Patents by Inventor Shuo-Cheng Wang

Shuo-Cheng Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of reducing thick film stress of spin-on dielectric and the resulting sandwich dielectric structure
    Patent number: 6903029
    Abstract: The present invention provides a technique to reduce a stress of thick spin-on dielectric layer by forming a sandwich dielectric structure, wherein a first dielectric layer is formed on a substrate by spin coating, a liquid phase deposited (LPD) silica layer is formed the first dielectric layer, and a second dielectric layer is formed on the LPD silica layer by spin coating. The LPD silica layer can be further subjected to a nitrogen plasma treatment to enhance its thermal stability and anti-water penetration ability.
    Type: Grant
    Filed: July 19, 2004
    Date of Patent: June 7, 2005
    Assignee: National Science Council
    Inventors: Ching-Fa Yeh, Yueh-Chuan Lee, Chih-Chuan Hsu, Kwo-Hau Wu, Shuo-Cheng Wang
  • Method of reducing thick film stress of spin-on dielectric and the resulting sandwich dielectric structure
    Publication number: 20040258932
    Abstract: The present invention provides a technique to reduce a stress of thick spin-on dielectric layer by forming a sandwich dielectric structure, wherein a first dielectric layer is formed on a substrate by spin coating, a liquid phase deposited (LPD) silica layer is formed the first dielectric layer, and a second dielectric layer is formed on the LPD silica layer by spin coating. The LPD silica layer can be further subjected to a nitrogen plasma treatment to enhance its thermal stability and anti-water penetration ability.
    Type: Application
    Filed: July 19, 2004
    Publication date: December 23, 2004
    Applicant: National Science Council
    Inventors: Ching-Fa Yeh, Yueh-Chuan Lee, Chih-Chuan Hsu, Kwo-Hau Wu, Shuo-Cheng Wang
  • Method of reducing thick film stress of spin-on dielectric and the resulting sandwich dielectric structure
    Patent number: 6774461
    Abstract: The present invention provides a technique to reduce a stress of thick spin-on dielectric layer by forming a sandwich dielectric structure, wherein a first dielectric layer is formed on a substrate by spin coating, a liquid phase deposited (LPD) silica layer is formed the first dielectric layer, and a second dielectric layer is formed on the LPD silica layer by spin coating. The LPD silica layer can be further subjected to a nitrogen plasma treatment to enhance its thermal stability and anti-water penetration ability.
    Type: Grant
    Filed: February 15, 2002
    Date of Patent: August 10, 2004
    Assignee: National Science Council
    Inventors: Ching-Fa Yeh, Yueh-Chuan Lee, Chih-Chuan Hsu, Kwo-Hau Wu, Shuo-Cheng Wang
  • Method of reducing thick film stress of spin-on dielectric and the resulting sandwich dielectric structure
    Publication number: 20020142580
    Abstract: The present invention provides a technique to reduce a stress of thick spin-on dielectric layer by forming a sandwich dielectric structure, wherein a first dielectric layer is formed on a substrate by spin coating, a liquid phase deposited (LPD) silica layer is formed the first dielectric layer, and a second dielectric layer is formed on the LPD silica layer by spin coating. The LPD silica layer can be further subjected to a nitrogen plasma treatment to enhance its thermal stability and anti-water penetration ability.
    Type: Application
    Filed: February 15, 2002
    Publication date: October 3, 2002
    Applicant: NATIONAL SCIENCE COUNCIL
    Inventors: Ching-Fa Yeh, Yueh-Chuan Lee, Chih-Chuan Hsu, Kwo-Hau Wu, Shuo-Cheng Wang