Abstract: A semiconductor device includes a first semiconductor element, a first object, a sealing resin and a covering part. The first semiconductor element includes a first electrode. The first object includes a first surface facing the first electrode. The sealing resin covers the first semiconductor element and the first object. The covering part is interposed between the first electrode and the first surface and contains a material having a higher thermal conductivity than the sealing resin.

Abstract: A semiconductor device includes: a semiconductor element that includes an element body containing a semiconductor, and a first electrode disposed on the element body; a first wire joined to the first electrode; a sealing resin that covers the semiconductor element and the first wire; and a covering portion interposed between the first electrode and the sealing resin. The first wire includes a first portion that extends from an inside of the first electrode toward an outside of the first electrode as viewed in a thickness direction of the semiconductor. The covering portion contains a material having a higher thermal conductivity than the sealing resin. The covering portion is in contact with the first portion of the first wire.

Abstract: A semiconductor device includes a semiconductor element, a first lead, a second lead, and a first wire. The bonding-pad reverse surface is offset from the die-pad reverse surface toward the die-pad obverse surface-side in the z direction. The first wire is bonded to the first electrode and the bonding-pad obverse surface. The bonding pad portion includes a single first portion. The first portion is connected to the bonding-pad reverse surface, is surrounded by the bonding-pad reverse surface as viewed in the z direction, and includes a part present at a position different from the bonding-pad reverse surface in the z direction.

Abstract: A semiconductor device includes a semiconductor element, a sealing resin and a covering portion. The semiconductor element includes an element body containing a semiconductor, and a first electrode disposed on the element body. The sealing resin covers the semiconductor element. The covering portion is interposed between the first electrode and the sealing resin. The covering portion contains a material having a higher thermal conductivity than the sealing resin. The first electrode of the semiconductor element includes a groove portion held in contact with the covering portion.