Abstract: A light emitting device can further improve light extraction efficiency. A method of manufacturing such a light emitting device can also prove advantageous. The light emitting device includes a light emitting element, a light-transmissive member which is disposed on a light extracting surface side of the light emitting element, and a reflecting layer disposed on an element bonding surface of the light transmissive member where the light emitting element is disposed and adjacent to the light emitting element. The light-transmissive member, in a plan view, has a planar dimension greater than the light extracting surface of the light emitting element.

Abstract: A light emitting element includes a first light emitting portion and a second light emitting portion. The first light emitting portion includes a first stacked body having a first n-type layer, a first active layer, a first p-type layer, a first tunnel junction layer, and a second n-type layer. The second light emitting portion includes a second stacked body having a third n-type layer, a second p-type layer, a second tunnel junction layer, a fourth n-type layer, a second active layer, a third p-type layer, and a transmissive conductive film. A resistivity of the second n-type layer is higher than a resistivity of the transmissive conductive film. A thickness of the second n-type layer is larger than a thickness of the transmissive conductive film.

Abstract: A semiconductor laser includes: a first semiconductor layer part including a semiconductor layer of a first conductivity type; an active layer disposed on the first semiconductor layer part; a second semiconductor layer part disposed on the active layer and including a semiconductor layer of a second conductivity type; a third semiconductor layer p100415-0433art disposed on the second semiconductor layer part and including a semiconductor layer containing a first concentration of an impurity of the first conductivity type; and a fourth semiconductor layer part disposed on the third semiconductor layer part and including a semiconductor layer containing a second concentration of the impurity of the first conductivity type, the second concentration being lower than the first concentration. The third semiconductor layer part is directly bonded to the fourth semiconductor layer part. At least one of the third semiconductor layer part or the fourth semiconductor layer part includes a photonic crystal.

Abstract: A light emitting apparatus includes: a mount substrate; one or more light emitting devices located above the mount substrate; a light conversion member located above the one or more light emitting devices; and a covering member that contains a light reflective material and covers the one or more light emitting devices. The light conversion member includes: a light emission surface facing upward, a lateral surface facing laterally, and a light receiving surface facing downward. The covering member covers the lateral surface of the light conversion member, and is interposed between the mount substrate and the one or more light emitting devices.

Abstract: A light emitting apparatus includes: a mount substrate; at least one light emitting device mounted on the mount substrate; a light transparent member, wherein a lower surface of the light transparent member is attached to an upper surface of the at least one light emitting device via at least one adhesive material layer, wherein the light transparent member has a plate shape and is positioned to receive incident light emitted from the light emitting devices, and wherein a lateral surface of the light transparent member is located laterally inward of a lateral surface of the at least one light emitting device; and a covering member that contains a light reflective material and covers at least the lateral surface of the light transparent member.

Abstract: A semiconductor light emitting element includes: a first light emitting part comprising: a first n-side nitride semiconductor layer; a first active layer located on the first n-side nitride semiconductor layer; and a first p-side nitride semiconductor layer located on the first active layer; and a second n-side nitride semiconductor layer. A bonding face of the first light emitting part and a bonding face of the second n-side nitride semiconductor layer are directly bonded. At least one void is present between the bonding face of the first light emitting part and the bonding face of the second n-side nitride semiconductor layer.

Abstract: A light emitting element includes a first light emitting portion and a second light emitting portion. The first light emitting portion includes a first stacked body having a first n-type layer, a first active layer, a first p-type layer, a first tunnel junction layer, and a second n-type layer. The second light emitting portion includes a second stacked body having a third n-type layer, a second p-type layer, a second tunnel junction layer, a fourth n-type layer, a second active layer, a third p-type layer, and a transmissive conductive film. A resistivity of the second n-type layer is higher than a resistivity of the transmissive conductive film. A thickness of the second n-type layer is larger than a thickness of the transmissive conductive film.

Abstract: A light emitting apparatus includes: a mount substrate; at least one light emitting device mounted on the mount substrate; a light transparent member, wherein a lower surface of the light transparent member is attached to an upper surface of the at least one light emitting device via at least one adhesive material layer, wherein the light transparent member has a plate shape and is positioned to receive incident light emitted from the light emitting devices, and wherein a lateral surface of the light transparent member is located laterally inward of a lateral surface of the at least one light emitting device; and a covering member that contains a light reflective material and covers at least the lateral surface of the light transparent member.

Abstract: A light emitting apparatus includes: a mount substrate; a first light emitting device mounted on the mount substrate; a light transparent member, wherein a lower surface of the light transparent member is attached to an upper surface of the first light emitting device via an adhesive material, wherein the light transparent member has a plate shape and is positioned to receive incident light emitted from the first light emitting device, and wherein a first lateral surface of the light transparent member is located laterally inward of a lateral surface of the first light emitting device; and a covering member that contains a light reflective material and covers at least the lateral surface of the light transparent member.

Abstract: A light emitting device can further improve light extraction efficiency. A method of manufacturing such a light emitting device can also prove advantageous. The light emitting device includes a light emitting element, a light-transmissive member which is disposed on a light extracting surface side of the light emitting element, and a reflecting layer disposed on an element bonding surface of the light transmissive member where the light emitting element is disposed and adjacent to the light emitting element. The light-transmissive member, in a plan view, has a planar dimension greater than the light extracting surface of the light emitting element.

Abstract: A light emitting device can further improve light extraction efficiency. A method of manufacturing such a light emitting device can also prove advantageous. The light emitting device includes a light emitting element, a light-transmissive member which is disposed on a light extracting surface side of the light emitting element, and a reflecting layer disposed on an element bonding surface of the light transmissive member where the light emitting element is disposed and adjacent to the light emitting element. The light-transmissive member, in a plan view, has a planar dimension greater than the light extracting surface of the light emitting element.

Abstract: A light emitting device can further improve light extraction efficiency. A method of manufacturing such a light emitting device can also prove advantageous. The light emitting device includes a light emitting element, a light-transmissive member which is disposed on a light extracting surface side of the light emitting element, and a reflecting layer disposed on an element bonding surface of the light transmissive member where the light emitting element is disposed and adjacent to the light emitting element. The light-transmissive member, in a plan view, has a planar dimension greater than the light extracting surface of the light emitting element.

Abstract: A light emitting device can further improve light extraction efficiency. A method of manufacturing such a light emitting device can also prove advantageous. The light emitting device includes a light emitting element, a light-transmissive member which is disposed on a light extracting surface side of the light emitting element, and a reflecting layer disposed on an element bonding surface of the light transmissive member where the light emitting element is disposed and adjacent to the light emitting element. The light-transmissive member, in a plan view, has a planar dimension greater than the light extracting surface of the light emitting element.

Abstract: A light emitting apparatus includes: a mount substrate; at least one light emitting device mounted on the mount substrate; a light transparent member, wherein a lower surface of the light transparent member is attached to an upper surface of the at least one light emitting device via at least one adhesive material layer, wherein the light transparent member has a plate shape and is positioned to receive incident light emitted from the light emitting devices, and wherein a lateral surface of the light transparent member is located laterally inward of a lateral surface of the at least one light emitting device; and a covering member that contains a light reflective material and covers at least the lateral surface of the light transparent member.

Abstract: A light emitting apparatus includes a mount substrate; two or more light emitting devices mounted on the mount substrate such that adjacent light emitting devices face each other at lateral surfaces thereof; a light transparent member positioned on upper surfaces of the light emitting devices, the light transparent member having a plate shape and being positioned to receive incident light emitted from the light emitting devices; and a covering member. In a plan view, the light transparent member is larger than each of the light emitting devices. The covering member contains a light reflective material and covers at least a lateral surface of the light transparent member.

Abstract: A semiconductor light emitting element includes a first semiconductor layer, an active layer, a second semiconductor layer, a first conducting layer, a second conducting layer, and an insulating layer. The insulating layer is disposed at least on or above the upper surface of the second conducting layer. Holes are opened at given intervals through the second semiconductor layer to expose the first semiconductor layer at bottom surfaces of the holes. In each of the holes, the insulating layer covers from a side-wall surface of each of the holes to a first region provided on or above the upper surface of the second conducting layer around a top of each of the holes. The first conducting layer covers from the bottom surface of each of the holes to a second region provided over the second conducting layer and the insulating layer around the top of each of the holes.

Abstract: A light emitting device can further improve light extraction efficiency. A method of manufacturing such a light emitting device can also prove advantageous. The light emitting device includes a light emitting element, a light-transmissive member which is disposed on a light extracting surface side of the light emitting element, and a reflecting layer disposed on an element bonding surface of the light transmissive member where the light emitting element is disposed and adjacent to the light emitting element. The light-transmissive member, in a plan view, has a planar dimension greater than the light extracting surface of the light emitting element.

Abstract: A semiconductor light emitting element includes a first semiconductor layer, an active layer, a second semiconductor layer, a first conducting layer, a second conducting layer, and an insulating layer. The insulating layer is disposed at least on or above the upper surface of the second conducting layer. Holes are opened at given intervals through the second semiconductor layer to expose the first semiconductor layer at bottom surfaces of the holes. In each of the holes, the insulating layer covers from a side-wall surface of each of the holes to a first region provided on or above the upper surface of the second conducting layer around a top of each of the holes. The first conducting layer covers from the bottom surface of each of the holes to a second region provided over the second conducting layer and the insulating layer around the top of each of the holes.

Abstract: A method of producing a semiconductor light emitting element includes providing a semiconductor stack including a first semiconductor layer, an active layer, a second semiconductor layer, and a first insulating layer. An upper surface of the first insulating layer is partially covered with a mask. The semiconductor stack is etched to expose the first semiconductor layer in a region not covered by the mask. The mask is removed. A second insulating layer covering from the upper surface of the first insulating layer to an exposed region of the first semiconductor layer is provided. The second insulating layer is etched without masking to remove at least a portion of the second insulating layer covering the exposed region to expose the exposed region. A first conducting layer covering from the exposed region of the first semiconductor layer to a region above the upper surface of the first insulating layer is provided.

Abstract: A light emitting device can further improve light extraction efficiency. A method of manufacturing such a light emitting device can also prove advantageous. The light emitting device includes a light emitting element, a light-transmissive member which is disposed on a light extracting surface side of the light emitting element, and a reflecting layer disposed on an element bonding surface of the light transmissive member where the light emitting element is disposed and adjacent to the light emitting element. The light-transmissive member, in a plan view, has a planar dimension greater than the light extracting surface of the light emitting element.