Abstract: The present invention aims to provide a method for producing a solar cell in which a continuous long scribed line is provided along the machine direction of a substrate so that failures due to breakage of the scribed line are reduced.

Abstract: The present invention is a method for forming a porous film of an inorganic substance on a base material by spraying fine particles of an inorganic substance on the base material such that the fine particles are bonded to the base material and bonded to one another, in which the fine particles include at least two kinds of fine particles which are small-size particles and large-size particles having different average particle sizes. According to the present invention, it is possible to provide a film forming method for forming a porous film formed of an inorganic substance without requiring a baking step, a body having a film formed thereon that is produced by the film forming method, and a dye-sensitized solar cell including the body having a film formed thereon.

Abstract: A method for producing a semiconductor film, comprising spraying raw material particles to a substrate to form a semiconductor film on the substrate, wherein the raw material particles comprise semiconductor particles each having adsorbed on its surface an aggregation-suppressive substance which suppresses aggregation of the semiconductor particles.

Abstract: To prevent a processing gas from leaking from a processing tank for processing a surface of a substrate and to stabilize flow of the processing gas in a processing space. A substrate 9 is conveyed into the inside of a processing tank 10 through an entrance port 13 by a conveyor 20 and positioned in a processing space 19. A processing gas is supplied to the processing space 19 by a supply system 30, and the substrate 9 is surface processed. Subsequently, the substrate 9 is conveyed out through an exit port 14. Gas inside of the processing tank 10 is exhausted by an exhaust system 40. The exhausting of gas causes gas outside of the processing tank 10 to inflow into the inside of the processing tank 10 through the openings 13, 14 such that an average flow velocity of the inflow gas is at least 0.1 m/sec yet smaller than a velocity that would allow the inflow gas to reach the processing space 19.

Abstract: In atmospheric-pressure plasma processing, fluctuation of a recovery rate or a recovery concentration of a fluorine raw material is restrained to secure stability of processing. Exhaust gas led out from an atmospheric-pressure plasma processing part 2 to an exhaust line 30 is separated by a separation membrane 41 of a separation part 4 into collected gas for a recovered line 50 and release gas for a release line 60. The collected gas is utilized as at least a part of processing gas. At the time of the separation, physical quantity (preferably pressure) of at least two gases of the collected gas, the release gas and the exhaust gas related to the separation are regulated according to flow rate of the processing gas so that either one or both of a recovery rate or a recovery concentration of a fluorine raw material are as desired.