Abstract: An adhesive composition for use in debonding with light irradiation, which composition can achieve debonding through irradiation with light, characterized in that the adhesive composition contains an adhesive component (S) and a light-absorbing organic compound (X); and the light-absorbing organic compound (X) contains, in the molecule thereof, one or more aromatic rings, one or more rings each containing a heteroatom forming the ring, and one or more groups selected from among a carbonyl group and a thiocarbonyl group.

Abstract: There is provided a laminate including: a support substrate; a semiconductor substrate having a bump on a side of the support substrate; an inorganic material layer interposed between the support substrate and the semiconductor substrate and in contact with the semiconductor substrate; and an adhesive layer interposed between the support substrate and the inorganic material layer and in contact with the support substrate and the inorganic material layer, in which the laminate is used for an application in which the support substrate and the semiconductor substrate are separated from each other after processing of the semiconductor substrate in the laminate, and an adhesive force between the inorganic material layer and the adhesive layer when the support substrate and the semiconductor substrate are separated from each other is smaller than an adhesive force between the inorganic material layer and the semiconductor substrate.

Abstract: The laminate of the invention has a semiconductor substrate, a support substrate, a release layer disposed so as to come into contact with the semiconductor substrate, and an adhesive layer disposed between the support substrate and the release layer, characterized in that the release layer is a film formed from a releasing agent composition containing a polyorganosiloxane component essentially containing polydimethylsiloxane; the polyorganosiloxane component has a viscosity of 5.50 × 103 Pa·s to 0.75 × 103 Pa·s, as measured at 25° C.; and the film has a thickness of 0.01 µm to 4.90 µm.

Abstract: An adhesive composition for forming an adhesive layer that can bond a first substrate formed of a semiconductor-forming substrate to a second substrate formed of a support substrate in a peelable manner, the composition containing a component (A) which is cured through hydrosilylation and a peeling component (B) which contains a component containing an epoxy-modified polyorganosiloxane, wherein the component (A) contains a polysiloxane (A1) including a siloxane unit represented by SiO2 (unit Q) and the like, and a platinum group metal catalyst (A2); and the polysiloxane (A1) contains a polyorganosiloxane (a1) including a siloxane unit represented by SiO2 (unit Q?) and the like, and a polyorganosiloxane (a2) including a siloxane unit represented by SiO2 (unit Q?) and the like, and having a functional group (Si—H) content of 5.0 mol/kg or greater.

Abstract: A laminate having a semiconductor substrate, a UV-ray-transmissive support substrate, and an adhesive layer and a release layer disposed between the semiconductor substrate and the support substrate. The release layer is a film formed from a releasing agent composition containing a polymer of an ethylenic unsaturated monomer having a tert-butoxycarbonyl group, a photoacid generator, and a solvent.

Abstract: A cleaning agent composition for use in removing an adhesive residue, characterized in that the composition contains a quaternary ammonium salt and a composition solvent including a first organic solvent and a second organic solvent; the first organic solvent is an amide derivative represented by formula (Z) (wherein R0 represents an ethyl group, a propyl group, or an isopropyl group; and each of RA and RB represents a C1 to C4 alkyl group); the second organic solvent is a non-amide organic solvent other than the amide derivative; and the composition has a water content less than 4.0 mass %.

Abstract: A simple method for removing foreign substances that are formed on a substrate during a semiconductor device production process and a composition for forming a coating film for foreign substance removal, said coating film being used in the above-described method. A composition for forming a coating film for foreign substance removal, said composition containing a polymer and a solvent and being capable of forming a coating film that dissolves in a developer liquid, wherein: the polymer is selected from among phenolic novolacs, polyhydroxystyrene derivatives and carboxylic acid-containing polymers; and the polymer is contained in an amount of 50% by mass or more relative to the total solid content in the composition.

Abstract: The invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (in the formula, L represents a substituent to the benzene ring, and each of a plurality of Ls represents a C1 to C4 alkyl group; and k represents the number of Ls and is an integer of 0 to 5) in an amount of 80 mass % or more.

Abstract: The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (wherein each of L1 and L2 represents a C2 to C4 alkyl group, and L3 represents O or S) in an amount of 80 mass % or more.

Abstract: The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition which contains a solvent but no salt, the solvent containing a C8 to C10 linear-chain, saturated, aliphatic hydrocarbon compound. As the C8 to C10 linear-chain, saturated, aliphatic hydrocarbon compound, a linear-chain hydrocarbon compound is used.

Abstract: The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (in the formula, each of L1 and L2 represents a C1 to C6 alkyl group, and the sum of the number of carbon atoms of the alkyl group L1 and that of the alkyl group L2 is 6 or less) in an amount of 80 mass % or more.

Abstract: A semiconductor substrate cleaning method including removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by any of formulae (L0) to (L4).

Abstract: The invention provides a cleaning agent composition for use in removing an adhesive residue, characterized in that the composition contains a quaternary ammonium salt, a metal corrosion inhibitor, and an organic solvent, and the metal corrosion inhibitor is formed of a C7 to C40 saturated aliphatic hydrocarbon compound monocarboxylic acid, a C7 to C40 saturated aliphatic hydrocarbon compound dicarboxylic acid or anhydride, a C7 to C40 unsaturated aliphatic hydrocarbon compound monocarboxylic acid, or a C7 to C40 unsaturated aliphatic hydrocarbon compound dicarboxylic acid or anhydride.

Abstract: The invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, characterized in that the remover composition contains a solvent but no salt; the solvent includes one or more species selected from among an aliphatic hydrocarbon compound, an aromatic hydrocarbon compound, an ether compound, a thioether compound, an ester compound, and an amine compound, each having a molecular weight less than 160; and the remover composition exhibits a contact angle smaller than 31.5° with respect to the adhesive layer.

Abstract: A cleaning agent composition for use in removing an adhesive residue, characterized in that the composition contains a quaternary ammonium salt and a composition solvent including a first organic solvent and a second organic solvent; the first organic solvent is an amide derivative represented by formula (Z) (wherein R0 represents an ethyl group, a propyl group, or an isopropyl group; and each of RA and RB represents a C1 to C4 alkyl group); the second organic solvent is a non-amide organic solvent other than the amide derivative; and the composition has a water content less than 4.0 mass %.

Abstract: The invention provides an adhesive composition containing an adhesive component (S) and a release component (H) formed of a polyorganosiloxane having a complex viscosity of 3,400 (Pa·S) or higher.

Abstract: A laminated body for polishing a back surface of a wafer, the laminated body including an intermediate layer that is disposed between a support and a circuit surface of the wafer and peelably adheres to the support and the circuit surface, wherein the intermediate layer includes an adhesion layer in contact with the wafer and a peeling layer in contact with the support, and the peeling layer contains a novolac resin that absorbs light with a wavelength of 190 nm to 600 nm incident through the support, resulting in modification. The light transmittance of the peeling layer at a wavelength range of 190 nm to 600 nm may be 1 to 90%. The modification caused by absorption of light may be photodecomposition of the novolac resin.

Abstract: An adhesive for separatably attaching a support to a circuit side of a wafer to process a rear surface of the wafer, the adhesive including a component (A) that is cured by a hydrosilylation reaction and a component (B) containing a phenyl group-containing polyorganosiloxane, wherein a ratio in % by mass of the component (A) to the component (B) is 95:5 to 30:70. A separation method including applying the adhesive onto a first body to form an adhesion layer, attaching a second body to the adhesion layer, heating the adhesion layer from a side of the first body to cure the adhesive to form a layered body, processing the layered body, and carrying out separation between the adhesion layer, and the first and second bodies. The processing may be polishing the rear surface of the wafer.

Abstract: An adhesive composition for forming an adhesive layer that can bond a first substrate formed of a semiconductor-forming substrate to a second substrate formed of a support substrate in a peelable manner, the composition containing a component (A) which is cured through hydrosilylation and a peeling component (B) which contains a component containing an epoxy-modified polyorganosiloxane, wherein the component (A) contains a polysiloxane (A1) including a siloxane unit represented by SiO2 (unit Q) and the like, and a platinum group metal catalyst (A2); and the polysiloxane (A1) contains a polyorganosiloxane (a1) including a siloxane unit represented by SiO2 (unit Q?) and the like, and a polyorganosiloxane (a2) including a siloxane unit represented by SiO2 (unit Q?) and the like, and having a functional group (Si—H) content of 5.0 mol/kg or greater.

Abstract: An adhesive composition for use in debonding with light irradiation, which composition can achieve debonding through irradiation with light, characterized in that the adhesive composition contains an adhesive component (S) and a light-absorbing organic compound (X); and the light-absorbing organic compound (X) contains, in the molecule thereof, one or more aromatic rings, one or more rings each containing a heteroatom forming the ring, and one or more groups selected from among a carbonyl group and a thiocarbonyl group.