Abstract: A sense amplifier capable of performing a logical NOT operation is provided, which includes a sense circuit, configured to sense a first voltage of a bit line and a second voltage of an inverse bit line; a first transistor, coupled between a first terminal of the sense circuit and the bit line; a second transistor, coupled between a second terminal of the sense circuit and the inverse bit line; and a third transistor, coupled between the bit line and the inverse bit line. First and second memory cells are respectively controlled by first and second word lines, and connected to the bit line. When the sense amplifier is in an inverse writing state, the sense amplifier writes the second voltage to the second memory cell through a predetermined path. A first logical state of the first voltage is complementary to a second logical state of the second voltage.

Abstract: A memory device capable of performing in-memory computing is provided and includes a memory cell array, a sense amplifier, a voltage control circuit, and a word line decoding circuit. The memory cell array includes memory cells arranged in a two-dimensional array. The memory cells on each row of the memory cell array are connected to a corresponding word line, and the memory cells on each column of the memory cell array are connected to a corresponding bit line. The sense amplifier detects a voltage level of the activated bit line and a voltage level of an inverse bit line corresponding to the bit line. The voltage control circuit selects a detection voltage provided to the sense amplifier according to a control signal from a memory controller. The word line decoding circuit activates a first word line and a second word line according to the control signal.

Abstract: A memory device capable of performing in-memory computing is provided and includes a memory cell array, a sense amplifier, a voltage control circuit, and a word line decoding circuit. The memory cell array includes memory cells arranged in a two-dimensional array. The memory cells on each row of the memory cell array are connected to a corresponding word line, and the memory cells on each column of the memory cell array are connected to a corresponding bit line. The sense amplifier detects a voltage level of the activated bit line and a voltage level of an inverse bit line corresponding to the bit line. The voltage control circuit selects a detection voltage provided to the sense amplifier according to a control signal from a memory controller. The word line decoding circuit activates a first word line and a second word line according to the control signal.

Abstract: A sense amplifier capable of performing a logical NOT operation is provided, which includes a sense circuit, configured to sense a first voltage of a bit line and a second voltage of an inverse bit line; a first transistor, coupled between a first terminal of the sense circuit and the bit line; a second transistor, coupled between a second terminal of the sense circuit and the inverse bit line; and a third transistor, coupled between the bit line and the inverse bit line. First and second memory cells are respectively controlled by first and second word lines, and connected to the bit line. When the sense amplifier is in an inverse writing state, the sense amplifier writes the second voltage to the second memory cell through a predetermined path. A first logical state of the first voltage is complementary to a second logical state of the second voltage.

Abstract: A drilling machine includes a base located on a horizontal surface, a post provided on the base, a worktable movably connected to the post and a drilling unit provided on the post. The drilling unit includes a direct-current brushless motor, a drill and a transmission. The direct-current brushless motor is provided on the post. The drill is operatively connected to the direct-current brushless motor. The transmission includes a circuit board and gear-related buttons operable to instruct the circuit board to convert an alternating current into various direct currents to cause the motor and, therefore, the drill to rotate at various rotational rates.

Abstract: A plier or shear tool includes a pair of handles having one end rotatably secured together with a tube and each having a pole. One or more tool members each includes a pair of levers having a middle orifice for receiving the tube and each having an aperture for receiving the poles and for quickly securing the tool members to the handles. A ball is received in the tube, a shaft is received in the tube and has a depression for receiving the ball. A spring may bias the shaft to disengage the depression from the ball and to force the ball to engage with the hub.

Abstract: An oil applying device includes a housing having a base for receiving oil and includes an upper oil tank. A lower roller is rotatably supported in the base and a middle roller is rotatably supported above the lower roller such that the lower roller may apply the oil onto the middle roller. An upper roller is rotatably supported above the middle roller for engaging with a work piece between the upper roller and the middle roller. A number of nozzles are secured to the bottom of the oil tank for applying the oil onto the upper roller so as to apply the oil onto the work piece.