Patents by Inventor Shuuichi Tominga

Shuuichi Tominga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Trench gate type insulated gate bipolar transistor
    Patent number: 5508534
    Abstract: A semiconductor device including a layer formed without being affected by a stepped ground pattern and a method of fabricating the semiconductor device are disclosed. Cap portions (30) (insulating layers) formed over trenches (13) and covering doped polysilicon (5) have an inclined surface (26) which satisfies Y/X .ltoreq.5 where X is the length of the inclined surface (26) in a direction of the surface of a body (50) and Y is the height of the inclined surface (26) from the surface of the body (50). Formation of the insulating layers having the smooth inclined surface satisfying Y/X.ltoreq.5 permits a first main electrode to be formed non-defectively without being affected by the ground pattern including the insulating layers.
    Type: Grant
    Filed: February 7, 1995
    Date of Patent: April 16, 1996
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Katsumi Nakamura, Tadaharu Minato, Shuuichi Tominga, Katsuomi Shiozawa