Patents by Inventor Shutian QIU

Shutian QIU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230343900
    Abstract: A light-emitting diode includes a semiconductor epitaxial structure and an electrode structure. The electrode structure includes an ohmic contact layered unit disposed on the semiconductor epitaxial structure, and a wire bonding layered unit disposed on the ohmic contact layered unit. The wire bonding layered unit includes at least one stress buffer portion and a pad portion disposed on the at least one stress buffer portion. The stress buffer portion includes at least two stress buffer layers and an electrode metal layer disposed therebetween. Each of the stress buffer layers has a hardness greater than that of the pad portion. A light-emitting device is also disclosed.
    Type: Application
    Filed: March 30, 2023
    Publication date: October 26, 2023
    Inventors: Yun ZHANG, Ningning ZHAN, Qiaotian WU, Shihwei LIN, Huili FAN, Shutian QIU
  • Publication number: 20210313488
    Abstract: A composite reflective structure includes at least one dielectric multilayer element which includes a first dielectric layer having a first refractive index, a second dielectric layer having a second refractive index, and a stress buffer layer interposed therebetween. The first refractive index is greater than the second refractive index. Also disclosed herein is a light-emitting diode chip including the abovementioned composite reflective structure and a light-emitting diode device including the light-emitting diode chip.
    Type: Application
    Filed: June 16, 2021
    Publication date: October 7, 2021
    Inventors: Chung-Ying Chang, Ji-Pu Wu, Hongbin Tang, Qihua Liao, Yu-Tsai Teng, Chia-Hao Chang, Shutian Qiu
  • Patent number: 11107950
    Abstract: A light emitting chip includes a first-type semiconductor layer, a light emitting layer, and a second-type semiconductor layer which are disposed in such order, a passivation layer, and a current spreading layer. The second-type semiconductor layer and the light emitting layer cooperate to form a mesa structure which partially exposes the first-type semiconductor layer. The mesa structure has a lateral surface over which the passivation layer is disposed. The current spreading layer is disposed in contact with the second-type semiconductor layer. A distance between peripheries of a contact surface of the current spreading layer and a top surface of the second-type semiconductor layer is not greater than 5 ?m. A method for producing the chip is also disclosed.
    Type: Grant
    Filed: January 20, 2020
    Date of Patent: August 31, 2021
    Assignee: Xiamen San'an Optoelectronics Co., Ltd.
    Inventors: Yu-Tsai Teng, Yan Feng, Shuo Yang, Chung-Ying Chang, Shutian Qiu
  • Publication number: 20200152834
    Abstract: A light emitting chip includes a first-type semiconductor layer, a light emitting layer, and a second-type semiconductor layer which are disposed in such order, a passivation layer, and a current spreading layer. The second-type semiconductor layer and the light emitting layer cooperate to form a mesa structure which partially exposes the first-type semiconductor layer. The mesa structure has a lateral surface over which the passivation layer is disposed. The current spreading layer is disposed in contact with the second-type semiconductor layer. A distance between peripheries of a contact surface of the current spreading layer and a top surface of the second-type semiconductor layer is not greater than 5 ?m. A method for producing the chip is also disclosed.
    Type: Application
    Filed: January 20, 2020
    Publication date: May 14, 2020
    Inventors: Yu-Tsai TENG, Yan FENG, Shuo YANG, Chung-Ying CHANG, Shutian QIU