Abstract: The present invention provides a quinoline derivative for the treatment of nasopharyngeal carcinoma and use thereof in preparation of a pharmaceutical composition for tumor treatment.

Abstract: A method for transferring data from a database may include receiving, at a database management system, a request to transfer, to a client, at least a portion of data stored at a database coupled with the database management system. The database management system may respond to the request by at least generating an internal table containing at least the portion of the data being transferred to the client. The database management system may further transfer at least the portion of the data to the client by at least sending, to the client, one or more data chunks. Each of the one or more data chunks may include at least a portion of a column of data from the internal table. Related systems and articles of manufacture, including computer program products, are also provided.

Abstract: The present invention provides a quinoline derivative for the treatment of nasopharyngeal carcinoma and use thereof in preparation of a pharmaceutical composition for tumor treatment.

Abstract: A method for transferring data from a database may include receiving, at a database management system, a request to transfer, to a client, at least a portion of data stored at a database coupled with the database management system. The database management system may respond to the request by at least generating an internal table containing at least the portion of the data being transferred to the client. The database management system may further transfer at least the portion of the data to the client by at least sending, to the client, one or more data chunks. Each of the one or more data chunks may include at least a portion of a column of data from the internal table. Related systems and articles of manufacture, including computer program products, are also provided.

Abstract: An electrostatic discharge protection device and methodology are provided for protecting semiconductor devices against electrostatic discharge events by temporarily forming during normal (non-ESD) operation two more inversion layers (112, 113) in a first well region (104) that is disposed between anode and cathode regions (105, 106) in response to one or more bias voltages (G1, G2) that are close to Vdd in order to reduce leakage current and capacitance during normal operation (non-ESD) condition. During an electrostatic discharge event, the bias voltages can be removed (e.g., decoupled or set to 0V) to eliminate the inversion layers, thereby forming a semiconductor resistor for shunting the ESD current.

Abstract: An electrostatic discharge protection device and methodology are provided for protecting semiconductor devices against electrostatic discharge events by temporarily forming during normal (non-ESD) operation two more inversion layers (112, 113) in a first well region (104) that is disposed between anode and cathode regions (105, 106) in response to one or more bias voltages (G1, G2) that are close to Vdd in order to reduce leakage current and capacitance during normal operation (non-ESD) condition. During an electrostatic discharge event, the bias voltages can be removed (e.g., decoupled or set to 0V) to eliminate the inversion layers, thereby forming a semiconductor resistor for shunting the ESD current.

Abstract: An electrostatic discharge protection device and methodology are provided for protecting semiconductor devices against electrostatic discharge events by temporarily forming during normal (non-ESD) operation two more inversion layers (112, 113) in a first well region (104) that is disposed between anode and cathode regions (105, 106) in response to one or more bias voltages (G1, G2) that are close to Vdd in order to reduce leakage current and capacitance during normal operation (non-ESD) condition. During an electrostatic discharge event, the bias voltages can be removed (e.g., decoupled or set to 0V) to eliminate the inversion layers, thereby forming a semiconductor resistor for shunting the ESD current.

Abstract: An electrostatic discharge protection device and methodology are provided for protecting semiconductor devices against electrostatic discharge events by temporarily forming during normal (non-ESD) operation two more inversion layers (112, 113) in a first well region (104) that is disposed between anode and cathode regions (105, 106) in response to one or more bias voltages (G1, G2) that are close to Vdd in order to reduce leakage current and capacitance during normal operation (non-ESD) condition. During an electrostatic discharge event, the bias voltages can be removed (e.g., decoupled or set to 0V) to eliminate the inversion layers, thereby forming a semiconductor resistor for shunting the ESD current.