Abstract: A technique of etching Si on a substrate having Si and another material with a high selectivity using a simple gas system is provided. In an etching method, the substrate having the Si and another material is provided, and the Si is selectively etched over the above-described another material by supplying a germanium-containing gas as an etching gas to the substrate.

Abstract: The present disclosure is directed to a dry etching method for a substrate having a silicon compound film, including: plasmatizing a dry etching agent; and etching the silicon compound film with the plasmatized dry etching agent through a mask formed with a predetermined opening pattern on the silicon compound film, wherein the dry etching agent contains the following first to fourth gases; the first gas is at least one compound selected from the group consisting of iodinated fluorocarbon compounds and brominated fluorocarbon compounds; the second gas is an unsaturated fluorocarbon represented by CnFm; the third gas is an unsaturated hydrofluorocarbon represented by CxHyFz; and the fourth gas is an oxidizing gas.

Abstract: A technique of etching Si on a substrate having Si and another material with a high selectivity using a simple gas system is provided. In an etching method, the substrate having the Si and another material is provided, and the Si is selectively etched over the above-described another material by supplying a germanium-containing gas as an etching gas to the substrate.