Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first region, and a second region. The second electrode is separated from the first electrode. The first region includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a gate electrode, a fourth semiconductor region of the second conductivity type, a fifth semiconductor region of the first conductivity type, and a sixth semiconductor region of the first conductivity type. The fifth semiconductor region, located between the fourth semiconductor region and a portion of the third semiconductor region, has a higher first-conductivity-type impurity concentration than the third semiconductor region.

Abstract: According to one embodiment, a semiconductor device includes first and second electrodes, and first and second regions. The first region includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a plurality of third semiconductor regions of the first conductivity type, a gate electrode, a conductive part, a fourth semiconductor region of the second conductivity type, a fifth semiconductor region of the first conductivity type, and a sixth semiconductor region of the second conductivity type. The gate electrode faces one of the plurality of third semiconductor regions via a gate insulating layer. The conductive part faces another one of the plurality of third semiconductor regions via an insulating layer, and is electrically connected with the second electrode. The fourth and six semiconductor regions are located on the one and the other one of the plurality of third semiconductor regions, respectively.

Abstract: A semiconductor device according to an embodiment includes a transistor region, a diode region, and a termination region surrounding the transistor region and the diode region. The transistor region includes first trenches and first conductive layers in the first trenches. The diode region includes second trenches and second conductive layers in the second trenches. The termination region includes a third trench, a first electrode pad electrically connected to the first conductive layers in at least a part of the first trench, and a second electrode pad electrically connected to a second conductive layer in a second trench closest to the third trench among the second trenches.

Abstract: According to one embodiment, a semiconductor device includes first and second electrodes, and first and second regions. The first region includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a plurality of third semiconductor regions of the first conductivity type, a gate electrode, a conductive part, a fourth semiconductor region of the second conductivity type, a fifth semiconductor region of the first conductivity type, and a sixth semiconductor region of the second conductivity type. The gate electrode faces one of the plurality of third semiconductor regions via a gate insulating layer. The conductive part faces another one of the plurality of third semiconductor regions via an insulating layer, and is electrically connected with the second electrode. The fourth and six semiconductor regions are located on the one and the other one of the plurality of third semiconductor regions, respectively.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first region, and a second region. The second electrode is separated from the first electrode. The first region includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a gate electrode, a fourth semiconductor region of the second conductivity type, a fifth semiconductor region of the first conductivity type, and a sixth semiconductor region of the first conductivity type. The fifth semiconductor region, located between the fourth semiconductor region and a portion of the third semiconductor region, has a higher first-conductivity-type impurity concentration than the third semiconductor region.