Abstract: An engine controller, an engine control method, and memory medium are provided. A second calculation process calculates an intake air amount without using a detection result of an air flow meter. The determination process determines that intake air pulsation is great if it is confirmed that a difference between an average flow rate and a minimum flow rate is great. The average flow rate is an average value of an intake air flow rate within a period of the intake air pulsation. The minimum flow rate is a minimum value of the intake air flow rate within the period. When it is determined that the intake air pulsation is great, a calculation method switching process selects a calculated value of the intake air amount that is obtained by the second calculation process.

Abstract: An engine controller is provided. A second calculation process calculates an intake air amount without using an output of an air flow meter. A second determination process determines whether an intake air pulsation in an intake passage is great without using the output of the air flow meter. When the intake air pulsation is determined to be great by at least one of a first determination process and the second determination process, a calculation method switching process selects the calculated value of the intake air amount obtained by the second calculation process as a calculated value of the intake air amount used to determine an operation amount of an actuator.

Abstract: An engine controller, an engine control method, and a memory medium are provided. A second calculation process calculates an intake air amount without using a detected value of the intake air flow rate. A guard process sets a difference amount learning value as a learning reflected value when the difference amount learning value is less than or equal to an upper limit guard value and greater than or equal to a lower limit guard value. A calculation method switching process sets a sum of a second intake air amount and the learning reflected value as a calculated value of the intake air amount when it is determined that an intake air pulsation is great.

Abstract: An engine controller, an engine control method, and a memory medium are provided. A second calculation process calculates an intake air amount without using a detected value of the intake air flow rate. A guard process sets a difference amount learning value as a learning reflected value when the difference amount learning value is less than or equal to an upper limit guard value and greater than or equal to a lower limit guard value. A calculation method switching process sets a sum of a second intake air amount and the learning reflected value as a calculated value of the intake air amount when it is determined that an intake air pulsation is great.

Abstract: A first intake air amount an engine is calculated based on a detected value of an intake air flow rate of an air flowmeter. A second intake air amount is calculated based on any one of a detected value of an intake pipe pressure and a throttle opening degree instead of the detected value of the intake air flow rate. When it is determined that the intake pulsation is not large, a difference amount of the second intake air amount from the first intake air amount is calculated. A corrected second intake air amount, which is a sum of the second intake air amount and the difference amount, is set as an intake air amount calculated value when it is determined that the intake pulsation is large.

Abstract: An engine controller, an engine control method, and memory medium are provided. A second calculation process calculates an intake air amount without using a detection result of an air flow meter. The determination process determines that intake air pulsation is great if it is confirmed that a difference between an average flow rate and a minimum flow rate is great. The average flow rate is an average value of an intake air flow rate within a period of the intake air pulsation. The minimum flow rate is a minimum value of the intake air flow rate within the period. When it is determined that the intake air pulsation is great, a calculation method switching process selects a calculated value of the intake air amount that is obtained by the second calculation process.

Abstract: An engine controller is provided. A second calculation process calculates an intake air amount without using an output of an air flow meter. A second determination process determines whether an intake air pulsation in an intake passage is great without using the output of the air flow meter. When the intake air pulsation is determined to be great by at least one of a first determination process and the second determination process, a calculation method switching process selects the calculated value of the intake air amount obtained by the second calculation process as a calculated value of the intake air amount used to determine an operation amount of an actuator.

Abstract: A first intake air amount an engine is calculated based on a detected value of an intake air flow rate of an air flowmeter. A second intake air amount is calculated based on any one of a detected value of an intake pipe pressure and a throttle opening degree instead of the detected value of the intake air flow rate. When it is determined that the intake pulsation is not large, a difference amount of the second intake air amount from the first intake air amount is calculated. A corrected second intake air amount, which is a sum of the second intake air amount and the difference amount, is set as an intake air amount calculated value when it is determined that the intake pulsation is large.

Abstract: A semiconductor device production composition comprises a product obtained by mixing a metal compound and a compound represented by Formula (1) in a first organic solvent, and a second organic solvent. R and R? each independently represent a hydrogen atom, a linear or cyclic alkyl group having a carbon number of 2 to 20, a linear or cyclic alkylcarbonyl group having a carbon number of 2 to 20, an aryl group having a carbon number of 6 to 20, or an aryloxy group having a carbon number of 6 to 20, and part of the hydrogen atoms in the cyclic alkyl, cyclic alkylcarbonyl, aryl, or aryloxy group are substituted or unsubstituted.

Abstract: An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a ?-diketone, a ?-keto ester, a ?-dicarboxylic acid ester or a combination thereof. The at least one bridging ligand includes a first bridging ligand derived from a compound represented by formula (1). An amount of the first bridging ligand is no less than 50 mol % with respect to a total of the bridging ligand. In the formula (1), R1 represents an organic group having a valency of n. X represents —OH, —COOH, —NCO or —NHRa, wherein Ra represents a hydrogen atom or a monovalent organic group. n is an integer of 2 to 4.

Abstract: A pattern-forming method includes applying an inorganic film-forming composition on an upper face side of a substrate to provide an inorganic film, forming a resist pattern on an upper face side of the inorganic film; and dry-etching once or several times using the resist pattern as a mask such that the substrate has a pattern The inorganic film-forming composition includes a polyacid or a salt thereof, and an organic solvent. The step for forming a resist pattern may include the steps of: applying a resist composition on an upper face side of the inorganic film to provide a resist film; exposing the resist film; and developing the resist film exposed.

Abstract: A composition for film formation includes a hydrolysis compound and a solvent composition. The hydrolysus compound is a hydrolysis product of a metal compound including a hydrolyzable group, a hydrolytic condensation product of the metal compound, a condensation product of the metal compound and a compound represented by formula (1), or a combination thereof. The metal compound includes a metal element from group 3, 4, 5, 6, 7, 8, 9, 10, 11, 12 or 13, or a combination thereof. The solvent composition includes an alcohol organic solvent, and a non-alcohol organic solvent that does not include an alcoholic hydroxyl group and that include a group including a hetero atom.

Abstract: A semiconductor device production composition comprises a product obtained by mixing a metal compound and a compound represented by Formula (1) in a first organic solvent, and a second organic solvent. R and R? each independently represent a hydrogen atom, a linear or cyclic alkyl group having a carbon number of 2 to 20, a linear or cyclic alkylcarbonyl group having a carbon number of 2 to 20, an aryl group having a carbon number of 6 to 20, or an aryloxy group having a carbon number of 6 to 20, and part of the hydrogen atoms in the cyclic alkyl, cyclic alkylcarbonyl, aryl, or aryloxy group are substituted or unsubstituted.

Abstract: A composition includes a metal compound and a solvent. The metal compound includes: a plurality of metal atoms of titanium, tantalum, zirconium, tungsten or a combination thereof; oxygen atoms each crosslinking the metal atoms; and polydentate ligands each coordinating to the metal atom. An absolute molecular weight of the metal compound as determined by static light scattering is no less than 8,000 and no greater than 50,000. A pattern-forming method includes applying the composition on an upper face side of a substrate to form an inorganic film. A resist pattern is formed on an upper face side of the inorganic film. The inorganic film and the substrate are dry-etched, by each separate etching operation, using the resist pattern as a mask such that the substrate has a pattern.

Abstract: A pattern-forming method includes applying an inorganic film-forming composition on an upper face side of a substrate to provide an inorganic film, forming a resist pattern on an upper face side of the inorganic film; and dry-etching once or several times using the resist pattern as a mask such that the substrate has a pattern The inorganic film-forming composition includes a polyacid or a salt thereof, and an organic solvent. The step for forming a resist pattern may include the steps of: applying a resist composition on an upper face side of the inorganic film to provide a resist film; exposing the resist film; and developing the resist film exposed.

Abstract: An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a ?-diketone, a ?-keto ester, a ?-dicarboxylic acid ester or a combination thereof. The at least one bridging ligand includes a first bridging ligand derived from a compound represented by formula (1). An amount of the first bridging ligand is no less than 50 mol % with respect to a total of the bridging ligand. In the formula (1), R1 represents an organic group having a valency of n. X represents —OH, —COOH, —NCO or —NHRa, wherein Ra represents a hydrogen atom or a monovalent organic group. n is an integer of 2 to 4.

Abstract: A composition for film formation includes a hydrolysis compound and a solvent composition. The hydrolysis compound is a hydrolysis product of a metal compound including a hydrolyzable group, a hydrolytic condensation product of the metal compound, a condensation product of the metal compound and a compound represented by formula (1), or a combination thereof. The metal compound includes a metal element from group 3, 4, 5, 6, 7, 8, 9, 10, 11, 12 or 13, or a combination thereof. The solvent composition includes an alcohol organic solvent, and a non-alcohol organic solvent that does not include an alcoholic hydroxyl group and that include a group including a hetero atom.

Abstract: A composition for forming a resist underlayer film includes a polysiloxane and a solvent. The solvent includes an organic solvent having a standard boiling point of no less than 150.0° C., and water. A content of the organic solvent is no less than 1% by mass and no greater than 50% by mass with respect to a total amount of the solvent. A content of water is no less than 1% by mass and no greater than 30% by mass with respect to the total amount of the solvent.

Abstract: A composition for forming a resist underlayer film includes a polysiloxane and a solvent. The solvent includes an organic solvent having a standard boiling point of no less than 150.0° C., and water. A content of the organic solvent is no less than 1% by mass and no greater than 50% by mass with respect to a total amount of the solvent. A content of water is no less than 1% by mass and no greater than 30% by mass with respect to the total amount of the solvent.