Abstract: A computer implemented method searches data. A number of processor units generates a candidate search result using an index for a data source in response to a search query by a user, wherein the candidate search result comprises files accessible by the user based on access control information in the index. The number of processor units generates a completed search result with a set of the files from the candidate search result having a confidentiality level less than or equal to a threshold confidentiality level. The number of processor units determines whether the user has access to a file in the candidate search result in which the file has the confidentiality level greater than the threshold confidentiality level for the data source. The number of processor units adds the file to the completed search result in response to the file being accessible by the user in the data source.

Abstract: A semiconductor device includes: a die pad having a top surface; a semiconductor chip provided on the top surface; a first solder provided between the top surface and the semiconductor chip, the first solder bonding the top surface and the semiconductor chip; a first metal film provided on the semiconductor chip; a first insulating film provided on the first metal film and having a first opening; a connector having a first end and a second end, the first end being provided on the first metal film in the first opening; a second metal film provided in the first opening, the second metal film having a plurality of second openings provided so as to surround a portion of the first metal film in contact with the first end, and the second metal film being provided between the first end of the connector and the portion of the first metal film; a plurality of second insulating films provided in direct contact with the first metal film in each of the second openings; and a second solder provided between the second meta

Abstract: A semiconductor device includes: a die pad having a top surface; a semiconductor chip provided on the top surface; a first solder provided between the top surface and the semiconductor chip, the first solder bonding the top surface and the semiconductor chip; a first metal film provided on the semiconductor chip; a first insulating film provided on the first metal film and having a first opening; a connector having a first end and a second end, the first end being provided on the first metal film in the first opening; a second metal film provided in the first opening, the second metal film having a plurality of second openings provided so as to surround a portion of the first metal film in contact with the first end, and the second metal film being provided between the first end of the connector and the portion of the first metal film; a plurality of second insulating films provided in direct contact with the first metal film in each of the second openings; and a second solder provided between the second meta

Abstract: A semiconductor device includes a semiconductor element and resin. The semiconductor element includes a semiconductor part, first and second electrodes. The semiconductor part includes a back surface, a front surface at a side opposite to the back surface, and a side surface linking the back front surfaces. The semiconductor part includes a groove in the side surface. The groove surrounds the semiconductor part. The first electrode is provided on the back surface of the semiconductor part. The second electrode is provided on the front surface of the semiconductor part. The resin hermetically seals the semiconductor element. The resin includes a portion embedded in the groove.

Abstract: According to an embodiment, a semiconductor device includes a semiconductor layer, a first electrode, and a first insulating film. The first electrode extends in a first direction and is provided inside the semiconductor layer. The first insulating film is provided between the semiconductor layer and the first electrode, a thickness of the first insulating film in a direction from the first electrode toward the semiconductor layer increasing in stages along the first direction. The first insulating film has three or more mutually-different thicknesses.

Abstract: A semiconductor device includes a semiconductor part between first and second electrodes, first and second control electrodes between the semiconductor part and the second electrode. The semiconductor part includes a first region and a second region around the first region. The semiconductor part includes first and third layers of a first conductivity type and second layers of a second conductivity type. The second layers are provided between the first layer and the second electrode. A second layer faces the first control electrode in the second region. Another second layer faces the second control electrode in the second region. A third layer is provided between the second layer and the second electrode. Another third layer is provided between another second layer and the second electrode. The second layer includes a second conductivity type impurity with a concentration lower than that of a second conductivity type impurity in another second layer.

Abstract: A semiconductor device includes a semiconductor part between first and second electrodes, first and second control electrodes between the semiconductor part and the second electrode. The semiconductor part includes a first region and a second region around the first region. The semiconductor part includes first and third layers of a first conductivity type and second layers of a second conductivity type. The second layers are provided between the first layer and the second electrode. A second layer faces the first control electrode in the second region. Another second layer faces the second control electrode in the second region. A third layer is provided between the second layer and the second electrode. Another third layer is provided between another second layer and the second electrode. The second layer includes a second conductivity type impurity with a concentration lower than that of a second conductivity type impurity in another second layer.

Abstract: A semiconductor device includes a die pad; a semiconductor chip mounted on a front surface of the die pad; a bonding layer placed between the die pad and the semiconductor chip; a first resin member being positioned between the bonding layer and the semiconductor chip; and a second resin member covering the semiconductor chip and the front surface of the die pad. The first resin member is provided along a periphery of the semiconductor chip. The bonding layer includes a first portion and a second portion. The first portion is positioned between the semiconductor chip and the die pad, and contacts the semiconductor chip. The second portion is positioned between the first resin member and the die pad.

Abstract: A secondary battery status estimation device includes a sensor unit configured to detect a terminal voltage of a secondary battery, and an internal resistance calculator configured to calculate a direct current internal resistance of the secondary battery based on the terminal voltage and the charge-discharge current detected by the sensor unit. The internal resistance calculator calculates a direct current internal resistance based on the terminal voltage and the charge-discharge current detected by the sensor unit, in a stable period that is before starting a driving source for driving a vehicle and in which the terminal voltage and the charge-discharge current of the secondary battery fall within a predetermined fluctuation range, and in a high-current output period in which electric power for starting the driving source is output from the secondary battery and the terminal voltage of the secondary battery is brought to substantially minimum.

Abstract: A sensor of a status determination device detects a magnitude of a terminal voltage of an auxiliary battery provided separately from a driving battery and a magnitude of a current flowing through the auxiliary battery. The driving battery is an electrical power source for a driving motor of a vehicle, and the auxiliary battery is an electrical power source for auxiliary equipment and has an output voltage lower than that of the driving battery. An internal resistance calculator calculates an internal resistance of the auxiliary battery based on the magnitude of the terminal voltage and the magnitude of the current detected by the sensor in a stable period that is before the auxiliary equipment is started and in which the magnitude of the terminal voltage and the magnitude of the current fall within predetermined fluctuation ranges, and those detected in a period after starting of the auxiliary equipment is detected.

Abstract: According to an embodiment, a semiconductor device includes a semiconductor layer, a first electrode, and a first insulating film. The first electrode extends in a first direction and is provided inside the semiconductor layer. The first insulating film is provided between the semiconductor layer and the first electrode, a thickness of the first insulating film in a direction from the first electrode toward the semiconductor layer increasing in stages along the first direction. The first insulating film has three or more mutually-different thicknesses.

Abstract: A sensor of a status determination device detects a magnitude of a terminal voltage of an auxiliary battery provided separately from a driving battery and a magnitude of a current flowing through the auxiliary battery. The driving battery is an electrical power source for a driving motor of a vehicle, and the auxiliary battery is an electrical power source for auxiliary equipment and has an output voltage lower than that of the driving battery. An internal resistance calculator calculates an internal resistance of the auxiliary battery based on the magnitude of the terminal voltage and the magnitude of the current detected by the sensor in a stable period that is before the auxiliary equipment is started and in which the magnitude of the terminal voltage and the magnitude of the current fall within predetermined fluctuation ranges, and those detected in a period after starting of the auxiliary equipment is detected.

Abstract: A secondary battery status estimation device includes a sensor unit configured to detect a terminal voltage of a secondary battery, and an internal resistance calculator configured to calculate a direct current internal resistance of the secondary battery based on the terminal voltage and the charge-discharge current detected by the sensor unit. The internal resistance calculator calculates a direct current internal resistance based on the terminal voltage and the charge-discharge current detected by the sensor unit, in a stable period that is before starting a driving source for driving a vehicle and in which the terminal voltage and the charge-discharge current of the secondary battery fall within a predetermined fluctuation range, and in a high-current output period in which electric power for starting the driving source is output from the secondary battery and the terminal voltage of the secondary battery is brought to substantially minimum.