Abstract: New methods and kits for treating diseases caused or exacerbated by overactivated EphA4 signaling are provided. The method includes administering to a subject in need thereof an effective amount of a small molecule compound inhibitor for EphA4 signaling. Also provided are methods for identifying additional compounds as therapeutic agents useful for treating conditions involving overly active EphA4 signaling.

Abstract: The present disclosure provides a plurality of the compounds. The compounds are capable of inhibiting Cathepsin L (CatL). A composition including at least one of these compounds is also provided. A method for treating or preventing one or more CatL-related diseases in a subject is further provided. The method may include administering the composition to the subject.

Abstract: New methods and kits for treating diseases caused or exacerbated by overactivated EphA4 signaling are provided. The method includes administering to a subject in need thereof an effective amount of a small molecule compound inhibitor for EphA4 signaling. Also provided are methods for identifying additional compounds as therapeutic agents useful for treating conditions involving overly active EphA4 signaling.

Abstract: Systems and methods to detect when the external magnetic field becomes higher than the saturation field of AMR material are described. Approaches include saturation detection by combining sensors with different full-scale ranges, saturation detection using DC current and saturation detection by arranging sensitive axes at 45° offsets.

Abstract: A three-axis magnetic sensor or magnetometer is provided. Two magnetic sensor Wheatstone bridges using barber pole AMR structures are fabricated on opposite sides of a bump structure formed on a substrate to provide surfaces that are at a predetermined angle with respect to the flat surface of the substrate. The bridge assembly is oriented along the Y axis and the bridges are interconnected such that Y and Z channel signals can be produced by processing of the bridge signals. The X channel signals are provided by an X axis sensor provided on the level surface of the substrate.

Abstract: Provided is the discovery of the role of EphA4 signaling in neurodegenerative disorders involving ?-amyloid induced neurotoxicity such as Alzheimer's Disease. New therapeutic methods, therapeutic agents, and kits for treating diseases caused or exacerbated by overactivated EphA4 signaling are provided. Also provided are methods for identifying additional compounds as therapeutic agents useful for treating conditions involving overly active EphA4 signaling.

Abstract: Provided is the discovery of the role of EphA4 signaling in neurodegenerative disorders involving ?-amyloid induced neurotoxicity such as Alzheimer's Disease. New therapeutic methods, therapeutic agents, and kits for treating diseases caused or exacerbated by overactivated EphA4 signaling are provided. Also provided are methods for identifying additional compounds as therapeutic agents useful for treating conditions involving overly active EphA4 signaling.

Abstract: A three-axis magnetic sensor or magnetometer is provided. Two magnetic sensor Wheatstone bridges using barber pole AMR structures are fabricated on opposite sides of a bump structure formed on a substrate to provide surfaces that are at a pre-determined angle with respect to the flat surface of the substrate. The bridge assembly is oriented along the Y axis and the bridges are interconnected such that Y and Z channel signals can be produced by processing of the bridge signals. The X channel signals are provided by an X axis sensor provided on the level surface of the substrate.

Abstract: A method to laser anneal a silicon stack (or a silicon-rich alloy) including a heavily doped region buried beneath an undoped or lightly doped region is disclosed. By F selecting laser energy at a wavelength that tends to be transmitted by crystalline silicon and absorbed by amorphous silicon, crystallization progresses through the silicon layers in a manner that minimizes or prevents diffusion of dopants upward from the doped region to the undoped or lightly doped region. In preferred embodiments, the laser energy is pulsed, and a thermally conductive structure beneath the heavily doped layer dissipates heat, helping to control the anneal and limit dopant diffusion.

Abstract: A method is disclosed to form a large-grain, lightly p-doped polysilicon film suitable for use as a channel region in thin film transistors. The film is preferably deposited lightly in situ doped with boron atoms by an LPCVD method at temperatures sufficiently low that the film is amorphous as deposited. After deposition, such a film contains an advantageous balance of boron, which promotes crystallization, and hydrogen, which retards crystallization. The film is then preferably crystallized by a low-temperature anneal at, for example, about 560 degrees for about twelve hours. Alternatively, crystallization may occur during an oxidation step performed, for example at about 825 degrees for about sixty seconds. The oxidation step forms a gate oxide for a thin film transistor device, for example a tunneling oxide for a SONOS memory thin film transistor device.

Abstract: A method to enhance grain size in polysilicon films while avoiding formation of hemispherical grains (HSG) is disclosed. The method begins by depositing a first amorphous silicon film, then depositing silicon nuclei, which will act as nucleation sites, on the amorphous film. After deposition of silicon nuclei, crystallization, and specifically HSG, is prevented by lowering temperature and/or raising pressure. Next a second amorphous silicon layer is deposited over the first layer and the nuclei. Finally an anneal is performed to induce crystallization from the embedded nuclei. Thus grains are formed from the silicon bulk, rather than from the surface, HSG is avoided, and a smooth polysilicon film with enhanced grain size is produced.

Abstract: A method to laser anneal a silicon stack (or a silicon-rich alloy) including a heavily doped region buried beneath an undoped or lightly doped region is disclosed. By F selecting laser energy at a wavelength that tends to be transmitted by crystalline silicon and absorbed by amorphous silicon, crystallization progresses through the silicon layers in a manner that minimizes or prevents diffusion of dopants upward from the doped region to the undoped or lightly doped region. In preferred embodiments, the laser energy is pulsed, and a thermally conductive structure beneath the heavily doped layer dissipates heat, helping to control the anneal and limit dopant diffusion.

Abstract: A method to enhance grain size in polysilicon films while avoiding formation of hemispherical grains (HSG) is disclosed. The method begins by depositing a first amorphous silicon film, then depositing silicon nuclei, which will act as nucleation sites, on the amorphous film. After deposition of silicon nuclei, crystallization, and specifically HSG, is prevented by lowering temperature and/or raising pressure. Next a second amorphous silicon layer is deposited over the first layer and the nuclei. Finally an anneal is performed to induce crystallization from the embedded nuclei. Thus grains are formed from the silicon bulk, rather than from the surface, HSG is avoided, and a smooth polysilicon film with enhanced grain size is produced.

Abstract: A method to create a polysilicon layer with large grains and uniform grain density is described. A first amorphous silicon layer is formed. A crystallizing agent is selectively introduced in a substantially symmetric pattern, preferably symmetric in two dimensions, across an area of the first amorphous layer. The crystallizing agent may be, for example, silicon nuclei, germanium, or laser energy. A mask layer is formed on the amorphous silicon layer, and holes etched in the mask layer in a symmetric pattern to expose the amorphous layer to, for example, silicon nuclei or germanium) only in the holes. The mask layer is removed and a second amorphous layer formed on the first. If laser energy is used, no mask layer or second amorphous layer is generally used. The wafer is annealed to form a polysilicon layer with substantially no amorphous silicon remaining between the grains.

Abstract: A method to enhance grain size in polysilicon films while avoiding formation of hemispherical grains (HSG) is disclosed. The method begins by depositing a first amorphous silicon film, then depositing silicon nuclei, which will act as nucleation sites, on the amorphous film. After deposition of silicon nuclei, crystallization, and specifically HSG, is prevented by lowering temperature and/or raising pressure. Next a second amorphous silicon layer is deposited over the first layer and the nuclei. Finally an anneal is performed to induce crystallization from the embedded nuclei. Thus grains are formed from the silicon bulk, rather than from the surface, HSG is avoided, and a smooth polysilicon film with enhanced grain size is produced.

Abstract: A method to create a polysilicon layer with large grains and uniform grain density is described. A first amorphous silicon layer is formed. A crystallizing agent is selectively introduced in a substantially symmetric pattern, preferably symmetric in two dimensions, across an area of the first amorphous layer. The crystallizing agent may be, for example, silicon nuclei, germanium, or laser energy. A mask layer is formed on the amorphous silicon layer, and holes etched in the mask layer in a symmetric pattern to expose the amorphous layer to, for example, silicon nuclei or germanium) only in the holes. The mask layer is removed and a second amorphous layer formed on the first. If laser energy is used, no mask layer or second amorphous layer is generally used. The wafer is annealed to form a polysilicon layer with substantially no amorphous silicon remaining between the grains.

Abstract: A method is disclosed to form a large-grain, lightly p-doped polysilicon film suitable for use as a channel region in thin film transistors. The film is preferably deposited lightly in situ doped with boron atoms by an LPCVD method at temperatures sufficiently low that the film is amorphous as deposited. After deposition, such a film contains an advantageous balance of boron, which promotes crystallization, and hydrogen, which retards crystallization. The film is then preferably crystallized by a low-temperature anneal at, for example, about 560 degrees for about twelve hours. Alternatively, crystallization may occur during an oxidation step performed, for example at about 825 degrees for about sixty seconds. The oxidation step forms a gate oxide for a thin film transistor device, for example a tunneling oxide for a SONOS memory thin film transistor device.

Abstract: A method to create a polysilicon layer with large grains and uniform grain density is described. A first amorphous silicon layer is formed. A crystallizing agent is selectively introduced in a substantially symmetric pattern, preferably symmetric in two dimensions, across an area of the first amorphous layer. The crystallizing agent may be, for example, silicon nuclei, germanium, or laser energy. A mask layer is formed on the amorphous silicon layer, and holes etched in the mask layer in a symmetric pattern to expose the amorphous layer to, for example, silicon nuclei or germanium) only in the holes. The mask layer is removed and a second amorphous layer formed on the first. If laser energy is used, no mask layer or second amorphous layer is generally used. The wafer is annealed to form a polysilicon layer with substantially no amorphous silicon remaining between the grains.

Abstract: A method to enhance grain size in polysilicon films while avoiding formation of hemispherical grains (HSG) is disclosed. The method begins by depositing a first amorphous silicon film, then depositing silicon nuclei, which will act as nucleation sites, on the amorphous film. After deposition of silicon nuclei, crystallization, and specifically HSG, is prevented by lowering temperature and/or raising pressure. Next a second amorphous silicon layer is deposited over the first layer and the nuclei. Finally an anneal is performed to induce crystallization from the embedded nuclei. Thus grains are formed from the silicon bulk, rather than from the surface, HSG is avoided, and a smooth polysilicon film with enhanced grain size is produced.

Abstract: A method to enhance grain size in polysilicon films while avoiding formation of hemispherical grains (HSG) is disclosed. The method begins by depositing a first amorphous silicon film, then depositing silicon nuclei, which will act as nucleation sites, on the amorphous film. After deposition of silicon nuclei, crystallization, and specifically HSG, is prevented by lowering temperature and/or raising pressure. Next a second amorphous silicon layer is deposited over the first layer and the nuclei. Finally an anneal is performed to induce crystallization from the embedded nuclei. Thus grains are formed from the silicon bulk, rather than from the surface, HSG is avoided, and a smooth polysilicon film with enhanced grain size is produced.