Patents by Inventor Shu-Ting Chou

Shu-Ting Chou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Vertical organic transistor and method of fabricating the same
    Patent number: 7560728
    Abstract: A vertical organic transistor is disclosed, which includes at least: a collector contact layer disposed on a substrate; a first organic semiconductor layer disposed on the collector contact layer; a base contact layer disposed on the first organic semiconductor layer, wherein the base contact layer comprises no less than two layers of hetero-metal layers or hetero-conductive organic layers; a second organic semiconductor layer disposed on the base contact layer; and an emitter contact layer disposed on the second organic semiconductor layer. Device properties such as output current and Ion/Ioff rate can be improved by using the vertical organic transistor of this invention.
    Type: Grant
    Filed: April 25, 2006
    Date of Patent: July 14, 2009
    Assignee: Industrial Technology Research Institute
    Inventors: Shih-Yen Lin, Tzu-Min Ou, Chuan-Yi Yang, Shu-Ting Chou, Chun-Yuan Huang, I-Min Chan, Shiau-Shin Cheng, Yi-Jen Chan
  • VERTICAL ORGANIC TRANSISTOR AND METHOD OF FABRICATING THE SAME
    Publication number: 20070176166
    Abstract: A vertical organic transistor is disclosed, which includes at least: a collector contact layer disposed on a substrate; a first organic semiconductor layer disposed on the collector contact layer; a base contact layer disposed on the first organic semiconductor layer, wherein the base contact layer comprises no less than two layers of hetero-metal layers or hetero-conductive organic layers; a second organic semiconductor layer disposed on the base contact layer; and an emitter contact layer disposed on the second organic semiconductor layer. Device properties such as output current and Ion/Ioff rate can be improved by using the vertical organic transistor of this invention.
    Type: Application
    Filed: April 25, 2006
    Publication date: August 2, 2007
    Inventors: Shih-Yen Lin, Tzu-Min Ou, Chuan-Yi Yang, Shu-Ting Chou, Chun-Yuan Huang, I-Min Chan, Shiau-Shin Cheng, Yi-Jen Chan
  • Quantum-dot infrared photodetector
    Publication number: 20060138396
    Abstract: A quantum-dot infrared photodetector comprises a semiconductor substrate; a buffer layer formed on the semiconductor substrate; an undoped first obstructing layer formed on the buffer layer; a first quantum-dot layer formed on the first barrier layer; a heavily doped first contact layer formed on the first quantum-dot layer; a second quantum-dot layer formed on the first contact layer; an undoped second obstructing layer formed on the second quantum-dot layer; and a doped second contact layer formed on the second quantum-dot layer. In another embodiment, the first obstructing layer and the second obstructing layer may be formed optionally. The quantum-dot photodetector may increase photo current and constrict dark current such that detectability is improved and the operation temperature can be increased.
    Type: Application
    Filed: August 11, 2005
    Publication date: June 29, 2006
    Inventors: Shih-Yen Lin, Jim-Yung Chi, Shu-Ting Chou, Cheng-Xuan Tsai