Abstract: A mask inspection apparatus includes an image acquisition mechanism that acquires an optical image of the pattern by making an inspection light incident on an EUV mask and detecting a reflection inspection light reflected from the EUV mask, in a state where the relation between the incident direction of the inspection light used for inspecting the pattern formed on the EUV mask, and the arrangement direction of the EUV mask serving as the inspection substrate is matched with the relation between the incident direction of the EUV light on the EUV mask, and the arrangement direction of the EUV mask in the EUV exposure apparatus.

Abstract: A mask inspection apparatus includes an image acquisition mechanism that acquires an optical image of the pattern by making an inspection light incident on an EUV mask and detecting a reflection inspection light reflected from the EUV mask, in a state where the relation between the incident direction of the inspection light used for inspecting the pattern formed on the EUV mask, and the arrangement direction of the EUV mask serving as the inspection substrate is matched with the relation between the incident direction of the EUV light on the EUV mask, and the arrangement direction of the EUV mask in the EUV exposure apparatus.

Abstract: A pattern inspection apparatus includes: an optical image acquiring mechanism to acquire optical image data of a corresponding divided pattern for each of masks for multiple patterning has been formed; a position deviation map generating processing circuitry to generate position deviation maps regarding the corresponding divided pattern; a difference position value map generating processing circuitry to generate one difference position value map defining a difference value between relative position deviation amounts of the each minimum element of the position deviation maps; a region specifying processing circuitry to specify at least one region having the difference value exceeding a threshold of distance between patterns laying side-by-side by using the difference position value map; and an output mechanism to output at least coordinates, a type of defect, and information of a reference image of each region specified for the each region specified.

Abstract: A pattern inspection apparatus includes: an optical image acquiring mechanism to acquire optical image data of a corresponding divided pattern for each of masks for multiple patterning has been formed; a position deviation map generating processing circuitry to generate position deviation maps regarding the corresponding divided pattern; a difference position value map generating processing circuitry to generate one difference position value map defining a difference value between relative position deviation amounts of the each minimum element of the position deviation maps; a region specifying processing circuitry to specify at least one region having the difference value exceeding a threshold of distance between patterns laying side-by-side by using the difference position value map; and an output mechanism to output at least coordinates, a type of defect, and information of a reference image of each region specified for the each region specified.

Abstract: A charged particle beam writing apparatus includes a reading unit to read an identifier from a substrate where an absorber film which absorbs extreme ultraviolet light is formed and the identifier which can be optically read is formed, a storage unit to store defect position information indicating a position of a defect on the substrate based on reference marks, defect size information indicating a size of the defect, which are corresponding to the identifier, and pattern data for writing, an examination unit to input partial pattern data corresponding to a region including at least the defect in the pattern data, the defect position information based on reference marks, and the defect size information, and to examine whether a pattern layout is formed such that the defect is located in a region where the absorber film remains after patterning, and a writing unit to write a pattern on the substrate.

Abstract: The present invention provides an electron beam writing apparatus and an image placement error correcting method each capable of calculating a high-accuracy correction amount relative to an image placement error in consideration of a difference in required unit area of height distribution data between the shape of a back surface of an EUV mask and the shape of a surface of a pin chuck. Of back surface shape data of the EUV mask necessary to perform an image placement error correction of each pattern, the back surface shape data of a position brought into contact with each pin of the pin chuck is extracted. The image placement error is calculated only from the extracted back surface shape data.

Abstract: The reference mark has steps and is formed on a sample. A stage moves in X and Y directions. The sample M is placed on the stage. An optical lever type height position sensor emits light to detect the reference mark FM? by the stage being scanned. The spot position of light reflected on the sample is detected in position sensitive detector. The X and Y coordinates of the position of the stage positioned when the spot position of the reflected light is changed is detected. The detected X and Y coordinates are regarded as the position C of the reference mark FM?. The position of a phase defect D located in the sample M is specified on the basis of the position C of the reference mark FM?. The position of a portion on which writing is to be performed is determined on the basis of a relationship with the specified position of the phase defect D.

Abstract: A correcting substrate for a charged particle beam lithography apparatus includes a substrate body using a low thermal expansion material having a thermal expansion lower than that of a silicon oxide (SiO2) material; a first conductive film arranged above the substrate; and a second conductive film selectively arranged on the first conductive film and having a reflectance higher than the first conductive film, wherein the low thermal expansion material is exposed on a rear surface of the correcting substrate.

Abstract: A charged particle beam writing apparatus includes a reading unit to read an identifier (ID) from a substrate where an absorber film which absorbs extreme ultraviolet (EUV) light is formed and the identifier which can be optically read is formed, a storage unit to store defect position information indicating a position of a defect on the substrate based on reference marks, defect size information indicating a size of the defect, which are corresponding to the identifier, and pattern data for writing, an examination unit to input partial pattern data corresponding to a region including at least the defect in the pattern data, the defect position information based on reference marks, and the defect size information, and to examine whether a pattern layout is formed such that the defect is located in a region where the absorber film remains after patterning, and a writing unit to write a pattern on the substrate using a charged particle beam, based on the pattern data in which the pattern layout is formed such t

Abstract: The reference mark has steps and is formed on a sample. A stage moves in X and Y directions. The sample M is placed on the stage. An optical lever type height position sensor emits light to detect the reference mark FM? by the stage being scanned. The spot position of light reflected on the sample is detected in position sensitive detector. The X and Y coordinates of the position of the stage positioned when the spot position of the reflected light is changed is detected. The detected X and Y coordinates are regarded as the position C of the reference mark FM?. The position of a phase defect D located in the sample M is specified on the basis of the position C of the reference mark FM?. The position of a portion on which writing is to be performed is determined on the basis of a relationship with the specified position of the phase defect D.

Abstract: A position measuring apparatus includes a holder having storage spaces in which a three-point support member for supporting a backside of a substrate being a mask at three points, and a vacuum chuck member for holding a backside of a substrate being a mask are prepared, a stage on which one of the three-point support member and the vacuum chuck member prepared in the storage spaces of the holder is mounted, a vacuum pump to hold and chuck the substrate through the vacuum chuck member in a state of being mounted on the stage, and a recognition unit to recognize a position of a pattern written on the substrate supported by the three-point support member mounted on the stage and a position of a pattern written on the substrate held by the vacuum chuck member on the stage.

Abstract: The present invention provides an electron beam writing apparatus and an image placement error correcting method each capable of calculating a high-accuracy correction amount relative to an image placement error in consideration of a difference in required unit area of height distribution data between the shape of a back surface of an EUV mask and the shape of a surface of a pin chuck. Of back surface shape data of the EUV mask necessary to perform an image placement error correction of each pattern, the back surface shape data of a position brought into contact with each pin of the pin chuck is extracted. The image placement error is calculated only from the extracted back surface shape data.

Abstract: A correcting substrate for a charged particle beam lithography apparatus includes a substrate body using a low thermal expansion material having a thermal expansion lower than that of a silicon oxide (SiO2) material; a first conductive film arranged above the substrate; and a second conductive film selectively arranged on the first conductive film and having a reflectance higher than the first conductive film, wherein the low thermal expansion material is exposed on a rear surface of the correcting substrate.

Abstract: A charged particle beam writing method includes measuring a topography of a backside of a substrate without an influence of a gravity sag, calculating a first positional deviation amount of a pattern written on a frontside of the substrate in a case of the backside of the substrate having been corrected to be flat, based on the the backside topography of the substrate, calculating a first coefficient of a first approximate expression indicating a positional deviation correction amount for correcting the first positional deviation amount, based on the first positional deviation amount, adding the first coefficient to a second coefficient of a second approximate expression indicating a positional deviation correction amount for correcting a second positional deviation amount of the pattern written on the frontside of the substrate in a case of the backside of the substrate having not been corrected to be flat, and writing the pattern on the frontside of the substrate utilizing a charged particle beam, based on

Abstract: A position measuring apparatus includes a holder having storage spaces in which a three-point support member for supporting a backside of a substrate being a mask at three points, and a vacuum chuck member for holding a backside of a substrate being a mask are prepared, a stage on which one of the three-point support member and the vacuum chuck member prepared in the storage spaces of the holder is mounted, a vacuum pump to hold and chuck the substrate through the vacuum chuck member in a state of being mounted on the stage, and a recognition unit to recognize a position of a pattern written on the substrate supported by the three-point support member mounted on the stage and a position of a pattern written on the substrate held by the vacuum chuck member on the stage.

Abstract: A charged particle beam writing method includes measuring a topography of a backside of a substrate without an influence of a gravity sag, calculating a first positional deviation amount of a pattern written on a frontside of the substrate in a case of the backside of the substrate having been corrected to be flat, based on the the backside topography of the substrate, calculating a first coefficient of a first approximate expression indicating a positional deviation correction amount for correcting the first positional deviation amount, based on the first positional deviation amount, adding the first coefficient to a second coefficient of a second approximate expression indicating a positional deviation correction amount for correcting a second positional deviation amount of the pattern written on the frontside of the substrate in a case of the backside of the substrate having not been corrected to be flat, and writing the pattern on the frontside of the substrate utilizing a charged particle beam, based on

Abstract: According to one embodiment of the present invention, the present invention may provide a temperature measuring method in a pattern drawing apparatus having a drawing chamber for drawing a pattern on a substrate to be transferred inside, a stage installed inside the drawing chamber, a standby chamber connected to the drawing chamber, and a thermostatic device installed inside the standby chamber, characterized in that a dummy substrate having a temperature measuring device and a recording device for recording the temperature measured by the temperature measuring device is transferred to the thermostatic device, then transferred into the drawing chamber, and then put on the stage, thus the temperature history of the dummy substrate in the transfer route from the thermostatic device to the stage is measured by the temperature measuring device and recorded in the recording device.

Abstract: According to one embodiment of the present invention, the present invention may provide a temperature measuring method in a pattern drawing apparatus having a drawing chamber for drawing a pattern on a substrate to be transferred inside, a stage installed inside the drawing chamber, a standby chamber connected to the drawing chamber, and a thermostatic device installed inside the standby chamber, characterized in that a dummy substrate having a temperature measuring device and a recording device for recording the temperature measured by the temperature measuring device is transferred to the thermostatic device, then transferred into the drawing chamber, and then put on the stage, thus the temperature history of the dummy substrate in the transfer route from the thermostatic device to the stage is measured by the temperature measuring device and recorded in the recording device.

Abstract: A method of transferring a sample to and from a treating chamber kept in a vacuum atmosphere through a pressure regulatively preparatory chamber. The sample is contained in the sample transfer container, which is kept air-permeable by a dust filtering filter, in a cleaned atmosphere before the sample is transferred to the treating chamber. The sample transfer container is transferred into the preparatory chamber, and the inside of the preparatory chamber is evacuated to a vacuum atmosphere. The sample is then extracted from the sample transfer container in the vacuum atmosphere and is transferred into the treating chamber. Also disclosed is an apparatus for supporting the sample transferring method.

Abstract: A pattern forming apparatus comprising a sample base for positioning a sample on the base and moving a drawing position of the sample, a position measuring unit for measuring a position of the sample base, a correcting unit for mutually independently correcting drawing positions at those respective areas into which a whole drawing section of the sample is divided, the drawing position being calculated by the position measuring unit at the respective area, and a drawing unit for drawing a pattern on the sample on the basis of the position of the sample base measured by the position measuring unit and drawing position of the respective area corrected by the correcting unit.