Abstract: The invention relates to an active matrix liquid crystal display device which uses a switching device to control a pixel, and an object is to provide a liquid crystal display device which has an excellent viewing angle property and high brightness and a fabrication method of the same. A TFT substrate has a structure which reduces the film thickness of a protective insulating film in a control capacitance part in which control capacitance is formed and the film thickness of a protective insulating film in an auxiliary capacitance part in which auxiliary capacitance is formed thinner than the film thickness of a protective insulating film which covers a TFT and the other elements.

Abstract: The invention relates to an active matrix liquid crystal display device which uses a switching device to control a pixel, and an object is to provide a liquid crystal display device which has an excellent viewing angle property and high brightness and a fabrication method of the same. A TFT substrate has a structure which reduces the film thickness of a protective insulating film in a control capacitance part in which control capacitance is formed and the film thickness of a protective insulating film in an auxiliary capacitance part in which auxiliary capacitance is formed thinner than the film thickness of a protective insulating film which covers a TFT and the other elements.

Abstract: First and second sub-picture element electrodes, a buffer capacitance, and a first to third TFTs are formed in each picture element; the first and second TFTs are driven by a signal supplied to an nth gate bus line; the third TFT is driven by a signal supplied to an (n+1)th gate bus line; the first sub-picture element electrode is connected to the first and third TFTs; the second sub-picture element electrode is connected to the second TFT; a drain electrode of the third TFT is connected to an upper electrode of the buffer capacitance; and a lower electrode of this buffer capacitance is connected to the (n+1)th gate bus line.

Abstract: First and second sub-picture element electrodes, a buffer capacitance, and a first to third TFTs are formed in each picture element; the first and second TFTs are driven by a signal supplied to an nth gate bus line; the third TFT is driven by a signal supplied to an (n+1)th gate bus line; the first sub-picture element electrode is connected to the first and third TFTs; the second sub-picture element electrode is connected to the second TFT; a drain electrode of the third TFT is connected to an upper electrode of the buffer capacitance; and a lower electrode of this buffer capacitance is connected to the (n+1)th gate bus line.

Abstract: First and second sub-picture element electrodes, a buffer capacitance, and a first to third TFTs are formed in each picture element; the first and second TFTs are driven by a signal supplied to an nth gate bus line; the third TFT is driven by a signal supplied to an (n+1)th gate bus line; the first sub-picture element electrode is connected to the first and third TFTs; the second sub-picture element electrode is connected to the second TFT; a drain electrode of the third TFT is connected to an upper electrode of the buffer capacitance; and a lower electrode of this buffer capacitance is connected to the (n+1)th gate bus line.

Abstract: The invention relates to an active matrix liquid crystal display device which uses a switching device to control a pixel, and an object is to provide a liquid crystal display device which has an excellent viewing angle property and high brightness and a fabrication method of the same. A TFT substrate has a structure which reduces the film thickness of a protective insulating film in a control capacitance part in which control capacitance is formed and the film thickness of a protective insulating film in an auxiliary capacitance part in which auxiliary capacitance is formed thinner than the film thickness of a protective insulating film which covers a TFT and the other elements.