Abstract: A processing system includes: a processing apparatus configured to process an object by irradiating the object with a processing beam; a measuring apparatus configured to measure positions of the object and the processing apparatus; and a control apparatus configured to control the processing apparatus. The processing apparatus includes: a first movement apparatus configured to change a position of a processing head that emits the processing beam; and a second movement apparatus on which the first movement apparatus is mounted and which is configured to move together with the first movement apparatus. The control apparatus controls a movement due to the second movement apparatus based on a measuring result by the measurement apparatus and model information related to a shape of the object.

Abstract: A charged particle optical system includes a permanent magnetic lens disposed closer to an object than a central point between a charged particle beam source and the object in an optical axis direction of the charged particle optical system, an electromagnetic lens disposed such that a position of at least a part of the electromagnetic lens overlaps the permanent magnetic lens in the optical axis direction of the charged particle optical system, and an electrostatic lens disposed such that a position of at least a part of the electrostatic lens overlaps at least one of the permanent magnetic lens and the electromagnetic lens in the optical axis direction of the charged particle optical system.

Abstract: An arithmetic device calculates the surface potential of a silicon layer by performing computation based on a mathematical expression and device parameters stored in a storage device. Likewise, the arithmetic device calculates the surface potential of a bulk layer under a buried oxide film when the silicon layer is in a partially depleted state and when the silicon is in a fully depleted state. The arithmetic device then performs computation based on the calculated surface potential of the silicon layer, the calculated surface potential of the bulk layer, and mathematical expressions stored in the storage device, and obtains the surface potential of the bulk layer by iterative calculation. The arithmetic device performs computation based on the surface potential of the bulk layer obtained by iterative calculation and mathematical expressions stored in the storage device, and calculates the lower surface potential of the silicon layer.

Abstract: An arithmetic device calculates the surface potential of a silicon layer by performing computation based on a mathematical expression and device parameters stored in a storage device. Likewise, the arithmetic device calculates the surface potential of a bulk layer under a buried oxide film when the silicon layer is in a partially depleted state and when the silicon is in a fully depleted state. The arithmetic device then performs computation based on the calculated surface potential of the silicon layer, the calculated surface potential of the bulk layer, and mathematical expressions stored in the storage device, and obtains the surface potential of the bulk layer by, iterative calculation. The arithmetic device performs computation based on the surface potential of the bulk layer obtained by iterative calculation and mathematical expressions stored in the storage device, and calculates the lower surface potential of the silicon layer.