Patents by Inventor Shuo Jia

Shuo Jia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240127781
    Abstract: Provided is a pressure-resistant underwater acoustic coating structure with a mesh structure interlayer, including an outer coating, a mesh structure interlayer, an inner coating, and a metal backing; wherein the outer coating is used for inputting acoustic waves, the mesh structure interlayer and the inner coating are used for consuming acoustic wave energy, and the metal backing is used for enriching a sound absorption mode; and the outer coating, the mesh structure interlayer, the inner coating and the metal backing are attached in sequence.
    Type: Application
    Filed: August 18, 2023
    Publication date: April 18, 2024
    Applicant: Harbin Engineering University
    Inventors: Guoyong JIN, Xinyu JIA, Tiangui YE, Yan YAN, Shuo WANG, Xudong PAN, Yang SHANGGUAN, Yaowei YIN
  • Publication number: 20240084264
    Abstract: The present invention relates to the field of biomedicine, and in particular to an engineered migrasome, a method for preparing the engineered migrasome, a delivery system comprising the engineered migrasome, and a method for preparing the delivery system.
    Type: Application
    Filed: July 13, 2023
    Publication date: March 14, 2024
    Applicant: BEIJING MIGRASOME THERAPEUTICS LIMITED
    Inventors: Li YU, Dongju WANG, Chen DAI, Moye JIA, Shuo WANG, Tianlun DING, Qiushi ZHONG, Yi ZHENG
  • Patent number: 11145659
    Abstract: A method of forming a semiconductor structure includes following steps. A substrate is formed. The substrate has an active region, an isolation structure adjacent to the active region, and a contact on the active region. A dielectric stack is formed on the substrate. The dielectric stack is etched to form an opening such that the contact of the substrate is exposed. The opening has a bottom portion and a top portion communicated to the bottom portion. The dielectric stack is etched again to expand the bottom portion of the opening.
    Type: Grant
    Filed: May 18, 2020
    Date of Patent: October 12, 2021
    Assignee: NANYA TECHNOLOGY CORPORATION
    Inventors: Yen-Ching Wu, Rou-Wei Wang, Shuo Jia