Abstract: An overcurrent protection circuit that limits a current to be monitored based on a current limit signal includes: a first transistor and a second transistor configured to form an amplifier input stage that receives input of a detection signal according to the current to be monitored; a third transistor configured to generate a current output signal according to a difference between the detection signal and a reference signal, and configured to form an amplifier output stage that inputs the current output signal as a negative feedback to the amplifier input stage; and a current mirror circuit configured to generate the current limit signal by replicating a signal based on the current output signal.

Abstract: A vehicle control apparatus includes a traveling motor and an accelerator operation part. The traveling motor is coupled to a wheel. The accelerator operation part is to be operated by a driver. The vehicle control apparatus includes a control system including a processor and a memory communicably coupled to each other. A control mode adapted to control the traveling motor includes a torque control mode of feedback-controlling a motor torque and a speed control mode of feedback-controlling a motor rotation speed. When a motor lock is detected, the control system detects an operation amount of the accelerator operation part and calculates a switching threshold by adding a predetermined amount to the operation amount. The control system switches the control mode to the speed control mode when: the accelerator operation part is further operated while the motor lock has continued; and the operation amount exceeds the switching threshold.

Abstract: In a manufacturing method of a semiconductor device including a substrate having a front surface and a rear surface, and a film attached to the rear surface, the film is attached on the rear surface, a rear surface side groove is provided by half-cutting the substrate from the rear surface together with the film, a protective member is attached to the film after the rear surface side groove is provided, and a front surface side groove connected to the rear surface side groove is provided by dicing the substrate from the front surface after the protective member is attached.

Abstract: In a manufacturing method of a semiconductor device including a substrate having a front surface and a rear surface, and a film attached to the rear surface, the film is attached on the rear surface, a rear surface side groove is provided by half-cutting the substrate from the rear surface together with the film, a protective member is attached to the film after the rear surface side groove is provided, and a front surface side groove connected to the rear surface side groove is provided by dicing the substrate from the front surface after the protective member is attached.