Abstract: A portable computer includes a display module, and a hinge module. One end of the hinge module is connected to the display module. The portable computer further includes a host module. The host module includes a housing whereon an accommodating space is formed. The other end of the hinge module is fixed inside the accommodating space. The portable computer further includes a battery component installed on the housing for covering the accommodating space so as to cover the hinge module.

Abstract: A speaker module is capable of adjusting an outputting direction of an audio signal. The speaker module includes a base, a supporter, a speaker and a lifting mechanism. The supporter is disposed on the base. The speaker includes a speaker unit and an arm. The speaker unit is suspended above the base for generating the audio signal. A first end of the arm is connected to a lateral side of the speaker unit, and a second end of the arm is movably disposed on the supporter. The lifting mechanism includes a first lifting component disposed on the speaker unit, a body disposed on the base, and a second lifting component disposed on the body. The second lifting component can adjust a height of the first lifting component, so as to rotate the speaker unit relative to the supporter.

Abstract: A stackable electronic device with latching bumper includes a housing, an electrical connector, a latching mechanism having a linking module, a latching module and a button. The housing has a bottom board, a side board formed with a button hole, and a bumper disposed on the bottom board formed with a latching hole. The linking module is disposed on an inner side of the side board, and has a first end extended into the button hole and a second end extended into the bumper. The latching module is movably disposed in the bumper between a locking position and an unlocking position. The second end is connected to the latching module. The button can be pressed for driving the first end to move the second end corresponding to the locking position and the unlocking position. The present disclosure also provides a stackable electronic device system.

Abstract: A movable socket disposed between a casing and a circuit board is disclosed. An opening structure is disposed on the casing. The movable socket includes a first connector, a second connector, a soft cable and a driving mechanism. The first connector is slidably disposed on the casing. The second connector is disposed on the circuit board. The soft cable is disposed between the first connector and the second connector in a structurally deformable manner. Two ends of the soft cable are respectively connected to the first connector and the second connector. The driving mechanism is disposed between the first connector and the casing, the driving mechanism moves the first connector relative to the casing, to drive a part of the first connector to pass through the casing via the opening structure.

Abstract: A lock mechanism includes a base, a constraining component, a recovering component, a bridging component and an actuating component. The constraining component contacts against a fix portion of an electronic component to constrain its movement. The recovering component includes a bar, a first inclined structure and a second inclined structure. The bar includes a first end and a second end. The first inclined structure is disposed on the first end to push the fix portion, and the second inclined structure is disposed on the second end. Two ends of the bridging component respectively connect to the constraining component and the actuating component. The actuating component movably pierces through a hole on the base to separate the constraining component from the fix portion via the bridging component, and the actuating component further pushes the second inclined structure, so as to drive the first inclined structure to outwardly move the fix portion.

Abstract: A two-way lock mechanism is disclosed in the present invention. The two-way lock mechanism includes a gear, a first sub-gear, a second sub-gear, a third sub-gear, a fourth sub-gear, a first hook, a second hook and a latch. The latch moves a first distance along a first direction to simultaneously rotate the gear, so as to respectively rotate the second sub-gear and the third sub-gear relative to racks on the first hook and the second hook, and to separate the first hook and the second hook from corresponding fixing portions. The latch further moves a second distance along a second direction opposite to the first direction for simultaneously rotating the gear, so as to respectively rotate the first sub-gear and the fourth sub-gear relative to the racks on the first hook and the second hook, and to separate the first hook and the second hook from the corresponding fixing portions.

Abstract: A portable electronic device includes a main body, a battery, and a battery fixing mechanism including a button disposed through a button hole of the main body, first and second rod members, a first linkage rod pivoted to the first rod member and disposed in an oblique slot of the button, first and second transverse elastic members, and a rail member having transverse, oblique, and incurve rails. When a protruding rod of the first rod member moves in the transverse, oblique, or incurve rail, the rail member moves longitudinally to make the first rod member move transversely to be engaged with or separated from a first fixing hole of the battery. The first and second transverse elastic members are respectively disposed on the first and second rod members. The second rod member abuts against the first rod member for pushing the first rod member when the button is pressed.

Abstract: A speaker module capable of adjusting an outputting direction of an audio signal is disclosed in the present invention. The speaker module includes a base, a supporter, a speaker and a lifting mechanism. The supporter is disposed on the base. The speaker includes a speaker unit and an arm. The speaker unit is suspended above the base for generating the audio signal. A first end of the arm is connected to a lateral side of the speaker unit, and a second end of the arm is movably disposed on the supporter. The lifting mechanism includes a first lifting component disposed on the speaker unit, a body disposed on the base, and a second lifting component disposed on the body. The second lifting component can adjust a height of the first lifting component, so as to rotate the speaker unit relative to the supporter.

Abstract: A portable computer includes a display module, and a hinge module. One end of the hinge module is connected to the display module. The portable computer further includes a host module. The host module includes a housing whereon an accommodating space is formed. The other end of the hinge module is fixed inside the accommodating space. The portable computer further includes a battery component installed on the housing for covering the accommodating space so as to cover the hinge module.

Abstract: A structure of a DRAM cylindrical capacitor includes a substrate, a dielectric layer, an amorphous silicon spacer, a polysilicon plug, a HSG layer, a conductive layer and a capacitor dielectric layer. The dielectric layer is disposed on the substrate and includes an opening. The amorphous silicon spacer is disposed on the sidewall of the opening, wherein the polysilicon plug is exposed by the opening. The polysilicon plug includes a notch, and the internal surface of the notch is at the same plane as the internal surface of the amorphous silicon spacer. The HSG layer is disposed on the surface of the amorphous silicon spacer. Furthermore, the conductive layer is disposed on the HSG layer and the capacitor dielectric layer is disposed between the HSG layer and the conductive layer.

Abstract: A structure of a DRAM cylindrical capacitor includes a substrate, a dielectric layer, an amorphous silicon spacer, a polysilicon plug, a HSG layer, a conductive layer and a capacitor dielectric layer. The dielectric layer is disposed on the substrate and includes an opening. The amorphous silicon spacer is disposed on the sidewall of the opening, wherein the polysilicon plug is exposed by the opening. The polysilicon plug includes a notch, and the internal surface of the notch is at the same plane as the internal surface of the amorphous silicon spacer. The HSG layer is disposed on the surface of the amorphous silicon spacer. Furthermore, the conductive layer is disposed on the HSG layer and the capacitor dielectric layer is disposed between the HSG layer and the conductive layer.

Abstract: A method of manufacturing dynamic random access memory (DRAM) cylindrical capacitor is provided. A substrate having a polysilicon plug formed therein is provided. A dielectric layer having an opening is disposed on the substrate, wherein the opening exposes the polysilicon plug. Thereafter, an amorphous silicon spacer is formed on the sidewall of the opening to expose a portion of the polysilicon plug. Next, a top portion of the exposed polysilicon plug is removed and a seeding method is used to grow a hemispherical silicon grain (HSG) layer on a surface of the amorphous silicon spacer. A capacitor dielectric layer is formed on the surface of the HSG layer and a conductive layer is then formed on the capacitor dielectric layer. As no HSG is formed on the polysilicon plug, and therefore the contact area of the capacitor is not decreased.

Abstract: A method of manufacturing a charge storage device is provided. Utilizing the capacity for a precise control of the thickness and the silicon content of a deposited film in an atomic layer deposition process, a stacked gradual material layer such as a hafnium silicon oxide (HfxSiyOz) layer is formed. The silicon content is gradually changed throughout the duration of the HfxSiyOz deposition process. The etching rate for the HfxSiyOz layer in dilute hydrogen fluoride solution is dependent on the silicon content y in the HfxSiyOz layer. The sidewalls of the stacked gradual material layer are etched to form an uneven profile. The lower electrode, the capacitor dielectric layer and the upper electrode are formed on the uneven sidewalls of the stacked gradual material layers, the area between the lower electrode and the upper electrode is increased to improve the capacitance of the charge storage device.

Abstract: A cylindrical capacitor comprising at least a substrate, a cylindrical bottom electrode, a structure layer, a top electrode and a capacitor dielectric layer is provided. The substrate has several plugs. The cylindrical bottom electrodes are disposed on the substrate and electrically connected to the respective plugs. The structure layer surrounds the periphery of each cylindrical bottom electrode. The structure layers that surround the two opposing cylindrical bottom electrodes have no mutual contact while the structure layers that surround two neighboring cylindrical bottom electrodes contact each other. Furthermore, the top electrodes cover the respective cylindrical bottom electrodes and the capacitor dielectric layer is disposed between each top electrode and corresponding cylindrical bottom electrode. Due to the structure layers, the mechanical strength of the whole cylindrical capacitor is improved and the density of the capacitor can be increased.

Abstract: A cylindrical capacitor comprising at least a substrate, a cylindrical bottom electrode, a structure layer, a top electrode and a capacitor dielectric layer is provided. The substrate has several plugs. The cylindrical bottom electrodes are disposed on the substrate and electrically connected to the respective plugs. The structure layer surrounds the periphery of each cylindrical bottom electrode. The structure layers that surround the two opposing cylindrical bottom electrodes have no mutual contact while the structure layers that surround two neighboring cylindrical bottom electrodes contact each other. Furthermore, the top electrodes cover the respective cylindrical bottom electrodes and the capacitor dielectric layer is disposed between each top electrode and corresponding cylindrical bottom electrode. Due to the structure layers, the mechanical strength of the whole cylindrical capacitor is improved and the density of the capacitor can be increased.

Abstract: A method of manufacturing a charge storage device is provided. Utilizing the capacity for a precise control of the thickness and the silicon content of a deposited film in an atomic layer deposition process, a stacked gradual material layer such as a hafnium silicon oxide (HfxSiyOz) layer is formed. The silicon content is gradually changed throughout the duration of the HfxSiyOz deposition process. The etching rate for the HfxSiyOz layer in dilute hydrogen fluoride solution is dependent on the silicon content y in the HfxSiyOz layer. The sidewalls of the stacked gradual material layer are etched to form an uneven profile. The lower electrode, the capacitor dielectric layer and the upper electrode are formed on the uneven sidewalls of the stacked gradual material layers, the area between the lower electrode and the upper electrode is increased to improve the capacitance of the charge storage device.

Abstract: A cylindrical capacitor comprising at least a substrate, a cylindrical bottom electrode, a structure layer, a top electrode and a capacitor dielectric layer is provided. The substrate has several plugs. The cylindrical bottom electrodes are disposed on the substrate and electrically connected to the respective plugs. The structure layer surrounds the periphery of each cylindrical bottom electrode. The structure layers that surround the two opposing cylindrical bottom electrodes have no mutual contact while the structure layers that surround two neighboring cylindrical bottom electrodes contact each other. Furthermore, the top electrodes cover the respective cylindrical bottom electrodes and the capacitor dielectric layer is disposed between each top electrode and corresponding cylindrical bottom electrode. Due to the structure layers, the mechanical strength of the whole cylindrical capacitor is improved and the density of the capacitor can be increased.

Abstract: A method of manufacturing dynamic random access memory (DRAM) cylindrical capacitor is provided. A substrate having a polysilicon plug formed therein is provided. A dielectric layer having an opening is disposed on the substrate, wherein the opening exposes the polysilicon plug. Thereafter, an amorphous silicon spacer is formed on the sidewall of the opening to expose a portion of the polysilicon plug. Next, a top portion of the exposed polysilicon plug is removed and a seeding method is used to grow a hemispherical silicon grain (HSG) layer on a surface of the amorphous silicon spacer. A capacitor dielectric layer is formed on the surface of the HSG layer and a conductive layer is then formed on the capacitor dielectric layer. As no HSG is formed on the polysilicon plug, and therefore the contact area of the capacitor is not decreased.

Abstract: A wafer device is disclosed for improving reliability of circuits fabricated in an active area on a silicon substrate. A seal ring is fabricated around the active area, and a shallow trench isolation is also formed between the seal ring and a scribe line by etching into a portion of the silicon substrate, wherein the seal ring and the shallow trench isolation prevent die saw induced crack from propagating to the active area when the active area is cut along the scribe line.