Abstract: A method for fabricating a semiconductor structure having an enhanced hole linear Rashba spin-orbit coupling effect includes: providing a substrate; and growing a germanium quantum well on the substrate. A silicon atomic layer is inserted at an interface between a well and a barrier of the germanium quantum well. The silicon atomic layer includes one or more monolayers.

Abstract: A fabrication method for a semiconductor structure with a hole spin qubit includes: providing a substrate; growing a germanium quantum well on the substrate, in which the germanium quantum well is an inclined quantum well structure grown in a [110] direction, and the germanium quantum well is grown by a complementary metal oxide semiconductor process; and fabricating a two-dimensional gate-defined quantum dot in the germanium quantum well.

Abstract: The present disclosure provides a silicon-based direct band gap light-emitting material compatible with the CMOS fabrication process, and a preparation method thereof. The method comprises steps of: preparing a silicon-based material, wherein the silicon-based material is a germanium material or a silicon-germanium alloy; filling some of lattice interstitial sites of the silicon-based material with noble gas atoms and/or other atoms with a low atomic number, so as to expand the lattice volume in order to transform the band structure from indirect band gap to direct band gap, thereby obtaining a silicon-based direct band gap light-emitting material. The present disclosure also provides a silicon-based light-emitting device.