Abstract: A character input device not completely occupying a screen, good in visibility, and enabling input of characters while reducing to a minimum the movement of the fingers and line of sight, which, in the case of input of for example the hiragana 50-character phonetic syllabary of the Japanese language, displays an initial block of the major group lead characters a (), ka (), sa (), ta (), na () on a first row of a character input region on a display screen and the block of the remaining major group lead characters ha (), ma (), ya (), ra (), wa () on the second row, allows movement of a focus position or character position by “left” and “right” keys (a ()?ka ()?sa ()? . . . ), switches the character focused to the block of ha (), ma (), ya (), ra (), wa () after the focus position reaches na (), allows switching between displayed characters by for example using the “down” key to move to the next character (for example, a ()?i ()?u ()? . . .

Abstract: In a solid-state image pick-up device in which a photoelectric converting section formed on a semiconductor substrate and a gate oxide film of a transfer path of a charge coupled device (CCD) which is close to the photoelectric converting section are constituted by a laminated film comprising a silicon oxide film (SiO) and a silicon nitride film (SiN), the gas oxide film has a single layer structure in which at least an end on the photoelectric converting section side of the gate oxide film does not contain the silicon nitride film.

Abstract: In a solid-state image pick-up device in which a photoelectric converting section formed on a semiconductor substrate and a gate oxide film of a transfer path of a charge coupled device (CCD) which is close to the photoelectric converting section are constituted by a laminated film comprising a silicon oxide film (SiO) and a silicon nitride film (SiN), the gas oxide film has a single layer structure in which at least an end on the photoelectric converting section side of the gate oxide film does not contain the silicon nitride film.

Abstract: A method of driving a CCD solid-state image pickup device, the device comprising: a plurality of vertical charge-transfer channels that vertically transfers signal charges responsive to amounts of light received; a signal-charge temporary accumulation section, provided at an end of each of the vertical charge-transfer channels, that is driven independently of driving of the vertical charge-transfer channels; and a horizontal charge-transfer channel through which signal charges transferred from the signal-charge temporary accumulation section are transferred to an output terminal side, wherein the method comprising performing vertical transfers of signal charges through the vertical charge-transfer channels during a period of a horizontal transfer of signal charges through the horizontal charge-transfer channel, while the horizontal transfer through the horizontal charge-transfer channel is brought to a temporary stop for each pulse-edge time of driving pulses to drive the vertical charge-transfer channels.

Abstract: A method of driving a solid-state imaging device is provided. The solid-state imaging device includes: a semiconductor substrate; a plurality of photoelectric converting elements arranged in a two-dimensional array on a light-receiving surface of the semiconductor substrate; and a charge transfer path disposed along each of columns of photoelectric converting elements, the charge transfer path reading out charges detected at each of photoelectric converting elements in a column of the photoelectric converting elements and transferring the charges, the photoelectric converting elements in the column thereof comprising two groups, each containing every other photoelectric converting element. Charges are read out from the two groups into the charge transfer path at a time difference between the two groups.

Abstract: A solid state image pickup device is provided which includes: a semiconductor substrate having a light reception region; a well being formed in the semiconductor substrate; charge accumulation regions disposed in the well in a matrix shape; a vertical transfer channel disposed in the well; a light shielding film formed above the semiconductor substrate; and a horizontal transfer channel connected to the vertical transfer channels, wherein the light reception region includes: a first region in which an opening is formed through the light shielding film above each of the charge accumulation regions; a second region in which an opening is not formed through the upper light shielding film; and a third region defined between the first and second regions along the column direction of the charge accumulation regions, the third region not having at least partially the well and not having an opening formed through the upper light shielding film.

Abstract: An integrated building production information system including design CAD (computer-aided-design) based on software of building, structure, and equipment, and databases built in the outside separately from the design CAD, the databases making an integrated DB (shared database)-CAD system of building, structure and equipment as an execution-linked system in DB-CAD's sharing of a standard database, wherein the integrated building production information system stores the information made compatible by three-dimensional superposition at the time of design into a shared database (DB) of the integrated DB-CAD system, and further receives and links information of this shared database to extemal systems such as a skeleton drawing CAD, a reinforcing bar and steel frame system and the like and produces execution information.

Abstract: It is an object to provide, with a high productivity, a dielectric thin film having a high degree of pore and a very great mechanical strength, and there are included a surfactant film forming step of forming a film including a surfactant on a surface of a substrate on which a thin film is to be formed, a vapor deposition step of causing the substrate to come in contact with a gas phase containing a silica derivative to form a thin film including the silica derivative, and a step of calcining the substrate having the thin film formed thereon and decomposing and removing the surfactant, the thin film being thus formed.

Abstract: A seal for an endless track has a cross section having a centerline parallel to an axis of the seal and a configuration symmetric with respect to the centerline of the cross section. The seal can include an elastically deformably configured portion having a cross section like alphabetical letter X, and a protrusion extending from an intersection of legs of letter X in a bushing-side direction further than a plane connecting bushing-side end portions of the legs of letter X. The protrusion has an end surface where the protrusion contacts the bushing. The seal can further include an embedding portion embedded in a space between legs of letter X, on a bushing-side of the intersection of the legs of letter X.

Abstract: A mobile phone is provided with a user dictionary to be used under privacy mode ON state and another user dictionary to be used under privacy mode OFF state. The two user dictionaries are automatically switched in conjunction with ON/OFF of the privacy mode. Further, the user dictionary used under privacy mode OFF state is prevented from being referred to under privacy mode ON state. This prevents information stored under privacy mode OFF state from being leaked.

Abstract: In a solid-state image pick-up device in which a photoelectric converting section formed on a semiconductor substrate and a gate oxide film of a transfer path of a charge coupled device (CCD) which is close to the photoelectric converting section are constituted by a laminated film comprising a silicon oxide film (SiO) and a silicon nitride film (SiN), the gas oxide film has a single layer structure in which at least an end on the photoelectric converting section side of the gate oxide film does not contain the silicon nitride film.

Abstract: In a solid-state image pick-up device in which a photoelectric converting section formed on a semiconductor substrate and a gate oxide film of a transfer path of a charge coupled device (CCD) which is close to the photoelectric converting section are constituted by a laminated film comprising a silicon oxide film (SiO) and a silicon nitride film (SiN), the gas oxide film has a single layer structure in which at least an end on the photoelectric converting section side of the gate oxide film does not contain the silicon nitride film.

Abstract: It is an object to provide, with a high productivity, a dielectric thin film having a high degree of pore and a very great mechanical strength, and there are included a surfactant film forming step of forming a film including a surfactant on a surface of a substrate on which a thin film is to be formed, a vapor deposition step of causing the substrate to come in contact with a gas phase containing a silica derivative to form a thin film including the silica derivative, and a step of calcining the substrate having the thin film formed thereon and decomposing and removing the surfactant, the thin film being thus formed.

Abstract: A slurry collection device 1 includes a ring-shaped barrier member 2 provided around a turntable T of a polishing machine E and a ring-shaped slurry collection container 3 provided around the barrier member 2. The turntable T is connected to an upper end of a main rotation shaft T1 that sticks out from a bottom portion of a sink S of the polishing machine E and is lifted from the bottom portion of the sink S. The slurry collection device 1 of the present invention is inserted between the turntable T and the sink S.

Abstract: According to the invention, by developing a function of linking pieces of information of CAD's with one another for improving design drawings in quality, the pieces of information can be unified, the compatibility of information can be obtained or the efficiency of a collating operation can be improved and thereby data being compatible and good in quality which are made at an execution design stage can be obtained and a work of taking the compatibility can be advanced and further can be performed easily in a short time, and, therefore, such effects lead to shortening of the whole process and furthermore make it possible to comprehensively improve the efficiency of building production by diverting and utilizing said data at estimation and execution stages after the execution design stage.

Abstract: In a solid-state image pick-up device in which a photoelectric converting section formed on a semiconductor substrate and a gate oxide film of a transfer path of a charge coupled device (CCD) which is close to the photoelectric converting section are constituted by a laminated film comprising a silicon oxide film (SiO) and a silicon nitride film (SiN), the gas oxide film has a single layer structure in which at least an end on the photoelectric converting section side of the gate oxide film does not contain the silicon nitride film.

Abstract: A seal for an endless track has a cross section having a centerline parallel to an axis of the seal and a configuration symmetric with respect to the centerline of the cross section. The seal can include an elastically deformably configured portion having a cross section like alphabetical letter X, and a protrusion extending from an intersection of legs of letter X in a bushing-side direction further than a plane connecting bushing-side end portions of the legs of letter X. The protrusion has an end surface where the protrusion contacts the bushing. The seal can further include an embedding portion embedded in a space between legs of letter X, on a bushing-side of the intersection of the legs of letter X.

Abstract: A character input device not completely occupying a screen, good in visibility, and enabling input of characters while reducing to a minimum the movement of the fingers and line of sight, which, in the case of input of for example the hiragana 50-character phonetic syllabary of the Japanese language, displays an initial block of the major group lead characters a , ka , sa , ta , na on a first row of a character input region on a display screen and the block of the remaining major group lead characters ha , ma , ya , ra , wa on the second row, allows movement of a focus position or character position by "left" and "right" keys (a → ka → sa → ...), switches the character focused to the block of ha , ma , ya , ra , wa after the focus position reaches na , allows switching between displayed characters by for example using the "down" key to move to the next character (for example, a → i → u → ...

Abstract: A slurry collection device 1 includes a ring-shaped barrier member 2 provided around a turntable T of a polishing machine E and a ring-shaped slurry collection container 3 provided around the barrier member 2. The turntable T is connected to an upper end of a main rotation shaft T1 that sticks out from a bottom portion of a sink S of the polishing machine E and is lifted from the bottom portion of the sink S. The slurry collection device 1 of the present invention is inserted between the turntable T and the sink S.