Abstract: A surface acoustic wave resonator unit using surface acoustic wave, in which a surface acoustic wave resonator formed by disposing an IDT and reflectors on a piezoelectric member thereof is mounted by a cantilever method so that a surface acoustic wave resonator unit exhibiting very stable resonance frequency, a low resonance resistance and a large Q-value is realized. By accommodating the surface acoustic wave resonator in a housing in a vacuum state, the Q-value can be enlarged. By anodic-oxidizing the electrodes forming the IDT, a thick oxide film can be formed, the oxide film enabling the electrodes to be protected from problems, such as short circuit taking due to foreign matters, such as dust, with the characteristics maintained. If the high performance surface acoustic wave resonator unit is molded together with a lead frame by resin, a surface acoustic wave device, that can be mounted on the surface, and that exhibits excellent reliability and high quality, can be provided.