Abstract: A photoelectric conversion device includes: a light absorption layer that has a light entrance surface and a compound semiconductor material; a first electrode provided for each of the pixels, in opposed relation to an opposite surface to the light entrance surface, a first semiconductor layer of a first conductive type, with a bandgap energy larger than bandgap energy of the light absorption layer and that is provided between the light absorption layer and the first electrode; a second semiconductor layer of a second conductive type, with a bandgap energy larger than the bandgap energy of the light absorption layer and that is provided between the first semiconductor layer and the light absorption layer; and a first diffusion region of the second conductive type, in which the first diffusion region is provided between adjacent ones of the pixels and across the second semiconductor layer and the light absorption layer.

Abstract: A light receiving device includes: a photoelectric conversion layer that includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electrical charges; a plurality of contact layers that include a second compound semiconductor, and are provided on the photoelectric conversion layer at spacing intervals with respect to one another; and a covering layer that is formed to cover a portion corresponding to the spacing intervals of a front surface of the photoelectric conversion layer and side surfaces of the respective contact layers, and includes a Group IV semiconductor.

Abstract: A solid-state image sensor includes a pixel formed, upon forming a structure where a photoelectric conversion layer is laminated on a wiring layer constituting a pixel circuit, by forming at least the photoelectric conversion layer and a wiring layer bonding layer on a different substrate from a semiconductor substrate in which the wiring layer is formed, and by bonding the wiring layer bonding film of the different substrate and the wiring layer of the semiconductor substrate together.

Abstract: A light receiving device includes: a photoelectric conversion layer that includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electrical charges; a plurality of contact layers that include a second compound semiconductor, and are provided on the photoelectric conversion layer at spacing intervals with respect to one another; and a covering layer that is formed to cover a portion corresponding to the spacing intervals of a front surface of the photoelectric conversion layer and side surfaces of the respective contact layers, and includes a Group IV semiconductor.

Abstract: The present disclosure relates to a semiconductor device, a solid state imaging element, and an electronic apparatus in which the adverse effect due to hot carrier luminescence can be suppressed. In them, an element formation unit in which a plurality of elements are formed and an interconnection unit in which interconnections connecting elements are formed are stacked. A structure object formed between a light receiving element that receives light and performs photoelectric conversion and an active element that forms a peripheral circuit placed around the light receiving element in such a manner that the gap in the thickness direction of the element formation unit is not more than a prescribed spacing and formed of a material that inhibits the propagation of light is placed in the element formation unit. The present technology can be applied to a back-side illumination solid state imaging element, for example.

Abstract: This light-receiving element includes: a substrate; a photoelectric conversion layer that is provided on the substrate and includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electric charges; a semiconductor layer that is provided on the photoelectric conversion layer and includes a second compound semiconductor, and has an opening in a selective region; and an electrode that buries the opening of the semiconductor layer and is electrically coupled to the photoelectric conversion layer.

Abstract: A solid-state image sensor includes a pixel formed, upon forming a structure where a photoelectric conversion layer is laminated on a wiring layer constituting a pixel circuit, by forming at least the photoelectric conversion layer and a wiring layer bonding layer on a different substrate from a semiconductor substrate in which the wiring layer is formed, and by bonding the wiring layer bonding film of the different substrate and the wiring layer of the semiconductor substrate together.

Abstract: A semiconductor device including a device substrate and a readout circuit substrate. The device substrate includes a device region and a peripheral region. In the device region, a wiring layer and a first semiconductor layer including a compound semiconductor material are stacked. The peripheral region is disposed outside the device region. The readout circuit substrate faces the first semiconductor layer with the wiring layer in between, and is electrically coupled to the first semiconductor layer through the wiring layer. The peripheral region of the device substrate has a junction surface with the readout circuit substrate.

Abstract: The present disclosure relates to a semiconductor device, a solid state imaging element, and an electronic apparatus in which the adverse effect due to hot carrier luminescence can be suppressed. In them, an element formation unit in which a plurality of elements are formed and an interconnection unit in which interconnections connecting elements are formed are stacked. A structure object formed between a light receiving element that receives light and performs photoelectric conversion and an active element that forms a peripheral circuit placed around the light receiving element in such a manner that the gap in the thickness direction of the element formation unit is not more than a prescribed spacing and formed of a material that inhibits the propagation of light is placed in the element formation unit. The present technology can be applied to a back-side illumination solid state imaging element, for example.

Abstract: The present technology relates to an imaging apparatus and a manufacturing method which enables sensitivity of an imaging apparatus using infrared rays to be improved.

Abstract: To increase the space efficiency of an imaging apparatus which deals with a speckle pattern. An imaging apparatus includes a first image sensor and a second image sensor. The first image sensor images light entering the first image sensor from an object through an optical system to generate image data of the object. The second image sensor images a speckle pattern formed by scattering of light striking the object to generate image data of the speckle pattern, the speckle pattern entering the second image sensor through the optical system. In the imaging apparatus, the first image sensor and the second image sensor are placed side by side in an optical axis direction of the optical system.

Abstract: This light-receiving element includes: a substrate; a photoelectric conversion layer that is provided on the substrate and includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electric charges; a semiconductor layer that is provided on the photoelectric conversion layer and includes a second compound semiconductor, and has an opening in a selective region; and an electrode that buries the opening of the semiconductor layer and is electrically coupled to the photoelectric conversion layer.

Abstract: Provided is a lens module including a substrate in which a wafer level lens is formed. When the wafer level lens is divided into individual units, an intersection hole is formed at an intersection of a dicing line along which dicing is performed, and the substrate is then generated when diced along the dicing line.

Abstract: A light-receiving device of an embodiment of the present disclosure includes: a photoelectric conversion layer that includes a first compound semiconductor with a first conductivity type and absorbs a wavelength of an infrared region; a first semiconductor layer formed on the photoelectric conversion layer; and an insulation layer formed to surround the photoelectric conversion layer and the first semiconductor layer, the first semiconductor layer having a second conductivity-type region at a middle region excluding a periphery facing the photoelectric conversion layer.

Abstract: The present technology relates to an imaging apparatus and a manufacturing method which enables sensitivity of an imaging apparatus using infrared rays to be improved.

Abstract: A light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric conversion layer common to the plurality of pixels, a first electrode layer provided on side of a light incident surface of the photoelectric conversion layer, and a light-shielding section embedded between the plurality of pixels adjacent to each other of the first electrode layer.

Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided.

Abstract: Image quality is to be increased by a compound-lens type imaging apparatus. Lines each having pixels arranged in a predetermined direction are arranged on the light receiving surface. The pixels each generate a pixel signal by performing exposure when supplied with an exposure start signal. First and second lenses form first and second images that partially overlap at overlapping portions on the light receiving surface. A scanning unit supplies the exposure start signal to a line sequentially selected in the overlapping portion of the first image among the lines, and the line corresponding to the selected line in the overlapping portion of the second image. A combining unit combines images formed from pixel signals into one image.

Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided.

Abstract: A light receiving device includes: a photoelectric conversion layer that includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electrical charges; a plurality of contact layers that include a second compound semiconductor, and are provided on the photoelectric conversion layer at spacing intervals with respect to one another; and a covering layer that is formed to cover a portion corresponding to the spacing intervals of a front surface of the photoelectric conversion layer and side surfaces of the respective contact layers, and includes a Group IV semiconductor.