Patents by Inventor Shunya TAKI

Shunya TAKI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12032280
    Abstract: A reflective mask blank includes: a substrate; a multilayer reflective film configured to reflect EUV light; a protective film; and a phase shift film configured to shift a phase of EUV light, in this order, in which the phase shift film includes a first layer including one or more first elements selected from a group consisting of ruthenium, rhenium, iridium, silver, osmium, gold, palladium, and platinum, and a second layer including one or more second elements selected from a group consisting of tantalum and chromium, the first layer includes a region A1 in which a content of an element having a highest content among the one or more first elements increases in a thickness direction from a side opposite to the second layer toward the second layer, and the region A1 is present adjacent to the second layer.
    Type: Grant
    Filed: December 19, 2023
    Date of Patent: July 9, 2024
    Assignee: AGC INC.
    Inventors: Hiroshi Hanekawa, Taiga Fudetani, Yusuke Ono, Shunya Taki
  • Publication number: 20240176224
    Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.
    Type: Application
    Filed: December 22, 2023
    Publication date: May 30, 2024
    Applicant: AGC Inc.
    Inventors: Daijiro AKAGI, Shunya TAKI, Takuma KATO, Ichiro ISHIKAWA, Kenichi SASAKI
  • Publication number: 20240168370
    Abstract: A reflective mask blank containing a substrate, a multilayer reflective film that reflects EUV light, and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, and the phase shift film being arranged in this order. The phase shift film contains a compound containing Ru and Cr, an element ratio between Cr and Ru (Cr:Ru) in the phase shift film is 5:95 to 42:58, and a melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy the following relation (1): 0.625 MP1+MP2?1000??(1).
    Type: Application
    Filed: October 20, 2023
    Publication date: May 23, 2024
    Applicant: AGC Inc.
    Inventors: Shunya TAKI, Hiroaki IWAOKA, Daijiro AKAGI, Ichiro ISHIKAWA
  • Publication number: 20240160097
    Abstract: A reflective mask blank includes: a substrate; a multilayer reflective film configured to reflect EUV light; a protective film; and a phase shift film configured to shift a phase of EUV light, in this order, in which the phase shift film includes a first layer including one or more first elements selected from a group consisting of ruthenium, rhenium, iridium, silver, osmium, gold, palladium, and platinum, and a second layer including one or more second elements selected from a group consisting of tantalum and chromium, the first layer includes a region A1 in which a content of an element having a highest content among the one or more first elements increases in a thickness direction from a side opposite to the second layer toward the second layer, and the region A1 is present adjacent to the second layer.
    Type: Application
    Filed: December 19, 2023
    Publication date: May 16, 2024
    Applicant: AGC INC.
    Inventors: Hiroshi HANEKAWA, Taiga FUDETANI, Yusuke ONO, Shunya TAKI
  • Publication number: 20240152044
    Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a phase shift film that shifts a phase of the EUV light, in this order. An opening pattern is to be formed in the phase shift film. The phase shift film has a refractive index of 0.920 or less with respect to the EUV light, an extinction coefficient of 0.024 or more with respect to the EUV light, a thickness of 50 nm or less, a normalized image log slope of 2.9 or more for a transferred image when a line-and-space pattern is formed on a target substrate, and a tolerance range of a focal depth of the transferred image is 60 nm or less.
    Type: Application
    Filed: January 12, 2024
    Publication date: May 9, 2024
    Applicant: AGC Inc.
    Inventors: Daijiro AKAGI, Hiroaki IWAOKA, Shunya TAKI, Kenichi SASAKI, Ichiro ISHIKAWA, Toshiyuki UNO
  • Patent number: 11914284
    Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.
    Type: Grant
    Filed: July 3, 2023
    Date of Patent: February 27, 2024
    Assignee: AGC Inc.
    Inventors: Daijiro Akagi, Shunya Taki, Takuma Kato, Ichiro Ishikawa, Kenichi Sasaki
  • Patent number: 11829065
    Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; and a phase shift film that shifts a phase of the EUV light, in this order. The phase shift film contains a compound containing ruthenium (Ru) and an element X2 different from Ru. A melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy a relation of 0.625MP1+MP2?1000.
    Type: Grant
    Filed: March 31, 2023
    Date of Patent: November 28, 2023
    Assignee: AGC Inc.
    Inventors: Shunya Taki, Hiroaki Iwaoka, Daijiro Akagi, Ichiro Ishikawa
  • Publication number: 20230350285
    Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.
    Type: Application
    Filed: July 3, 2023
    Publication date: November 2, 2023
    Applicant: AGC Inc.
    Inventors: Daijiro AKAGI, Shunya TAKI, Takuma KATO, Ichiro ISHIKAWA, Kenichi SASAKI
  • Publication number: 20230251564
    Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; and a phase shift film that shifts a phase of the EUV light, in this order. The phase shift film contains a compound containing ruthenium (Ru) and an element X2 different from Ru. A melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy a relation of 0.625 MP1+MP2?1000.
    Type: Application
    Filed: March 31, 2023
    Publication date: August 10, 2023
    Applicant: AGC Inc.
    Inventors: Shunya TAKI, Hiroaki IWAOKA, Daijiro AKAGI, Ichiro ISHIKAWA
  • Publication number: 20220184927
    Abstract: A laminate includes a transparent substrate having a first surface, and a laminated film provided on the first surface of the transparent substrate, wherein the laminated film includes, in a descending order of closeness to the first surface, a first dielectric layer including silicon nitride or zinc oxide or including silicon nitride and zinc oxide, a first layer including titanium oxide and provided on or above the first dielectric layer, a first barrier layer including nickel and chromium and provided on or above the first layer, and a silver-containing metal layer provided directly on the first barrier layer.
    Type: Application
    Filed: February 22, 2022
    Publication date: June 16, 2022
    Applicant: AGC Inc.
    Inventors: Shunya TAKI, Naoko OKADA
  • Publication number: 20220145697
    Abstract: A laminated body includes a transparent substrate having a laminated film. The laminated film includes a dielectric layer containing silicon nitride, a barrier layer composed of a single film or two or more films, and a metal layer containing silver. The barrier layer has a thickness of from 0.1 nm to 10 nm. Each film of the barrier layer includes a material having a crystal structure of a face-centered cubic structure with a lattice constant of from 3.5 to 4.2, a hexagonal close-packed structure with a lattice constant of from 2.6 to 3.3, a body-centered cubic structure with a lattice constant of from 2.9 to 3.2, or a tetragonal crystal with a lattice constant of from 2.9 to 4.4. The metal layer has a thickness of from 7 nm to 25 nm. An orientation index P of the metal layer falls within a range from 4.5 to 20.
    Type: Application
    Filed: January 20, 2022
    Publication date: May 12, 2022
    Applicant: AGC Inc.
    Inventors: Shunya TAKI, Naoko OKADA, Yasuyuki TAKIMOTO, Haruhiko YOSHINO