Abstract: Changes in capillary pressure and relative permeabilities in reactive transport codes or reservoir simulators are formed by computer modeling. Based on continuum-scale hydraulic properties, the pore size distribution (PSD) is determined from a capillary pressure curve using the capillary tube concept. Changes in mineral volume through equilibrium or kinetic mineral reactions are then translated to changes in pore radii of the pore size distribution by selectively changing the radii of water occupied pores. The resulting new pore size distribution is converted back to an updated capillary pressure curve, which is then used for determining and forming models of total permeability and relative permeabilities at the continuum scale.

Abstract: A manufacturing method for reverse conducting insulated gate bipolar transistor, the manufacturing method is characterized by the use of polysilicon for filling in grooves on the back of a reverse conducting insulated gate bipolar transistor. The parameters of reverse conducting diodes on the back of the reverse conducting insulated gate bipolar transistor can be controlled simply by controlling the doping concentration of the polysilicon accurately, indicating relatively low requirements for process control. The reverse conducting insulated gate bipolar transistor manufacturing method is relatively low in requirements for process control and relatively small in manufacturing difficulty.

Abstract: An insulated gate bipolar transistor (IGBT) manufacturing method comprises the following steps: providing a semiconductor substrate of a first conducting type, the semiconductor substrate having a first major surface and a second major surface (100); forming a field-stop layer of a second conducting type on the first major surface of the semiconductor substrate (200); growing an oxide layer on the field-stop layer (300); removing the oxide layer from the field-stop layer (400); forming an epitaxial layer on the field-stop layer from which the oxide layer has been removed; and then manufacturing an IGBT on the epitaxial layer (600). Before regular manufacturing of an IGBT, the surface defects of a substrate material are eliminated as many as possible before epitaxy is formed, and the quality of an epitaxial layer is improved, thereby improving the quality of the whole IGBT.

Abstract: Disclosed is a method for removing a polysilicon protection layer (12) on a back face of an IGBT having a field stop structure (10). The method comprises thermally oxidizing the polysilicon protection layer (12) on the back face of the IGBT until the oxidation is terminated on a gate oxide layer (11) located above the polysilicon protection layer (12) to form a silicon dioxide layer (13), and removing the formed silicon dioxide layer (13) and the gate oxide layer (11) by a dry etching process. The method for removing the protection layer is easier to control.

Abstract: An insulated gate bipolar translator (IGBT) with a built-in diode and a manufacturing method thereof are provided.

Abstract: An electric wheel motor cooling system includes first and second electric wheel motors and gear reducers which use hydraulic fluid for cooling and lubrication. Each of the electric wheel motor housings includes a sump and a scavenge pump for return of hydraulic fluid to the hydraulic fluid reservoir. A remotely located hydraulic pump interconnected with the hydraulic fluid reservoir supplies and powers first and second locally located hydraulic motors which supply the electric motors and gears with an equal flow of lubricating and cooling oil. The first and second hydraulic motors, in turn, drive a common output shaft which, in turn, drives first and second scavenge pumps. The first and second scavenge pumps have a higher fluid flow rate than the hydraulic motors ensuring that oil is removed from the first and second electric wheel motor housings thus eliminating any churning losses of the motors or gears.

Abstract: The presently disclosed subject matter provides methods, compositions, and kits for assessing the viability of bacteria from a selected genus, assessing the antibiotic susceptibility of bacteria from the selected genus, and identifying compounds with anti-persister activity for bacteria from the selected genus. The bacteria include, but are not limited to, Borrelia burgdorferi, Staphylococcus aureus, Escherichia coli, Klebsiella pneumoniae, Acinetobacter baumanii, and Mycobacterium tuberculosis. Compositions include compounds with high activity against Borrelia persisters and their combinations with current Lyme antibiotics for more effect treatment of Lyme disease. Methods for inhibiting the growth and/or survival of bacteria from the Borrelia genus and for treating Lyme disease using appropriate drug combinations in a subject are also provided.

Abstract: Methods and a system are provided. A method includes automatically detecting, by an attribute structural variation detector, attribute structural variations in record schemas of a database lacking schema enforcement. The automatically detecting step includes encoding, by an encoder, nodes in the record schemas based on respective updated node labels to obtain a plurality of codes. The automatically detecting step further includes clustering, by a clusterer, the plurality of codes into one of a used category and an unused category. The used category and the unused category respectively consist of any of the plurality of codes used or unused to update a child label. The automatically detecting step also includes, when an intersection set formed from the used and unused categories has at least one member, retrieving, by the attribute structural variation detector, the at least one member as a structural variation between at least two of the record schemas.

Abstract: A mechanism is provided for identifying a usage for data in a data structure. A set of configuration files associated with a set of services are analyzed to identify at least one class associate with the data in the data structure thereby forming a data structure-to-class mapping. Source code associated with the set of services is analyzed to identify a set of services used by at least one class in the data structure-to-class mapping thereby forming a service-to-class mapping. A set of specification files associated with the set of services are analyzed to identify a set of uses associated with at least one service in the service-to-class mapping thereby forming a use-to-service mapping. An identification of usage information of the data structure is generated using the data structure-to-class mapping, the service-to-class mapping, and the use-to-service mapping.

Abstract: The present disclosure discloses a method and an apparatus for adjusting an optical center. The method includes fixedly installing a viewport cover plate in a terminal device; movably installing a camera in the terminal device; and adjusting a position of the camera; wherein adjusting the position of the camera comprises adjusting a position of an optical center of the camera by aligning the optical center of the camera with a center of an external viewport on the viewport cover plate to achieve concentricity between the optical center of the camera and the center of the external viewport. The apparatus for adjusting the optical center includes a projector, a computer, and an adjusting assembly. The apparatus of the present disclosure could provide an advantage of simple operation, and each terminal device can achieve an excellent centering effect by using the apparatus.

Abstract: An insulated gate bipolar transistor (IGBT) manufacturing method comprises the following steps: providing a semiconductor substrate of a first conducting type, the semiconductor substrate having a first major surface and a second major surface (100); forming a field-stop layer of a second conducting type on the first major surface of the semiconductor substrate (200); growing an oxide layer on the field-stop layer (300); removing the oxide layer from the field-stop layer (400); forming an epitaxial layer on the field-stop layer from which the oxide layer has been removed; and then manufacturing an IGBT on the epitaxial layer (600). Before regular manufacturing of an IGBT, the surface defects of a substrate material are eliminated as many as possible before epitaxy is formed, and the quality of an epitaxial layer is improved, thereby improving the quality of the whole IGBT.

Abstract: A manufacturing method for reverse conducting insulated gate bipolar transistor, the manufacturing method is characterized by the use of polysilicon for filling in grooves on the back of a reverse conducting insulated gate bipolar transistor. The parameters of reverse conducting diodes on the back of the reverse conducting insulated gate bipolar transistor can be controlled simply by controlling the doping concentration of the polysilicon accurately, indicating relatively low requirements for process control. The reverse conducting insulated gate bipolar transistor manufacturing method is relatively low in requirements for process control and relatively small in manufacturing difficulty.

Abstract: A method, apparatus, and computer-readable medium for leveraging real-time sales volume for conducting group buys comprising initializing a sale of an item, the sale specifying a current price of the item which is calculated based on a current sales volume of the item and sales volume ranges, processing transactions with users for items at a purchase price equal to the current price when a purchase request is received from the corresponding user, terminating the sale of the item at a closing price when the current sales volume has reached a threshold or when a period of time has passed since the sale was initialized, and crediting accounts belonging to one or more users with an additional amount based at least in part on a difference between the closing price and the purchase price for each item for the corresponding user.

Abstract: A method for processing a device shell, includes: applying an ink layer onto a film to form a membrane; attaching the membrane to an outer surface of the device shell; and removing the film from the membrane attached to the outer surface, such that the ink layer remains on the outer surface.

Abstract: A field-stop reverse conducting insulated gate bipolar transistor and a manufacturing method thereof. The transistor comprises a terminal structure (200) and an active region (100). An underlayment of the field-stop reverse conducting insulated gate bipolar transistor is an N-type underlayment, the back surface of the underlayment is provided with an N-type electric field stop layer (1), one surface of the electric field stop layer (1) departing from the underlayment is provided with a back-surface P-type structure (10), and the surface of the back-surface P-type structure (10) is provided with a back-surface metal layer (12). A plurality of polysilicon filling structures (11) which penetrate into the electric field stop layer (1) from the back-surface P-type structure (10) are formed in the active region (100).

Abstract: A field-stop reverse conducting insulated gate bipolar transistor and a manufacturing method thereof. The transistor comprises a terminal structure (200) and an active region (100). An underlayment of the field-stop reverse conducting insulated gate bipolar transistor is an N-type underlayment, the back surface of the underlayment is provided with an N-type electric field stop layer (1), one surface of the electric field stop layer (1) departing from the underlayment is provided with a back-surface P-type structure (10), and the surface of the back-surface P-type structure (10) is provided with a back-surface metal layer (12). A plurality of polysilicon filling structures (11) which penetrate into the electric field stop layer (1) from the back-surface P-type structure (10) are formed in the active region (100).

Abstract: An insulated gate bipolar translator (IGBT) with a built-in diode and a manufacturing method thereof are provided.

Abstract: A field-stop reverse conducting insulated gate bipolar transistor and a manufacturing method therefor. The transistor comprises a terminal structure (200) and an active region (100). An underlayment of the field-stop reverse conducting insulated gate bipolar transistor is an N-type underlayment, the back surface of the underlayment is provided with an N-type electric field stop layer (1), one surface of the electric field stop layer departing from the underlayment is provided with a back-surface P-type structure (10), and the surface of the back-surface P-type structure is provided with a back-surface metal layer (12). A plurality of notches (11) which penetrate through the back-surface P-type structure (10) from the back-surface metal layer (12) to the electric field stop layer (1) are formed in the active region (100), and metals of the back-surface metal layer (12) are filled into the notches (11) to form a metal structure which extends into the electric field stop layer (1).