Abstract: A heat pump apparatus includes: a compression mechanism that compresses a refrigerant; a motor that drives the compression mechanism; an inverter that applies a voltage to the motor; and an inverter control unit that generates a drive signal for driving the inverter, based on a carrier signal, in which the inverter control unit periodically changes a carrier frequency of the carrier signal in a heating operation mode in which the refrigerant is heated, and generates the drive signal such that a period of time during which a voltage represented as a real vector is applied to the motor is kept constant regardless of the changed carrier frequency.

Abstract: A power conversion device includes a single-phase full-wave rectifying unit, an electrolytic capacitor, a plurality of chopper circuits that are arranged between the single-phase full-wave rectifying unit and the electrolytic capacitor, each of the chopper circuits including a reactor, a first MOSFET connected in parallel with the single-phase full-wave rectifying unit, and a second MOSFET connected to a positive terminal of the electrolytic capacitor at one end and to the reactor and the first MOSFET at the other end, a first current detecting unit to bidirectionally detect a current flowing through the reactor, and a control unit to control an operation of the first MOSFET by using the detection result from the first current detecting unit.

Abstract: A power conversion device includes a single-phase full-wave rectifying unit, an electrolytic capacitor, a plurality of chopper circuits that are arranged between the single-phase full-wave rectifying unit and the electrolytic capacitor, each of the chopper circuits including a reactor, a first MOSFET connected in parallel with the single-phase full-wave rectifying unit, and a second MOSFET connected to a positive terminal of the electrolytic capacitor at one end and to the reactor and the first MOSFET at the other end, a first current detecting unit to bidirectionally detect a current flowing through the reactor, and a control unit to control an operation of the first MOSFET by using the detection result from the first current detecting unit.

Abstract: An electronic circuit includes a first level shift circuit, a second level shift circuit, an internal circuit, a high voltage circuit, first and second transistors, and first and second protective circuits. The first and second protective circuits perform control the first and second transistors so as to make them non-conductive when at least one of a plurality of types of power supply voltages becomes equal to or less than a predetermined value.

Abstract: An electronic circuit includes a first level shift circuit, a second level shift circuit, an internal circuit, a high voltage circuit, first and second transistors, and first and second protective circuits. The first and second protective circuits perform control the first and second transistors so as to make them non-conductive when at least one of a plurality of types of power supply voltages becomes equal to or less than a predetermined value.

Abstract: A semiconductor integrated circuit device that has a high-voltage analog switch circuit and is operable at a low power-supply voltage, and which has a first high-voltage MOSFET HN1, a second high-voltage MOSFET, and a first floating gate voltage control circuit. The first floating gate voltage control circuit operates at a voltage of 5 V or lower, and when turning on the first high-voltage MOSFET and the second high-voltage MOSFET, the first floating gate voltage control circuit sets a voltage in the source terminal of the first high-voltage MOSFET as a reference voltage, adds a floating voltage corresponding to the power-supply voltage to the reference voltage, and supplies the added voltage to the gate terminals of the first high-voltage MOSFET and the second high-voltage MOSFET.

Abstract: Provided is a switching circuit capable of transmitting a signal with large amplitude and large current while suppressing deterioration when a small-amplitude signal is transmitted. The switching circuit 100 includes a first terminal a, a second terminal b, a first switch 1, a second switch 2, a first separation switch 3a, and a second separation switch 3b. The first switch 1 connects the first terminal a and the second terminal b according to a control signal. The second switch 2 has a first node n1 and a second node n2, and connects between the nodes in synchronization with the first switch 1. The first separation switch 3a transmits a signal of the first node n1 to the second node n2 when an electric potential of the first node n1 is higher than that of the second node n2 by more than a predetermined electric potential.

Abstract: Provided is a semiconductor integrated circuit device that has a high-voltage analog switch circuit and is operable at a low power-supply voltage. The semiconductor integrated circuit device has a high-voltage MOSFET in a semiconductor region arranged on a semiconductor substrate. The semiconductor integrated circuit device includes: a first high-voltage MOSFET HN1; a second high-voltage MOSFET HN2 having a source terminal connected to the source terminal of the first high-voltage MOSFET and a gate terminal connected to the gate terminal of the first high-voltage MOSFET; and a first floating gate voltage control circuit FGC.

Abstract: Provided is a switching circuit capable of transmitting a signal with large amplitude and large current while suppressing deterioration when a small-amplitude signal is transmitted. The switching circuit 100 includes a first terminal a, a second terminal b, a first switch 1, a second switch 2, a first separation switch 3a, and a second separation switch 3b. The first switch 1 connects the first terminal a and the second terminal b according to a control signal. The second switch 2 has a first node n1 and a second node n2, and connects between the nodes in synchronization with the first switch 1. The first separation switch 3a transmits a signal of the first node n1 to the second node n2 when an electric potential of the first node n1 is higher than that of the second node n2 by more than a predetermined electric potential.

Abstract: A biaxially oriented polyester film to be laminated on a metal plate and molded, which comprises an aromatic polyester composition comprising: (A) an aromatic polyester which comprises ethylene terephthalate as the main recurring unit and a titanium compound and a phosphorus compound both of which satisfy at least one of the following expressions (1) and (2): 0.1≦Ti/P≦3.0  (1) 5≦Ti+P≦60  (2) wherein Ti is the amount (mmol %) of elemental titanium of the titanium compound contained in this aromatic polyester and P is the amount (mmol %) of elemental phosphorus of the phosphorus compound contained in the aromatic polyester, and the following expression (3): 2≦Ti≦20  (3) wherein Ti is as defined hereinabove, and which contains alkali metal compounds, germanium compound and antimony compound in a total amount of not more than 3 ppm in terms of the total of elemental alkali metals, elemental germanium and elemental antimony; and (B) 0.05 to 5.

Abstract: An apparatus for detecting an operating condition of an internal-combustion engine, particularly a knocking condition of a four stroke cycle gasoline engine including a black body light radiating member formed by an opaque film of a noble metal, a sapphire rod which is arranged to be inserted into a hole formed in an engine head block, the black body light radiating member being arranged on one end of the sapphire rod such that the black body light radiating member is positioned within a combustion chamber, an optical fiber having one end optically coupled with the other end of the sapphire rod, a light detector arranged to receive light emanating from the other end of the optical fiber to produce a temperature signal which represents the heat flux within the combustion chamber, and a signal processing circuit for processing the temperature signal to detect the operating condition of the engine.