Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; and a phase shift film that shifts a phase of the EUV light, in this order. The phase shift film contains a compound containing ruthenium (Ru) and an element X2 different from Ru. A melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy a relation of 0.625MP1+MP2?1000.

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; and a phase shift film that shifts a phase of the EUV light, in this order. The phase shift film contains a compound containing ruthenium (Ru) and an element X2 different from Ru. A melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy a relation of 0.625 MP1+MP2?1000.

Abstract: A laminate includes a transparent substrate having a first surface, and a laminated film provided on the first surface of the transparent substrate, wherein the laminated film includes, in a descending order of closeness to the first surface, a first dielectric layer including silicon nitride or zinc oxide or including silicon nitride and zinc oxide, a first layer including titanium oxide and provided on or above the first dielectric layer, a first barrier layer including nickel and chromium and provided on or above the first layer, and a silver-containing metal layer provided directly on the first barrier layer.

Abstract: A laminated body includes a transparent substrate having a laminated film. The laminated film includes a dielectric layer containing silicon nitride, a barrier layer composed of a single film or two or more films, and a metal layer containing silver. The barrier layer has a thickness of from 0.1 nm to 10 nm. Each film of the barrier layer includes a material having a crystal structure of a face-centered cubic structure with a lattice constant of from 3.5 to 4.2, a hexagonal close-packed structure with a lattice constant of from 2.6 to 3.3, a body-centered cubic structure with a lattice constant of from 2.9 to 3.2, or a tetragonal crystal with a lattice constant of from 2.9 to 4.4. The metal layer has a thickness of from 7 nm to 25 nm. An orientation index P of the metal layer falls within a range from 4.5 to 20.