Patents by Inventor Shunsuke Shioya

Shunsuke Shioya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7439560
    Abstract: A semiconductor device, comprising a semiconductor nanowire having a first region with one of a PN junction and a PIN junction and a second region with a field effect transistor structure, a pair of electrodes connected to both ends of the semiconductor nanowire, and a gate electrode provided in at least a part of the second region via an insulating layer. The semiconductor nanowire has a P-type semiconductor portion and an N-type semiconductor portion, and one of the P-type semiconductor portion and the N-type semiconductor portion is a common structural element of both the first and second regions.
    Type: Grant
    Filed: December 4, 2006
    Date of Patent: October 21, 2008
    Assignee: Canon Kabushiki Kaisha
    Inventors: Shunsuke Shioya, Sotomitsu Ikeda
  • Publication number: 20080220289
    Abstract: There is provided an organic light emitting device including: an anode, a cathode, and layer containing an organic compound, the layer being interposed between the anode and the cathode, in which the layer containing an organic compound contains at least one kind of the oligofluorene compound represented by the following general formula (I): wherein: R1 and R2 each represent an alkyl group, and may be identical to or different from each other, and R1's and R2's by which different fluorene rings are substituted may be identical to or different from each other, provided that at least four substituents of all substituents each represented by R1 or R2 are each an alkyl group having 4 or more carbon atoms, and at least four substituents of all the substituents are each an alkyl group having 1 or 2 carbon atoms; and n represents an integer of 4 to 10.
    Type: Application
    Filed: February 25, 2008
    Publication date: September 11, 2008
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Shunsuke Shioya, Koichi Suzuki, Satoru Shiobara
  • Publication number: 20070228421
    Abstract: A semiconductor device, comprising a semiconductor nanowire having a first region with one of a PN junction and a PIN junction and a second region with a field effect transistor structure, a pair of electrodes connected to both ends of the semiconductor nanowire, and a gate electrode provided in at least a part of the second region via an insulating layer. The semiconductor nanowire has a P-type semiconductor portion and an N-type semiconductor portion, and one of the P-type semiconductor portion and the N-type semiconductor portion is a common structural element of both the first and second regions.
    Type: Application
    Filed: December 4, 2006
    Publication date: October 4, 2007
    Inventors: Shunsuke Shioya, Sotomitsu Ikeda
  • Publication number: 20070126079
    Abstract: A capacitor comprises a first electrode comprised of an electroconductive nano-wire, a dielectric layer partly covering the peripheral face of the first electrode, and a second electrode covering the peripheral face of the dielectric layer. In a circuit device employing the capacitor, a plurality of the capacitors are arranged roughly perpendicularly to a substrate comprised in the circuit device or in parallel to a substrate comprised in the circuit device.
    Type: Application
    Filed: October 26, 2006
    Publication date: June 7, 2007
    Inventors: Shunsuke Shioya, Sotomitsu Ikeda
  • Publication number: 20070126044
    Abstract: In a circuit device having a field effect transistor and a capacitor, the capacitor is connected to at least one of a gate electrode, a source electrode and a drain electrode of a field effect transistor, the field effect transistor has a channel comprised of a first nano-wire, and the capacitor comprises a first electrode comprised of a second nano-wire having electroconductivity, a dielectric layer partly covering the peripheral face of the first electrode and a second electrode covering the peripheral face of the dielectric layer.
    Type: Application
    Filed: November 2, 2006
    Publication date: June 7, 2007
    Inventors: Shunsuke Shioya, Sotomitsu Ikeda
  • Publication number: 20050221147
    Abstract: A valve and a fuel cell using the same are provided, the valve having a fluid inlet, a fluid outlet, a flow path communicating therebetween, a valve element provided in the flow path, a diaphragm which is disposed so as to separate the inside from the outside of the flow path and which is to be deformed by the difference in pressure between the inside and the outside of the flow path, a valve shaft connecting between the valve element and the diaphragm, and an actuator provided for the diaphragm. In the valve described above, the valve element is displaced by at least one movement of the diaphragm and the actuator to open and close the valve. Accordingly, the valve has a simple structure which can be easily miniaturized and which is unlikely to be degraded even when a corrosive fluid flows through the valve.
    Type: Application
    Filed: March 31, 2005
    Publication date: October 6, 2005
    Applicant: Canon Kabushiki Kaisha
    Inventors: Shunsuke Shioya, Masaaki Shibata