Abstract: Accuracy of results obtained by integrally processing information acquired by different sensors is improved. A solid-state imaging device according to an embodiment includes: a first sensor that detects light in a first wavelength band; and a second sensor that detects light of a second wavelength band different from the first wavelength band, in which the first sensor includes a first pixel (110) that detects light of the first wavelength band in incident light, and the second sensor includes a second pixel (110) that detects light in the second wavelength band that has transmitted through the first pixel among the incident light.

Abstract: A power distribution apparatus for an electric vehicle includes a power distribution mechanism configured to distribute power output from an electric motor to front and rear wheels, and a controller configured to control the power distribution mechanism. The power distribution mechanism includes a first clutch configured to fix a power distribution ratio during straight traveling to a first distribution ratio at which first power distributed to the rear wheels and second power distributed to the front wheels are nearly same, and a second clutch configured to fix the power distribution ratio during straight traveling to a second distribution ratio at which the first power is larger than the second power. The controller is configured set the second clutch to an engaged state and sets the first clutch to a half-engaged state during regenerative braking.

Abstract: In a manufacturing method of a semiconductor device including a substrate having a front surface and a rear surface, and a film attached to the rear surface, the film is attached on the rear surface, a rear surface side groove is provided by half-cutting the substrate from the rear surface together with the film, a protective member is attached to the film after the rear surface side groove is provided, and a front surface side groove connected to the rear surface side groove is provided by dicing the substrate from the front surface after the protective member is attached.

Abstract: In a manufacturing method of a semiconductor device including a substrate having a front surface and a rear surface, and a film attached to the rear surface, the film is attached on the rear surface, a rear surface side groove is provided by half-cutting the substrate from the rear surface together with the film, a protective member is attached to the film after the rear surface side groove is provided, and a front surface side groove connected to the rear surface side groove is provided by dicing the substrate from the front surface after the protective member is attached.