Abstract: The film acoustic wave devices (12a, 12b and 12c) having the same properties are obtained by changing at least one of the followings: the length and/or the width of upper electrode (18a and 18b); the distance between the upper electrodes (18a and 18b); the length and/or the width of connecting patterns (19a and 19b); areas of bonding pads (20a and 20b); and the pattern shape for the film acoustic wave device (12a and 12b) such as the area of capacitor electrode connected electrically to the bonding pads (20a and 20b); the property variations of film acoustic wave devices (12a, 12b and 12c) caused from the positioning at wafer 11 is compensated.

Abstract: An optical system deviation estimating apparatus includes an erected/inverted attitude setting means 9 for changing dispositional attitude of an optical system under test, a non-interferometric type wavefront measuring means 10 for measuring wavefronts at the attitudes as set up without resorting to interference phenomenon of light, a polynomial approximation means 15 for expanding measured wavefront values determined by the non-interferometric type wavefront measuring means 10 to a polynomial, an averaging arithmetic means 11 for averaging the measured values derived from output of the non-interferometric type wavefront measuring means 10 or alternatively arithmetic values derived from output of the polynomial approximation means 15, and a polynomial specific coefficient extraction arithmetic means 16 for extracting specific coefficient values of the polynomial.

Abstract: A film acoustic wave device having similar properties are obtained by changing at least one of the length and/or the width of upper electrodes; the distance between the upper electrodes; the length and/or the width of connecting patterns; the areas of bonding pads; and the pattern shape for the film acoustic wave device such as the area of capacitor electrodes electrically connected to the bonding pads. Property variations of the film acoustic wave devices caused from the positioning at a wafer is compensated for.

Abstract: An optical system deviation estimating apparatus includes an erected/inverted attitude setting means 9 for changing dispositional attitude of an optical system under test, a non-interferometric type wavefront measuring means 10 for measuring wavefronts at the attitudes as set up without resorting to interference phenomenon of light, a polynomial approximation means 15 for expanding measured wavefront values determined by the non-interferometric type wavefront measuring means 10 to a polynomial, an averaging arithmetic means 11 for averaging the measured values derived from output of the non-interferometric type wavefront measuring means 10 or alternatively arithmetic values derived from output of the polynomial approximation means 15, and a polynomial specific coefficient extraction arithmetic means 16 for extracting specific coefficient values of the polynomial.

Abstract: There is disclosed an acoustic wave apparatus, constructed in such a manner that a surface rotated in the range of 34° to 41° from a crystal Y axis around the crystal X axis of lithium tantalate is set as the surface of a substrate, a standardized electrode thickness (h/&lgr;) obtained by standardizing a thickness h of an electrode finger constituting at least a part of an interdigital transducer by a wavelength &lgr; of a surface acoustic wave is set to the range of 0.01 to 0.05, and a duty ratio (w/p) of the electrode finger decided based on a width w and an arraying cycle p of the electrode finger is set to the value ranging from 0.6 to just below 1.0.

Abstract: There is provided a film bulk acoustic wave device comprising: a silicon substrate 1, a dielectric film 21 including a silicon nitride 16 formed on the substrate 1 and a silicon oxide 2 on the silicon nitride 16, a bottom electrode 3 formed on the dielectric film 21, a piezoelectric film 17 formed on the bottom electrode 3, and a top electrode 5 formed on the piezoelectric film 17, wherein a via hole is formed in such a manner that the thickness direction of a part of the silicon substrate 1 which is opposite to a region including a part where the top electrode 5 exists is removed from the bottom surface of the silicon substrate 1 to a boundary surface with the silicon nitride 16.

Abstract: In a coherent CW laser radar apparatus, a soft target such as rain, fog, and air turbulence can be detected by using a CW laser. The coherent CW laser radar apparatus is arbandd by comprising: as an optical component, a CW laser oscillating a laser radiation having a single wavelength; a dividing means for dividing laser radiation derived from the CW laser; an optical modulator for modulating one of the laser radiation divided by the dividing means; an optical antenna for projecting the modulated laser radiation as transmitted radiation toward a target, and also for receiving scattered radiation from the target as received radiation; combining means for combining the other of the laser radiation divided by the dividing means as local radiation with the received radiation received from the optical antenna; and a photodetector for optical-heterodyne-detecting the combined radiation.

Abstract: A turbulent layer detecting apparatus in accordance with the present invention is equipped with a transmitting section that transmits beams of electromagnetic waves, sound waves or light waves into the atmosphere, a receiving section that receives the electromagnetic waves, the sound waves, or the light waves that have been transmitted by the transmitting section and scattered by particulates or the like in the atmosphere, a wind velocity measuring section that measures a beam direction component of a wind velocity at two or more observation points on a beam from a received signal received by the receiving section, or a density measuring section that measures a density at two or more observation points on the beam, and a turbulent layer detecting section that detects the presence of a turbulent layer on the basis of the output of either the wind velocity measuring section or the density measuring section.

Abstract: A coherent laser radar system includes a pulsed laser oscillating a pulsed laser beam which is split into two parts by an optical divider. A first part of the two is transmitted as a transmitted beam via a beam splitter. A second part is supplied to a delay line via a coupling optics and others to be delayed by a predetermined time as a local beam, and is incident onto an optical coupler. The received beam from the target is incident onto the optical coupler via a scanning optics and so on. A photodetector carries out the coherent detection of the light beam coupled by the optical coupler. A signal processor computes a target velocity and the like from a signal generated by the detection and converted into a digital signal by an A/D converter. This makes it possible to solve a problem of a conventional system in that the system configuration is complicated and expensive.

Abstract: In an elastic wave device, an electrode, which is formed in a comb-like shape and is made of conductive material having a prescribed thickness, is arranged on a substrate of a piezo-electric element containing lithium niobate as a main component. Also, in this elastic wave device, a surface of the substrate is set to a plane which is obtained by rotating a plane perpendicular to a crystal Y-axis of the lithium niobate by an angle ranging from 55 degrees to 57 degrees around a crystal x-axis of the lithium niobate, and a duty ratio (a width w of an electrode finger/an arrangement interval p of a pair of electrode fingers) of each of a plurality of electrode fingers composing the electrode is equal to or higher than 0.4 and is lower than 1.0.

Abstract: A film bulk acoustic wave device, comprising: a substrate; a bottom electrode formed on one surface of the substrate; a piezoelectric film formed on the bottom electrode; and a first top electrode formed on the piezoelectric film, further comprises a second top electrode having a larger mass load than the first top electrode, and formed on the first top electrode on the piezoelectric film when viewed from the center of the first top electrode, wherein the piezoelectric film has a high-band-cut-off-type dispersion characteristic. The cut-off frequency of a second top electrode portion piezoelectric film having a large mass load can be lower than the cut-off frequency of a first top electrode portion piezoelectric film, to thereby trap the energy of the acoustic wave in a region of the first top electrode portion side, so that good performance may be feasible.

Abstract: A film bulk acoustic wave device, comprising: a substrate; a bottom electrode formed on one surface of the substrate; a piezoelectric film formed on the bottom electrode; and a first top electrode formed on the piezoelectric film, further comprises a second top electrode having a larger mass load than the first top electrode, and formed on the first top electrode on the piezoelectric film when viewed from the center of the first top electrode, wherein the piezoelectric film has a high-band-cut-off-type dispersion characteristic.

Abstract: Disclosed is a radar system capable of obviating a problem that a sufficient improvement of an S/N ratio could not be obtained in the prior art, and comprising a transmitter/receiver for detecting a phase of a receiving signal reflected from an observation target, an A/D converter for converting the receiving signal into a digital signal, a range gate for extracting the receiving signal having a time corresponding to the predetermined pulse width, a data dividing unit for dividing the receiving signals in to two groups of data, an FFT unit for fast-Fourier-transforming one group of data of the two groups of data, an FFT unit for fast-Fourier-transforming the other group of data, a complex conjugating unit for taking a complex conjugate of an output of the FFT unit, a complex multiplying unit for performing a complex multiplication for the every same Doppler frequency component with respect to an output of the former FFT unit and an output of the complex conjugating unit, and a complex adder for executing a co

Abstract: There is provided a film bulk acoustic wave device comprising: a silicon substrate 1, a dielectric film 21 including a silicon nitride 16 formed on the substrate 1 and a silicon oxide 2 on the silicon nitride 16, a bottom electrode 3 formed on the dielectric film 21, a piezoelectric film 17 formed on the bottom electrode 3, and a top electrode 5 formed on the piezoelectric film 17, wherein a via hole is formed in such a manner that the thickness direction of a part of the silicon substrate 1 which is opposite to a region including a part where the top electrode 5 exists is removed from the bottom surface of the silicon substrate 1 to a boundary surface with the silicon nitride 16.

Abstract: The film acoustic wave devices (12a, 12b and 12c) having the same properties are obtained by changing at least one of the followings: the length and/or the width of upper electrode (18a and 18b); the distance between the upper electrodes (18a and 18b); the length and/or the width of connecting patterns (19a and 19b); areas of bonding pads (20a and 20b); and the pattern shape for the film acoustic wave device (12a and 12b) such as the area of capacitor electrode connected electrically to the bonding pads (20a and 20b); the property variations of film acoustic wave devices (12a, 12b and 12c) caused from the positioning at wafer 11 is compensated.

Abstract: In an elastic wave device, an electrode, which is formed in a comb-like shape and is made of conductive material having a prescribed thickness, is arranged on a substrate of a piezo-electric element containing lithium niobate as a main component. Also, in this elastic wave device, a surface of the substrate is set to a plane which is obtained by rotating a plane perpendicular to a crystal Y-axis of the lithium niobate by an angle ranging from 55 degrees to 57 degrees around a crystal x-axis of the lithium niobate, and a duty ratio (a width w of an electrode finger/an arrangement interval p of a pair of electrode fingers) of each of a plurality of electrode fingers composing the electrode is equal to or higher than 0.4 and is lower than 1.0.

Abstract: A piezoelectric thin film device which is composed mainly of a substrate, a piezoelectric thin film formed on the substrate, and thin film electrodes formed on both the upper and lower surfaces of the thin film. The thin film is resonated by applying an AC voltage across the electrodes. A substrate removed section is formed by partially or entirely removing the substrate below the thin film and opened to both the front and rear surfaces of the substrate through openings so as to relieve the pressure variation in the substrate removed section below a resonant structure.

Abstract: A coherent laser radar system includes a pulsed laser oscillating a pulsed laser beam which is split into two parts by an optical divider. A first part of the two is transmitted as a transmitted beam via a beam splitter. A second part is supplied to a delay line via a coupling optics and others to be delayed by a predetermined time as a local beam, and is incident onto an optical coupler. The received beam from the target is incident onto the optical coupler via a scanning optics and so on. A photodetector carries out the coherent detection of the light beam coupled by the optical coupler. A signal processor computes a target velocity and the like from a signal generated by the detection and converted into a digital signal by an A/D converter. This makes it possible to solve a problem of a conventional system in that the system configuration is complicated and expensive.

Abstract: An ultrasonic flaw detection apparatus is equipped with a probe which is driven by a transmission signal and which transmits an ultrasonic pulse at an angle with respect to a surface of a test object. The probe receives an ultrasonic pulse, which has been reflected by a defect in the test object, as an echo. The apparatus further includes a scanner for scanning the probe over a predetermined scanning zone on the test object and for outputting a spatial position of the probe. The apparatus is further equipped with a transmitter-receiver which has a transmitter for generating a transmission signal and outputting the transmission signal to the probe, a position detector for receiving a spatial position of the probe from the scanner, and a signal processor for detecting the defect according to the stored spatial position of the probe and the stored echo, taking the spread of an ultrasonic beam attributable to diffraction into account.

Abstract: An ultrasonic transceiver has a function of displaying a modified B scope. The ultrasonic transceiver transmits ultrasonics to an inner part of a test object at an angle of inclination to a surface of the test object, receives echoes from discontinuity in the test object, and displays, based on an outcome of the reception, an image which shows a state of transmission of the ultrasonics in the test object. When displaying the image, origins of time axes on the screen are shifted through a coordinate transformation of the outcome of reception to avoid the difference in lateral positions of images of single discontinuity. Consequently, it is possible to accurately discern the location, size, configuration, and posture of the discontinuity when the outcome of reception is displayed in a rectangular display window.