiconductor layer.

Abstract: A laser diode assembly includes: a mode-locked laser diode device; a diffraction grating that configures an external resonator, returns primary or more order diffracted light to the mode-locked laser diode device, and outputs 0-order diffracted light outside; and an imaging section provided between the mode-locked laser diode device and the diffraction grating and imaging an image of a light output end face of the mode-locked laser diode device on the diffraction grating.

Abstract: Disclosed is a dispersion compensation optical apparatus including a first transmission type volume hologram diffraction grating and a second transmission type volume hologram diffraction grating. The first and second transmission type volume hologram diffraction gratings are arranged facing each other. A sum of an incident angle of laser light and an emitting angle of first-order diffracted light is 90° in each of the first and second transmission type volume hologram diffraction gratings.

Abstract: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.

Abstract: Provided is a light-emitting device including (a) a layer structure obtained by sequentially growing on a base substrate a first compound semiconductor layer of a first conductivity type, (b) an active layer formed of a compound semiconductor, and (c) a second compound semiconductor layer of a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The layer structure formed of at least a part of the second compound semiconductor layer in a thickness direction of the second compound semiconductor layer. The first compound semiconductor layer has a thickness greater than 0.6 ?m. A high-refractive index layer formed of a compound semiconductor material having a refractive index higher than a refractive index of a compound semiconductor material of the first compound semiconductor layer is formed in the first compound semiconductor layer.

Abstract: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.

Abstract: A laser diode assembly includes a mode-locked laser diode device, where a light output spectrum shows long-wavelength shift by self-phase modulation, an external resonator, and a wavelength selective element. A long wavelength component of a pulsed laser beam emitted through the external resonator from the mode-locked laser diode device is extracted by the wavelength selective element, and output to the outside.

Abstract: A laser diode assembly includes: a mode-locked laser diode device; a diffraction grating that configures an external resonator, returns primary or more order diffracted light to the mode-locked laser diode device, and outputs 0-order diffracted light outside; and an imaging section provided between the mode-locked laser diode device and the diffraction grating and imaging an image of a light output end face of the mode-locked laser diode device on the diffraction grating.

Abstract: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration. The laser diode can be driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.

Abstract: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.

Abstract: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.

Abstract: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.

Abstract: A method of driving an ultrashort pulse and ultrahigh power laser diode device having a simple composition and a simple structure is provided. In the method of driving a laser diode device, light is injected from a light injection means into a laser diode device driven by a pulse current having a value 10 or more times as large as a value of a threshold current.

Abstract: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration. The laser diode can be driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.

Abstract: A method of driving an ultrashort pulse and ultrahigh power laser diode device having a simple composition and a simple structure is provided. In the method of driving a laser diode device, light is injected from a light injection means into a laser diode device driven by a pulse current having a value 10 or more times as large as a value of a threshold current.

Abstract: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.