Patents by Inventor Shunya KAWAGUCHI

Shunya KAWAGUCHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SILICON WAFER AND MANUFACTURING METHOD OF THE SAME
    Publication number: 20230307505
    Abstract: A silicon wafer having a layer of oxygen precipitates and method of manufacturing thereof wherein the wafer exhibiting robustness characterized as having a ratio of a first average density from a first treatment that to a second average density from a second treatment is between 0.74 to 1.02, wherein the first treatment includes heating the wafer or a portion of the wafer at about 1150° C. for about 2 minutes and then between about 950 to 1000° C. for about 16 hours, and the second treatment includes heating the wafer or a portion of the wafer at about 780° C. for about 3 hours and then between about 950 to 1000° C. for about 16 hours. The wafer exhibits heretofore unattainable uniformity wherein a ratio of an oxygen precipitate density determined from any one cubic centimeter in the BMD layer of the wafer to another oxygen precipitate density from any other one cubic centimeter in the BMD layer of the wafer is in a range of 0.77 to 1.30.
    Type: Application
    Filed: June 5, 2023
    Publication date: September 28, 2023
    Applicant: SUMCO CORPORATION
    Inventors: Kazuhisa TORIGOE, Toshiaki ONO, Shunya KAWAGUCHI
  • Silicon wafer and manufacturing method of the same
    Patent number: 11695048
    Abstract: A silicon wafer having a layer of oxygen precipitates and method of manufacturing thereof wherein the wafer exhibiting robustness characterized as having a ratio of a first average density from a first treatment that to a second average density from a second treatment is between 0.74 to 1.02, wherein the first treatment includes heating the wafer or a portion of the wafer at about 1150° C. for about 2 minutes and then between about 950 to 1000° C. for about 16 hours, and the second treatment includes heating the wafer or a portion of the wafer at about 780° C. for about 3 hours and then between about 950 to 1000° C. for about 16 hours. The wafer exhibits heretofore unattainable uniformity wherein a ratio of an oxygen precipitate density determined from any one cubic centimeter in the BMD layer of the wafer to another oxygen precipitate density from any other one cubic centimeter in the BMD layer of the wafer is in a range of 0.77 to 1.30.
    Type: Grant
    Filed: April 8, 2021
    Date of Patent: July 4, 2023
    Assignee: SUMCO CORPORATION
    Inventors: Kazuhisa Torigoe, Toshiaki Ono, Shunya Kawaguchi
  • SILICON WAFER AND MANUFACTURING METHOD OF THE SAME
    Publication number: 20210320177
    Abstract: A silicon wafer having a layer of oxygen precipitates and method of manufacturing thereof wherein the wafer exhibiting robustness characterized as having a ratio of a first average density from a first treatment that to a second average density from a second treatment is between 0.74 to 1.02, wherein the first treatment includes heating the wafer or a portion of the wafer at about 1150° C. for about 2 minutes and then between about 950 to 1000° C. for about 16 hours, and the second treatment includes heating the wafer or a portion of the wafer at about 780° C. for about 3 hours and then between about 950 to 1000° C. for about 16 hours. The wafer exhibits heretofore unattainable uniformity wherein a ratio of an oxygen precipitate density determined from any one cubic centimeter in the BMD layer of the wafer to another oxygen precipitate density from any other one cubic centimeter in the BMD layer of the wafer is in a range of 0.77 to 1.30.
    Type: Application
    Filed: April 8, 2021
    Publication date: October 14, 2021
    Applicant: SUMCO CORPORATION
    Inventors: Kazuhisa TORIGOE, Toshiaki ONO, Shunya KAWAGUCHI