Patents by Inventor Shunsuke SHIMO

Shunsuke SHIMO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250048824
    Abstract: A photoelectric conversion element in an embodiment, includes: a substrate; a first electrode; a photoelectric conversion film containing a perovskite crystal having a composition expressed by ABX3; an electron transport layer; and a second electrode. The second electrode includes: a first layer arranged on the electron transport layer and containing at least one first metal selected from Ti, Sn, Zn, Ce, In, and Nb and an oxide of the first metal; and a second layer containing a second metal and an oxide of the second metal. The second layer includes: a first region existing on the first layer side; a second region existing on the first region and having a lower oxygen concentration than the first region; and a third region existing on the second region and having a higher oxygen concentration than the second region.
    Type: Application
    Filed: March 12, 2024
    Publication date: February 6, 2025
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Shunsuke SHIMO, Shigehiko MORI, Atsushi WADA, Akio AMANO
  • Publication number: 20240266997
    Abstract: According to one embodiment, a solar module system includes: a support member that has a principal surface; a solar module arranged on the principal surface; a first terminal arranged on the support member and electrically connected with an electrode of the solar module; a frame member configured to hold the support member such that the solar module opposes to a transparent member; and a second terminal arranged on the frame member and electrically connected with the first terminal of the support member being held by the frame member.
    Type: Application
    Filed: September 12, 2023
    Publication date: August 8, 2024
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Shunsuke SHIMO, Masaya YAMAMITSU, Masayuki MATSUTAKE
  • Patent number: 11955295
    Abstract: According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, a photoelectric conversion layer located between the first conductive layer and the second conductive layer. The photoelectric conversion layer includes Sn and Pb. The photoelectric conversion layer includes a first partial region, a second partial region between the first partial region and the second conductive layer, and a third partial region between the second partial region and the second conductive layer. The first partial region includes a first Sn concentration and a first Pb concentration. The second partial region includes at least one of a second Sn concentration or a second Pb concentration. The second Sn concentration is less than the first Sn concentration. The second Pb concentration is greater than the first Pb concentration. The third partial region includes Sn, oxygen, and Pb.
    Type: Grant
    Filed: August 17, 2021
    Date of Patent: April 9, 2024
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Shunsuke Shimo, Kenji Todori
  • Publication number: 20220285103
    Abstract: According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, an a photoelectric conversion layer located between the first conductive layer and the second conductive layer. The photoelectric conversion layer includes Sn and Pb. The photoelectric conversion layer includes a first partial region, a second partial region between the first partial region and the second conductive layer, and a third partial region between the second partial region and the second conductive layer. The first partial region includes a first Sn concentration and a first Pb concentration. The second partial region includes at least one of a second Sn concentration or a second Pb concentration. The second Sn concentration is less than the first Sn concentration. The second Pb concentration is greater than the first Pb concentration. The third partial region includes Sn, oxygen, and Pb.
    Type: Application
    Filed: August 17, 2021
    Publication date: September 8, 2022
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Shunsuke SHIMO, Kenji TODORI
  • Publication number: 20220149299
    Abstract: According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, and a photoelectric conversion layer located between the first conductive layer and the second conductive layer. The photoelectric conversion layer includes a perovskite compound and a first compound. The first compound includes at least one selected from the group consisting of a pyrrolidone derivative, a urea derivative, an imidazole derivative, a pyridine derivative, and a diamine derivative.
    Type: Application
    Filed: August 17, 2021
    Publication date: May 12, 2022
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Shunsuke SHIMO, Shigehiko MORI, Kenji TODORI, Koji MIZUGUCHI